Preparation and characterization of V2O5 doped SiO2-TiO2 thin films
AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.
2011 ◽
Vol 206
(2-3)
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pp. 243-249
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2016 ◽
Vol 36
(3)
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pp. 309-320
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