Peculiar Features of Longitudinal Magnetoresistance and Shubnikov de Haas Oscillations in the Bi1 – xSbx Semiconductor Wires

2021 ◽  
Vol 57 (5) ◽  
pp. 572-578
Author(s):  
A. A. Nikolaeva ◽  
L. A. Konopko ◽  
T. E. Huber ◽  
I. A. Popov ◽  
G. I. Para ◽  
...  
Keyword(s):  
Shubnikov De Haas Oscillations ◽  
Longitudinal Magnetoresistance

Shubnikov–de Haas oscillations in organic metals

1992 ◽  
Vol 162 (10) ◽  
pp. 183 ◽  
Author(s):  
M.V. Kartsovnik ◽  
V.N. Laukhin ◽  
S.I. Pesotskii
Keyword(s):  
Organic Metals ◽  
Shubnikov De Haas Oscillations

Shubnikov–de Haas oscillations in an individual single-crystalline bismuth nanowire grown by on-film formation of nanowires

2009 ◽  
Vol 95 (23) ◽  
pp. 232107 ◽  
Author(s):  
Wooyoung Shim ◽  
Jinhee Ham ◽  
Jungmin Kim ◽  
Wooyoung Lee
Keyword(s):  
Film Formation ◽  
Single Crystalline ◽  
Bismuth Nanowire ◽  
Shubnikov De Haas Oscillations

Novel Electronics Enabled by Rare Earth Arsenides Buried in III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
S. James Allen ◽  
Dan Brehmer ◽  
C.J. PalmstrØm
Keyword(s):  
Rare Earth ◽  
Epitaxial Layers ◽  
Hot Electron ◽  
Surface Geometry ◽  
Electron Effective Mass ◽  
Metal Base ◽  
Lattice Match ◽  
Linear Material ◽  
Shubnikov De Haas Oscillations ◽  
Electron Transistors

ABSTRACTHeterostructures consisting of III-V semiconductors and epitaxial layers of the rare earth monoarsenides can be grown by molecular beam epitaxy. By alloying ErAs with ScAs, lattice match can be achieved with (Al,Ga)As. Using magneto-transport measurements, we show that these layers are semi-metallic with equal electron and hole concentrations, 3.0 ×1020 cm−3. Shubnikov-de Haas oscillations are used to confirm the predicted Fermi surface geometry and measure the electron effective mass and the coupling to the 4f spin on the Er3+ ion. Remarkably, the material shows no transition from semimetal to semiconductor as the film thickness is reduced to three monolayers. Below three monolayers the films are not uniform and are believed to consist of islands three monolayers high.This system provides a unique opportunity to explore novel electronics based on controlled transport through semimetal/semiconductor heterostructures. Lateral transport through semimetal islands immersed in a δ-doped layer may provide a fast non-linear material for THz electronics. Vertical transport through thin epitaxial layers may enable resonant tunneling hot electron transistors with a semi-metal base. Preliminary experiments on transistor like test structures measure some transfer through a 10 monolayer thick semimetal base. They also identify overgrowth of the III-V semiconductor on the semimetal layer as the key materials issue.

Direct Observation of Spin-Splitting of the Shubnikov- de Haas Oscillations in a Quasi-Two-Dimensional Organic Conductor (BEDT-TTF)2KHg(SCN)4

1990 ◽  
Vol 59 (7) ◽  
pp. 2324-2327 ◽  
Author(s):  
Madoka Tokumoto ◽  
A. G. Swanson ◽  
J. S. Brooks ◽  
C. C. Agosta ◽  
S. T. Hannahs ◽  
...  
Keyword(s):  
Direct Observation ◽  
Spin Splitting ◽  
Two Dimensional ◽  
Organic Conductor ◽  
Shubnikov De Haas Oscillations
Sign in / Sign up

Export Citation Format

Share Document