Analysis of noise properties of an optocoupler device

2007 ◽  
Vol 15 (3) ◽  
Author(s):  
A. Konczakowska ◽  
J. Cichosz ◽  
A. Szewczyk ◽  
B. Stawarz
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
Rts Noise

AbstractIn the paper, localization of a source of random telegraph signal noise (RTS noise) in optocoupler devices of CNY 17 type was defined. The equivalent noise circuit in low frequency noise for these types of optocouplers was proposed.

ON THE ORIGIN OF 1/F NOISE IN MOSFETS

2007 ◽  
Vol 07 (03) ◽  
pp. L321-L339 ◽  
Author(s):  
L. K. J. VANDAMME
Keyword(s):  
Empirical Relation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Time Constants ◽  
Strong Inversion ◽  
Typical Shape ◽  
Rts Noise ◽  
Lorentzian Spectrum ◽  
Mobility Fluctuations

Often the 1/f noise in MOSFETs is stated to be an ensemble of many RTS with different time constants. The majority of literature on 1/f noise is overlooking the contribution due to mobility fluctuations that are uncorrelated with number fluctuations. Here, we demonstrate that the so-called proofs for Δ N can also be obtained from the empirical relation. The following misunderstandings and controversial topics on the surface and bulk contributions to the low-frequency noise will be addressed: 1) 1/f and RTS noise can have different physical origins. An analysis in time domain shows that the low-frequency noise with RTS is nothing else than a superposition of a two level noise with a Lorentzian spectrum and a Gaussian noise with a pure 1/f spectrum and different bias dependency. 2) It is very unlikely that in a spectrum consisting of one strong two level RTS and a pure 1/f noise, the 1/f noise is a superposition of many RTS with different time constants. 3) The spreading in WLS I /I2 below a critical WL is not a proof for the Δ N origin. 4) The typical shape in the double log plot from sub threshold to strong inversion of S I/ I 2 versus I , is also not a proof for the Δ N origin.

Study of Gate Oxide/Channel Interface Properties of SON MOSFETs by Random Telegraph Signal and Low Frequency Noise

2011 ◽  
Vol 10 (3) ◽  
pp. 402-408 ◽  
Author(s):  
M'hamed Trabelsi ◽  
Liviu Militaru ◽  
Nabil Sghaier ◽  
Andrea Savio ◽  
Stephane Monfray ◽  
...  
Keyword(s):  
Low Frequency ◽  
Gate Oxide ◽  
Frequency Noise ◽  
Interface Properties ◽  
Low Frequency Noise ◽  
Random Telegraph Signal

Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG

2007 ◽  
Author(s):  
K. Abe ◽  
S. Sugawa ◽  
S. Watabe ◽  
N. Miyamoto ◽  
A. Teramoto ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Rts Noise

GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS

2005 ◽  
Vol 05 (04) ◽  
pp. L539-L548 ◽  
Author(s):  
MASATO TOITA ◽  
LODE K. J. VANDAMME ◽  
SHIGETOSHI SUGAWA ◽  
AKINOBU TERAMOTO ◽  
TADAHIRO OHMI
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Gate Bias ◽  
Low Frequency Noise ◽  
Noise Levels ◽  
Temperature Plasma ◽  
Random Telegraph Signal ◽  
Carrier Traps ◽  
Inherent Nature ◽  
Bias Condition

Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO 2/ Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.

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