scholarly journals Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

2019 ◽  
Vol 37 (3) ◽  
pp. 496-502 ◽  
Author(s):  
A. Sadoun ◽  
S. Mansouri ◽  
M. Chellali ◽  
N. Lakhdar ◽  
A. Hima ◽  
...  
Keyword(s):  
Experimental Data ◽  
Barrier Height ◽  
Theoretical Study ◽  
Series Resistance ◽  
Electrical Parameters ◽  
Current Voltage ◽  
Temperature Ranges ◽  
Current Voltage Characteristics ◽  
Schottky Structure ◽  
Good Agreement

AbstractIn this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified ( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} ) relation has been extracted from (I-V) characteristics, where the values of ΦB0 and {\rm{A}}_{{\rm{Simul}}}^* have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

scholarly journals Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

2020 ◽  
Vol 5 (1) ◽  
pp. 30
Author(s):  
Ali Sadoun
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Theoretical Study ◽  
Series Resistance ◽  
Electrical Parameters ◽  
Temperature Range ◽  
Current Voltage

In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K)  are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas-Silvaco-Tcad logical.

scholarly journals Hafnium dioxide effect on the electrical properties of M/n-GaN structure

2020 ◽  
Vol 38 (1) ◽  
pp. 165-173
Author(s):  
Sadoun Ali ◽  
Mansouri Sedik ◽  
Chellali Mohammed ◽  
Lakhdar Nacereddine ◽  
Hima Abdelkader ◽  
...  
Keyword(s):  
Barrier Height ◽  
Series Resistance ◽  
Hafnium Dioxide ◽  
Electrical Parameters ◽  
Semiconductor Interface ◽  
Metal Insulator ◽  
Current Voltage ◽  
Equation Versus ◽  
Diode Current ◽  
Numerical Simulator

AbstractIn the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO2/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φb), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO2/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson (\left( {\ln \left( {{{{{\rm{I}}_0}} \over {{{\rm{T}}^{\rm{2}}}}}} \right) - \left( {{{{{\rm{q}}^2}\sigma _{{\rm{s}}0}^2} \over {2{\rm{k}}{{\rm{T}}^2}}}} \right) = \ln \left( {{\rm{AA*}}} \right) - {{{\rm{q}}{\emptyset _{{\rm{B}}0}}} \over {{\rm{kT}}}}} \right) equation versus ({1 \over {{\rm{kT}}}}) have been extracted using the mentioned methods. The following values: {\rm{A}}_{{\rm{Simul}}}^* = 22.65\,{\rm{A/c}}{{\rm{m}}^{\rm{2}}} \cdot {{\rm{K}}^2}, 14.29 A/cm2 K2, 25.53 A/cm2 K2 and 21.75 A/cm2 K2 were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.

FIELD AND THERMIONIC FIELD TRANSPORT IN ALUMINIUM GALLIUM ARSENIDE HETEROJUNCTION BARRIERS

2007 ◽  
Vol 17 (01) ◽  
pp. 39-42
Author(s):  
D. V. MORGAN ◽  
A. PORCH
Keyword(s):  
Experimental Data ◽  
Functional Dependence ◽  
Aluminium Gallium Arsenide ◽  
Simplified Model ◽  
Semiconductor Interfaces ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Compositional Grading ◽  
Theory And Experiment ◽  
Good Agreement

A simplified model of electron transport by tunneling within a GaAs/AlGaAs/GaAs heterojunction is developed. The model is applied specifically to tunneling through a triangular barrier formed by the compositional grading of the AlGaAs region, but can in principle be extended to a range of barrier geometries encountered at heterojunction or metal/semiconductor interfaces. The experimental data for the current-voltage characteristics obtained for a range of temperatures from 77 K to 273 K are used to test the functional dependence obtained from calculations. Good agreement has been obtained between theory and experiment, thus confirming the usefulness of the simple model for device evaluation.

Diode Parameters of Mesa Structural n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography

2015 ◽  
Vol 1103 ◽  
pp. 91-96
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Motoki Takahara ◽  
Ryūhei Iwasaki ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Low Temperatures ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Lift Off ◽  
P Type ◽  
Photolithography Process

Mesa structural n-type nanocrystalline-FeSi2/p-type Si heterojunctions were successfully fabricated by a lift-off technique combined with a photolithography process. Their current-voltage characteristics were measured at low temperatures range from 300 K down to 60 K. We estimated their diode parameters such as ideality factor, barrier height and series resistance based on the thermionic emission theory and Cheung’s method. From the estimation by the thermionic emission theory, the obtained results show an increase of ideality factor and a decrease of barrier height at low temperatures. The estimation by Cheung’s method shows that the values of ideality factor and barrier height are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)-J and H(J)-J plots, which are approximately equal to each others, are increased at low temperatures.

THE ELECTRICAL CHARACTERIZATION OF Ag/N-BuHHPDI/p-Si HETEROJUNCTION BY CURRENT–VOLTAGE CHARACTERISTICS

2013 ◽  
Vol 27 (11) ◽  
pp. 1350080 ◽  
Author(s):  
MUHAMMAD TAHIR ◽  
MUHAMMAD HASSAN SAYYAD ◽  
FAZAL WAHAB ◽  
DIL NAWAZ KHAN
Keyword(s):  
Series Resistance ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Heterojunction Diode ◽  
Shunt Resistance ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Good Agreement

This paper reports the fabrication of Ag / N - BuHHPDI /p- Si heterojunction diode by evaporating a layer of organic compound N-Butyl-N'-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylicacid-diimide (N-BuHHPDI) on top of the p- Si . The electronic properties of the heterojunction have been studied, in dark at a temperature of 300 K, by conventional current–voltage (I–V) method, Norde's method and Cheung's technique. By analyzing conventional I–V characteristics, the device exhibited rectifying behavior with a rectification ratio of 62.67 at ± 5.8 V. From the forward biased I–V measurements, the barrier height and ideality factor values of 0.83 eV and 6.4, respectively, have been obtained. Different diode parameters such as series resistance, shunt resistance, reverse saturation current and turn on voltage have been extracted from the I–V measurements. The parameters calculated from Norde's and Cheung's methods are found to be in good agreement with those calculated from conventional I–V measurements. Morphology of the N-BuHHPDI film is investigated using atomic force microscope (AFM).

Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition

2013 ◽  
Vol 858 ◽  
pp. 171-176
Author(s):  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Suguru Funasaki ◽  
Kyohei Yamashita ◽  
Chen Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Carrier Transport ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Zero Bias ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheungs method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

Explanation of the Influence of Inflow Air Content on the Lift of Cavitating Hydrofoils

2018 ◽  
Vol 140 (8) ◽  
Author(s):  
Eduard Amromin
Keyword(s):  
Experimental Data ◽  
Theoretical Study ◽  
Lift Coefficient ◽  
Cavity Surface ◽  
Air Bubbles ◽  
Incoming Flow ◽  
Fluid Density ◽  
Air Content ◽  
Theoretical Results ◽  
Good Agreement

According to several known experiments, an increase of the incoming flow air content can increase the hydrofoil lift coefficient. The presented theoretical study shows that such increase is associated with the decrease of the fluid density at the cavity surface. This decrease is caused by entrainment of air bubbles to the cavity from the surrounding flow. The theoretical results based on such explanation are in a good agreement with the earlier published experimental data for NACA0015.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics
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