Non-Destructive Open Fault Isolation in Flip-Chip Devices with Space-Domain Reflectometry

2013 ◽  
Author(s):  
W. Qiu ◽  
M.S. Wei ◽  
J. Gaudestad ◽  
V.V. Talanov
Keyword(s):  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Superconducting Quantum Interference Device ◽  
Isolation Method ◽  
Space Domain ◽  
Open Faults ◽  
Scanning Squid ◽  
Non Destructive

Abstract Space-domain reflectometry (SDR) utilizing scanning superconducting quantum interference device (SQUID) microscopy is a newly developed non-destructive failure analysis (FA) technique for open fault isolation. Unlike the conventional open fault isolation method, time-domain reflectometry (TDR), scanning SQUID SDR provides a truly two-dimensional physical image of device under test with spatial resolution down to 30 μm [1]. In this paper, the SQUID SDR technique is used to isolate dead open faults in flip-chip devices. The experimental results demonstrate the capability of SDR in open fault detection

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Localization of Dead Open in a Solder Bump by Space Domain Reflectometry

2012 ◽  
Author(s):  
David P. Vallett ◽  
Daniel A. Bader ◽  
Vladimir V. Talanov ◽  
Jan Gaudestad ◽  
Nicolas Gagliolo ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Quantum Interference ◽  
Flip Chip ◽  
Solder Bump ◽  
Frequency Range ◽  
Superconducting Quantum Interference Device ◽  
Space Domain ◽  
Non Destructive ◽  
The Magnetic Field

Abstract Space Domain Reflectometry (SDR) is a newly developed non-destructive failure analysis (FA) technique for localizing open defects in both packages and dies through mapping in space domain the magnetic field produced by a radio frequency (RF) current induced in the sample, herein the name Space Domain Reflectometry. The technique employs a scanning superconducting quantum interference device (SQUID) RF microscope operating over a frequency range from 60 to 200 MHz. In this paper we demonstrate that SDR is capable of locating defective micro bumps in a flip-chip device.

A New Methodology for Electrical Debugging Short in Packages with the Modified Daisy-Chain Die

2007 ◽  
Author(s):  
Steve K. Hsiung ◽  
Kevan V. Tan ◽  
John Soopikian
Keyword(s):  
Quantum Interference ◽  
Stress Testing ◽  
Time Domain Reflectometry ◽  
Superconducting Quantum Interference Device ◽  
Difficult Time ◽  
Reference Device ◽  
Ic Packaging ◽  
Scanning Squid ◽  
Non Destructive ◽  
The Magnetic Field

Abstract Packages with the Modified Daisy-chain (MDC) die have been used increasingly to accelerate reliability stress testing of IC packaging during package development, qualification, and evaluation and reliability monitor programs [1]. Utilizing this approach in essence eliminates chip circuit failure mechanisms. Unlike packages with active die, in packages with the MDC die, when short occurred between two daisy-chain pairs of I/Os, there are four possibilities that can attribute to each pin of the two daisy-chain pairs. That makes the isolation of short failure difficult. Time Domain Reflectometry (TDR) is a well-described technique to characterize package discontinuity (open or short failure). By using a bare package substrate and a reference device, an analyst can characterize the discontinuity and localize it: within the package, the die-package interconnects, or on the die [2]. Scanning SQUID (Superconducting Quantum Interference Device) Microscopy, known as SSM, is a non-destructive technique that detects magnetic fields generated by current. The magnetic field, when converted to current density via Fast Fourier Transform (FFT), is particularly useful to detect shorts and high resistance (HR) defects [3]. In this paper, a new methodology that combines Resistance Analysis, TDR Isolation and SSM Identification for electrical debugging short in packages with the MDC die will be presented. Case studies will also be discussed.

Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip Package

2012 ◽  
Author(s):  
Lihong Cao ◽  
Manasa Venkata ◽  
Meng Yeow Tay ◽  
Wen Qiu ◽  
J. Alton ◽  
...  
Keyword(s):  
Time Domain ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Experimental Results ◽  
Terahertz Pulse ◽  
Isolation And Identification ◽  
Isolation Technique ◽  
Non Destructive

Abstract Electro-optical terahertz pulse reflectometry (EOTPR) was introduced last year to isolate faults in advanced IC packages. The EOTPR system provides 10μm accuracy that can be used to non-destructively localize a package-level failure. In this paper, an EOTPR system is used for non-destructive fault isolation and identification for both 2D and 2.5D with TSV structure of flip-chip packages. The experimental results demonstrate higher accuracy of the EOTPR system in determining the distance to defect compared to the traditional time-domain reflectometry (TDR) systems.

Electro Optical Terahertz Pulse Reflectometry—A Fast and Highly Accurate Non-Destructive Fault Isolation Technique for 3D Flip Chip Packages

2013 ◽  
Author(s):  
Stephane Barbeau ◽  
Jesse Alton ◽  
Martin Igarashi
Keyword(s):  
Time Domain ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Terahertz Pulse ◽  
Through Silicon Via ◽  
Isolation Technique ◽  
Non Destructive ◽  
Non Destructive Techniques

Abstract Electro Optical Terahertz Pulse Reflectometry (EOTPR), a terahertz based Time Domain Reflectometry (TDR) technique, has been evaluated on Flip Chip (FC) and 3D packages. The reduced size and complexity of these new generations of advanced IC products necessitate non-destructive techniques with increased fault isolation accuracy. The minimum accuracy achievable with conventional TDR is approximately 1000μm. Here, we show that EOTPR is able to differentiate all of the critical features in a 3D FC package, such as μC4 and Through Silicon Via (TSV), and is capable of producing distance-to-defect accuracy of less than 20μm, a significant improvement over conventional microwave based TDR techniques.

Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications

2010 ◽  
Author(s):  
Sebastian Brand ◽  
Matthias Petzold ◽  
Peter Czurratis ◽  
Peter Hoffrogge
Keyword(s):  
Image Processing ◽  
Failure Analysis ◽  
Signal Analysis ◽  
Flip Chip ◽  
Fault Isolation ◽  
Acoustic Microscopy ◽  
Specific Information ◽  
Full Potential ◽  
Time Frequency ◽  
Non Destructive

Abstract In industrial manufacturing of microelectronic components, non-destructive failure analysis methods are required for either quality control or for providing a rapid fault isolation and defect localization prior to detailed investigations requiring target preparation. Scanning acoustic microscopy (SAM) is a powerful tool enabling the inspection of internal structures in optically opaque materials non-destructively. In addition, depth specific information can be employed for two- and three-dimensional internal imaging without the need of time consuming tomographic scan procedures. The resolution achievable by acoustic microscopy is depending on parameters of both the test equipment and the sample under investigation. However, if applying acoustic microscopy for pure intensity imaging most of its potential remains unused. The aim of the current work was the development of a comprehensive analysis toolbox for extending the application of SAM by employing its full potential. Thus, typical case examples representing different fields of application were considered ranging from high density interconnect flip-chip devices over wafer-bonded components to solder tape connectors of a photovoltaic (PV) solar panel. The progress achieved during this work can be split into three categories: Signal Analysis and Parametric Imaging (SA-PI), Signal Analysis and Defect Evaluation (SA-DE) and Image Processing and Resolution Enhancement (IP-RE). Data acquisition was performed using a commercially available scanning acoustic microscope equipped with several ultrasonic transducers covering the frequency range from 15 MHz to 175 MHz. The acoustic data recorded were subjected to sophisticated algorithms operating in time-, frequency- and spatial domain for performing signal- and image analysis. In all three of the presented applications acoustic microscopy combined with signal- and image processing algorithms proved to be a powerful tool for non-destructive inspection.

High-Resolution Backside GMR Magnetic Current Imaging on a Contour-Milled Globally Ultrathin Die

2014 ◽  
Author(s):  
D. Vallett ◽  
J. Gaudestad ◽  
C. Richardson
Keyword(s):  
Quantum Interference ◽  
Flip Chip ◽  
Milling Process ◽  
Dramatic Improvement ◽  
Superconducting Quantum Interference Device ◽  
Density Peak ◽  
Magnetic Current ◽  
Gmr Sensors ◽  
Silicon Thickness ◽  
A Current

Abstract Magnetic current imaging (MCI) using superconducting quantum interference device (SQUID) and giant-magnetoresistive (GMR) sensors is an effective method for localizing defects and current paths [1]. The spatial resolution (and sensitivity) of MCI is improved significantly when the sensor is as close as possible to the current paths and associated magnetic fields of interest. This is accomplished in part by nondestructive removal of any intervening passive layers (e.g. silicon) in the sample. This paper will present a die backside contour-milling process resulting in an edge-to-edge remaining silicon thickness (RST) of < 5 microns, followed by a backside GMR-based MCI measurement performed directly on the ultra-thin silicon surface. The dramatic improvement in resolving current paths in an ESD protect circuit is shown as is nanometer scale resolution of a current density peak due to a power supply shortcircuit defect at the edge of a flip-chip packaged die.

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

2001 ◽  
Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd
Keyword(s):  
Form Factor ◽  
Failure Analysis ◽  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Interfacial Region ◽  
Precise Localization ◽  
Super Conducting ◽  
Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

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