Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

2010 ◽  
Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li
Keyword(s):  
Failure Analysis ◽  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Detection Sensitivity ◽  
Chemical Contamination ◽  
Inductively Coupled ◽  
Minimal Sample ◽  
Icp Ms

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

scholarly journals High Throughput Sample Preparation and Analysis Using an Inductively Coupled Plasma (ICP) Focused Ion Beam Source

2010 ◽  
Vol 16 (S2) ◽  
pp. 222-223 ◽  
Author(s):  
S Kellogg ◽  
R Schampers ◽  
S Zhang ◽  
A Graupera ◽  
T Miller ◽  
...  
Keyword(s):  
Sample Preparation ◽  
High Throughput ◽  
Inductively Coupled Plasma ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Source ◽  
Inductively Coupled

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

High Current Focused Ion Beam Instrument for Destructive Physical Analysis Applications

2008 ◽  
Author(s):  
Paul Tesch ◽  
Noel Smith ◽  
Noel Martin ◽  
Doug Kinion
Keyword(s):  
Cross Sections ◽  
Inductively Coupled Plasma ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Physical Analysis ◽  
Inductively Coupled ◽  
3D Metrology ◽  
Plasma Ion Source

Abstract Conventional focused ion beams (FIB) employing liquid metal ion sources (LMIS) are used to create site specific cross-sections for viewing subsurface features and performing 3D metrology on subsurface structure. Emerging applications incorporate novel materials as well as large structures that interface to decreasing IC dimensions and often require destructive physical analysis. This paper describes a novel instrument in which an inductively coupled plasma ion source is integrated onto a conventional FIB column. It compares this instrument to the existing LMIS FIBs and shows examples that illustrate the capabilities of this tool. This instrument retains the benefits of the conventional LMIS FIB such as high placement accuracy and the ability to immediately obtain high resolution images of the cross-section face without having to transfer it to another tool. It is capable of creating large cross-sections from 10 microns to 1mm in size at about 100 times faster than a conventional FIB.

Optimization of ion energy spread in inductively coupled plasma source designed for focused ion beam applications

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 344-348 ◽  
Author(s):  
P.Y. Nabhiraj ◽  
Ranjini Menon ◽  
G. Mohan Rao ◽  
S. Mohan ◽  
R.K. Bhandari
Keyword(s):  
Inductively Coupled Plasma ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Plasma Source ◽  
Energy Spread ◽  
Ion Energy ◽  
Inductively Coupled

Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling

2016 ◽  
Vol 22 (3) ◽  
pp. 576-582 ◽  
Author(s):  
Robert Estivill ◽  
Guillaume Audoit ◽  
Jean-Paul Barnes ◽  
Adeline Grenier ◽  
Didier Blavette
Keyword(s):  
Inductively Coupled Plasma ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Atom Probe ◽  
Milling Process ◽  
Ion Distribution ◽  
Distribution Maps ◽  
Inductively Coupled ◽  
Dimensional Reconstruction

AbstractThe damage and ion distribution induced in Si by an inductively coupled plasma Xe focused ion beam was investigated by atom probe tomography. By using predefined patterns it was possible to prepare the atom probe tips with a sub 50 nm end radius in the ion beam microscope. The atom probe reconstruction shows good agreement with simulated implantation profiles and interplanar distances extracted from spatial distribution maps. The elemental profiles of O and C indicate co-implantation during the milling process. The presence of small disc-shaped Xe clusters are also found in the three-dimensional reconstruction. These are attributed to the presence of Xe nanocrystals or bubbles that open during the evaporation process. The expected accumulated dose points to a loss of >95% of the Xe during analysis, which escapes undetected.

Single Particle Inductively Coupled Plasma Mass Spectrometry: Investigating Nonlinear Response Observed in Pulse Counting Mode and Extending the Linear Dynamic Range by Compensating for Dead Time Related Count Losses on a Microsecond Timescale

2019 ◽  
Author(s):  
Ingo Strenge ◽  
Carsten Engelhard
Keyword(s):  
Mass Spectrometry ◽  
Inductively Coupled Plasma ◽  
Nonlinear Response ◽  
Dynamic Range ◽  
Dead Time ◽  
Inorganic Nanoparticles ◽  
Linear Dynamic Range ◽  
Inductively Coupled ◽  
Icp Ms ◽  
Plasma Mass Spectrometry

<p>The article demonstrates the importance of using a suitable approach to compensate for dead time relate count losses (a certain measurement artefact) whenever short, but potentially strong transient signals are to be analysed using inductively coupled plasma mass spectrometry (ICP-MS). Findings strongly support the theory that inadequate time resolution, and therefore insufficient compensation for these count losses, is one of the main reasons for size underestimation observed when analysing inorganic nanoparticles using ICP-MS, a topic still controversially discussed.</p>

Sign in / Sign up

Export Citation Format

Share Document