Investigations of dynamic photorefractivity regime by optical polarizing microscopy

2009 ◽  
Vol 17 (2) ◽  
Author(s):  
A. Agashkov ◽  
A. Kovalev ◽  
J. Parka
Keyword(s):  
Electric Field ◽  
Domain Structure ◽  
Light Source ◽  
Field Effect ◽  
Interference Field ◽  
Optical Interference ◽  
Polarizing Microscopy ◽  
Low Intensity ◽  
Ac Electric Field ◽  
Optical Polarizing Microscopy

AbstractWe present a technique, based on optical polarizing microscopy, and results of direct observation of the optical interference field effect on the transient domains excited by ac electric field in a nematic planar cell with photosensitive aligning layers. The light source used in a microscope operated in DC mode as well as in triggered pulse one. Obtained microscopic snapshots of transient domain structure confirmed our assumption of the transient domains reordering (trapping) by the low intensity optical interference field.

AC Dielectrophoresis Alignment of ZnO Nanowires and Subsequent Use in Field-Effect Transistors

2008 ◽  
Vol 8 (7) ◽  
pp. 3473-3477 ◽  
Author(s):  
Sang-Kwon Lee ◽  
Seung-Yong Lee ◽  
Jung-Hwan Hyung ◽  
Chan-Oh Jang ◽  
Dong-Joo Kim ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Zno Nanowires ◽  
Excellent Performance ◽  
Metal Electrodes ◽  
Yield Rate ◽  
Ac Electric Field

We report on the dielectrophoresis (DEP) characterization of single crystalline zinc oxide (ZnO) nanowires with variations of the AC electric field and frequency. The alignment yield rate of ZnO nanowires in the gap over the 200 metal electrodes increased with increasing AC electric field and also changed by the applying frequency. Moreover, we demonstrated that the DEP prepared multi-ZnO nanowires field-effect transistors (FETs) exhibited excellent performance with a transconductance of ∼3 μS and a high drain current of ∼2.7 × 10−6 A (VDS = 5 V, VG = 20 V).

A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)

2007 ◽  
Vol 556-557 ◽  
pp. 1023-1026
Author(s):  
Seung Yong Lee ◽  
Tae Hong Kim ◽  
Duk Il Suh ◽  
Ji Eun Park ◽  
Eun Kyung Suh ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Semiconducting Nanowires ◽  
Gan Nanowires ◽  
Yield Rate ◽  
Ac Electric Field ◽  
Effect Transistor

We report on investigation of the AC dielectrophoresis aligned assembly deposition (DAAD) of gallium nitride nanowires (GaN NWs) with both the variation of the electric field and the frequency. Our DAAD methods were used to align and manipulate GaN nanowires as well as to extract the electrical properties of semiconducting nanowires. We observed that the ability of the alignment strongly depends on the magnitude of the AC electric field and frequencies. For the higher AC peak-to-peak electric fields (up to 20 Vp-p), the GaN nanowires have a better alignment across the patterned Ti / Au electrodes with a high yield rate of ~ 90% over the entire arrays (in our case, 20 arrays) in the chip at the 20 kHz. From the transport measurements of our AC aligned GaN nanowires using conventional three-probe schemes in field-effect transistor structures, we found that the conductance of the GaN NWs increased for gating voltage greater than zero and decreased for gating voltage less than zero, indicating these GaN nanowires have n-type dopants.

Observation of Carrier Behavior in Organic Field-Effect Transistors with Electroluminescence under AC Electric Field

2008 ◽  
Vol 47 (4) ◽  
pp. 3200-3203 ◽  
Author(s):  
Yuki Ohshima ◽  
Hideki Kohn ◽  
Eunju Lim ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Ac Electric Field

Transformation of initial domain structure by ac electric field in lithium tantalate crystals with composition gradient

2021 ◽  
Vol 574 (1) ◽  
pp. 136-143
Author(s):  
E. D. Greshnyakov ◽  
V. I. Pryakhina ◽  
B. I. Lisjikh ◽  
M. S. Nebogatikov ◽  
V. Ya. Shur
Keyword(s):  
Electric Field ◽  
Domain Structure ◽  
Lithium Tantalate ◽  
Composition Gradient ◽  
Ac Electric Field ◽  
Initial Domain

Formation of Regular Domain Structures in Quenched Ferroelectrics Under the Influence of an External High-frequency Electric Field

2019 ◽  
Vol 9 (3) ◽  
pp. 344-352 ◽  
Author(s):  
L.I. Stefanovich ◽  
O.Y. Mazur ◽  
V.V. Sobolev
Keyword(s):  
Lithium Niobate ◽  
Electric Field ◽  
Domain Structure ◽  
High Frequency ◽  
Evolution Equations ◽  
Regular Domain ◽  
Field Frequency ◽  
Domain Structures ◽  
Alternating Electric Field ◽  
Lithium Niobate Crystals

Introduction: Within the framework of the phenomenological theory of phase transitions of the second kind of Ginzburg-Landau, the kinetics of ordering of a rapidly quenched highly nonequilibrium domain structure is considered using the lithium tantalate and lithium niobate crystals as an example. Experimental: Using the statistical approach, evolution equations describing the formation of the domain structure under the influence of a high-frequency alternating electric field in the form of a standing wave were obtained. Numerical analysis has shown the possibility of forming thermodynamically stable mono- and polydomain structures. It turned out that the process of relaxation of the system to the state of thermodynamic equilibrium can proceed directly or with the formation of intermediate quasi-stationary polydomain asymmetric phases. Results: It is shown that the formation of Regular Domain Structures (RDS) is of a threshold character and occurs under the influence of an alternating electric field with an amplitude less than the critical value, whose value depends on the field frequency. The conditions for the formation of RDSs with a micrometer spatial scale were determined. Conclusion: As shown by numerical studies, the RDSs obtained retain their stability, i.e. do not disappear even after turning off the external electric field. Qualitative analysis using lithium niobate crystals as an example has shown the possibility of RDSs formation in high-frequency fields with small amplitude under resonance conditions

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