From the Store Shelf to Device-Level Atom Probe Analysis: An Exercise in Feasibility

Abstract There are many opportunities in semiconductor processing where atom probe tomography (APT) analysis of a finished product is desirable; competitive analysis and failure analysis are two good examples, and only recently have APT results been obtained from fully processed "off-the-shelf" transistor structures that are part of a finished product. This paper explores the feasibility of APT analysis for fully packaged integrated-circuit microelectronic devices by detailing the various options available in specimen preparation and the resulting analyses. The goal of this work is to take an off-the-shelf microelectronics product and perform APT analysis on various device-level components. This work demonstrates that a wealth of high quality information may be obtained from site-specific APT analysis of post-production microelectronic devices. The yield of useful results from such analyses has not yet been determined, but the small number of specimens analyses (four) yielded quality results in the first attempt.

Download Full-text

Site-specific specimen preparation for atom probe tomography of grain boundaries

Physica B Condensed Matter ◽

10.1016/j.physb.2006.12.024 ◽

2007 ◽

Vol 394 (2) ◽

pp. 267-269 ◽

Cited By ~ 29

Author(s):

J.M. Cairney ◽

D.W. Saxey ◽

D. McGrouther ◽

S.P. Ringer

Keyword(s):

Grain Boundaries ◽

Atom Probe Tomography ◽

Atom Probe ◽

Specimen Preparation ◽

Site Specific

Download Full-text

In situ site-specific specimen preparation for atom probe tomography

Ultramicroscopy ◽

10.1016/j.ultramic.2006.06.008 ◽

2007 ◽

Vol 107 (2-3) ◽

pp. 131-139 ◽

Cited By ~ 974

Author(s):

K. Thompson ◽

D. Lawrence ◽

D.J. Larson ◽

J.D. Olson ◽

T.F. Kelly ◽

...

Keyword(s):

Atom Probe Tomography ◽

Atom Probe ◽

Specimen Preparation ◽

Site Specific

Download Full-text

Challenges Associated with the Characterisation of Nanocrystalline Materials Using Atom Probe Tomography

Materials Science Forum ◽

10.4028/www.scientific.net/msf.654-656.2366 ◽

2010 ◽

Vol 654-656 ◽

pp. 2366-2369 ◽

Cited By ~ 4

Author(s):

Feng Zai Tang ◽

Talukder Alam ◽

Michael P. Moody ◽

Baptiste Gault ◽

Julie M. Cairney

Keyword(s):

Quantitative Analysis ◽

Atom Probe Tomography ◽

Nanocrystalline Materials ◽

Atom Probe ◽

Atomic Scale ◽

Three Dimensions ◽

Specimen Preparation ◽

Compositional Information

Atom probe tomography provides compositional information in three dimensions at the atomic scale, and is therefore extremely suited to the study of nanocrystalline materials. In this paper we present atom probe results from the investigation of nanocomposite TiSi¬Nx coatings and nanocrystalline Al. We address some of the major challenges associated with the study of nanocrystalline materials, including specimen preparation, visualisation, common artefacts in the data and approaches to quantitative analysis. We also discuss the potential for the technique to relate crystallographic information to the compositional maps.

Download Full-text

Automated Sample Depth Targeting with Low kV Cleaning by Focused Ion Beam Microscopy for Atom Probe Tomography

ISTFA 2020: Papers Accepted for the Planned 46th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2020p0299 ◽

2020 ◽

Author(s):

Woo Jun Kwon ◽

Jisu Ryu ◽

Christopher H. Kang ◽

Michael B. Schmidt ◽

Nicholas Croy

Keyword(s):

Sample Preparation ◽

Atom Probe Tomography ◽

Focused Ion Beam ◽

Ion Beam ◽

Region Of Interest ◽

Atom Probe ◽

Sample Volume ◽

Cleaning Process ◽

Site Specific ◽

Sample Depth

Abstract Focused ion beam (FIB) microscopy is an essential technique for the site-specific sample preparation of atom probe tomography (APT). The site specific APT and automated APT sample preparation by FIB have allowed increased APT sample volume. In the workflow of APT sampling, it is very critical to control depth of the sample where exact region of interest (ROI) for accurate APT analysis. Very precise depth control is required at low kV cleaning process in order to remove the damaged layer by previous high kV FIB process steps. We found low kV cleaning process with 5 kV and followed by 2kV beam conditions delivers better control to reached exact ROI on Z direction. This understanding is key to make APT sample with fully automated fashion.

Download Full-text

Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials

Microscopy and Microanalysis ◽

10.1017/s1431927615000422 ◽

2015 ◽

Vol 21 (3) ◽

pp. 544-556 ◽

Cited By ~ 19

Author(s):

Fengzai Tang ◽

Michael P. Moody ◽

Tomas L. Martin ◽

Paul A.J. Bagot ◽

Menno J. Kappers ◽

...

Keyword(s):

Atom Probe Tomography ◽

Focused Ion Beam ◽

Laser Energy ◽

Ion Beam ◽

Atom Probe ◽

Specimen Preparation ◽

Chemical Compositions ◽

Pole Structure ◽

Gan Heterostructure ◽

Ga Content

AbstractVarious practical issues affecting atom probe tomography (APT) analysis of III-nitride semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN heterostructure. Specimen preparation was undertaken using a focused ion beam microscope with a mono-isotopic Ga source. This enabled the unambiguous observation of implantation damage induced by sample preparation. In the reconstructed InAlN layer Ga implantation was demonstrated for the standard “clean-up” voltage (5 kV), but this was significantly reduced by using a lower voltage (e.g., 1 kV). The characteristics of APT data from the desorption maps to the mass spectra and measured chemical compositions were examined within the GaN buffer layer underlying the InAlN layer in both pulsed laser and pulsed voltage modes. The measured Ga content increased monotonically with increasing laser pulse energy and voltage pulse fraction within the examined ranges. The best results were obtained at very low laser energy, with the Ga content close to the expected stoichiometric value for GaN and the associated desorption map showing a clear crystallographic pole structure.

Download Full-text

Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation

Ultramicroscopy ◽

10.1016/j.ultramic.2018.03.001 ◽

2018 ◽

Vol 188 ◽

pp. 19-23 ◽

Cited By ~ 3

Author(s):

J. Bogdanowicz ◽

A. Kumar ◽

C. Fleischmann ◽

M. Gilbert ◽

J. Houard ◽

...

Keyword(s):

Atom Probe Tomography ◽

Focused Ion Beam ◽

Ion Beam ◽

Atom Probe ◽

Beam Specimen ◽

Specimen Preparation ◽

The Impact

Download Full-text

A method for site-specific and cryogenic specimen fabrication of liquid/solid interfaces for atom probe tomography

Ultramicroscopy ◽

10.1016/j.ultramic.2018.07.010 ◽

2018 ◽

Vol 194 ◽

pp. 89-99 ◽

Cited By ~ 24

Author(s):

D.K. Schreiber ◽

D.E. Perea ◽

J.V. Ryan ◽

J.E. Evans ◽

J.D. Vienna

Keyword(s):

Atom Probe Tomography ◽

Atom Probe ◽

Site Specific

Download Full-text

Analyzing Boron in 9–12% Chromium Steels Using Atom Probe Tomography

Microscopy and Microanalysis ◽

10.1017/s1431927618015726 ◽

2019 ◽

Vol 25 (2) ◽

pp. 462-469 ◽

Cited By ~ 1

Author(s):

Irina Fedorova ◽

Flemming Bjerg Grumsen ◽

John Hald ◽

Hans-Olof Andrén ◽

Fang Liu

Keyword(s):

Grain Boundaries ◽

Atom Probe Tomography ◽

Atom Probe ◽

Specimen Preparation ◽

Accurate Analysis ◽

Simple Method ◽

Metal Borides ◽

Boron Distribution ◽

Cr Steels ◽

Term Creep

AbstractSmall additions of boron can remarkably improve the long-term creep resistance of 9–12% Cr steels. The improvement has been attributed to boron segregation to grain boundaries during quenching, and subsequent boron incorporation into certain families of precipitates during tempering. However, the detailed mechanisms are not yet fully understood. Atom probe tomography (APT) is an excellent technique for gaining insights into boron distribution, however, in order to acquire accurate analysis of boron in 9–12% Cr steels using APT, there are several key challenges. In order to better understand and address these challenges, we developed a novel method for site-specific APT specimen preparation, which enables convenient preparation of specimens containing specifically selected grain boundaries positioned approximately perpendicular to the axis of the APT tip. Additionally, when analyzing boron at boundaries and in carbides (as diluted solute) and borides, a widening of the profile of boron distribution compared to other elements was repeatedly observed. This phenomenon is particularly analyzed and discussed in light of the evaporation field of different elements. Finally, the possible effects of detector dead-time on quantitative analysis of boron in metal borides are discussed. A simple method using 10B correction was used to obtain good quantification.

Download Full-text