Quantum hall effects in two-dimensional electron systems: a global approach

Up to almost the last two decades all the experimental results concerning the quantum Hall effect (QHE), i.e. the observation of plateaux at integer or fractional (FQHE) values of the constant h/e2, were related to quantum-wells in semiconductor heterostructures. However, more recently, a renewed interest in revisiting these phenomena has arisen thanks to the observation of entirely similar effects in graphene and topological insulators. In this paper we show an approach encompassing all these QHEs using the same theoretical frame, entailing both Hall effect plateaux and Shubnikov-de Haas oscillations. Moreover, the model also enables the analysis of both phenomena as a function not only of the magnetic field but the gate voltage as well. More specifically, in the light of the approach, the FQHE in any two-dimensional electron system appears to be an effect of the breaking of the degeneration of every Landau level, n, as a result of the electrostatic interaction involved, and being characterized by the set of three integer numbers (n, p, q), where p and q have clear physical meanings too.

Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES

We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaA$s_{2}$ cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-doping of the samples. This shifts the Fermi level closer to the Dirac point, allowing investigating the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.