Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Investigation of Cell-Sensor Hybrid Structures by Focused Ion Beam (FIB) Technology

2006 ◽  
Vol 983 ◽  
Author(s):  
Andreas Heilmann ◽  
Frank Altmann ◽  
Andreas Cismak ◽  
Werner Baumann ◽  
Mirko Lehmann
Keyword(s):  
Cross Section ◽  
Mammalian Cells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Nerve Cells ◽  
Cross Sectional ◽  
Dimensional Reconstruction ◽  
The Cross ◽  
Silicon Interface

AbstractFor the investigation of the adhesion of mammalian cells on a semiconductor biosensor structure, nerve cells on silicon neurochips were prepared for scanning electron microscopy investigations (SEM) and cross-sectional preparation by focused ion beam technology (FIB). The cross-sectional pattern demonstrates the focal adhesion points of the nerve cells on the chip. Finally, SEM micrographs were taken parallel to the FIB ablation to investigate the cross section of the cells slice by slice in order to demonstrate the spatial distribution of focal contact positions for a possible three-dimensional reconstruction of the cell-silicon interface.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

AbstractWe report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

Generalized Algorithms for Interactive Warping Analysis of Porous Cross Sections

1999 ◽  
Author(s):  
Y. C. Pao ◽  
Erik L. Ritman
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Image Data ◽  
Ct Scanning ◽  
Iterative Solution ◽  
Coefficient Matrix ◽  
Finite Difference Approximation ◽  
Difference Approximation ◽  
Cross Sectional ◽  
The Cross

Abstract Algorithms have been developed for warping analysis and calculation of the shearing stresses in a general porous cross section of a long rod when it is subjected to twisting torques at its ends. The shape and dimensions of the cross section full of holes are defined from the binary segmented image data with by a micro-CT scanning technique. Finite difference approximation of the Laplace equation governing the cross-sectional warping leading to the matrix solution by a Gauss-Seidel process is discussed. Method of pointer matrix which keeps the locations of the nonzero elements of the coefficient matrix, is employed to expedite the iterative solution. Computer programs are coded in QuickBASIC language to facilitate plotting of the computed distributions of warping and shearing stresses. The classical torsional problem of square and thin-walled cross sections are used to reexamine the accuracy of the developed algorithms and results are found to be in very good agreement.

Nanopillar Fabrication with Focused Ion Beam Cutting

2014 ◽  
Vol 20 (5) ◽  
pp. 1581-1584 ◽  
Author(s):  
Oleksii V. Kuzmin ◽  
Yutao T. Pei ◽  
Jeff T.M. De Hosson
Keyword(s):  
Aspect Ratio ◽  
Radiation Damage ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Incident Angle ◽  
Ion Beam ◽  
Large Aspect Ratio ◽  
Milled Surface ◽  
Key Features ◽  
The Cross

AbstractA versatile method to fabricate taper-free micro-/nanopillars of large aspect ratio was developed with focused ion beam (FIB) cutting. The key features of the fabrication are a FIB with an incident angle of 90° to the long axis of the pillar that enables milling of the pillar sideways avoiding tapering and the FIB current can be reduced step by step so as to reduce possible radiation damage of the milled surface by Ga ions. A procedure to accurately determine the cross-section of each pillar was developed.

scholarly journals Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

2000 ◽  
Vol 5 (S1) ◽  
pp. 950-956
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

A Selected Area Planar TEM (SAPTEM) Sample Preparation Procedure for Failure Analysis of Integrated Circuits

1998 ◽  
Author(s):  
S. Subramanian ◽  
P. Schani ◽  
E. Widener ◽  
P. Liston ◽  
J. Moss ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Ion Beam ◽  
Preparation Technique ◽  
Mechanical Grinding ◽  
Cross Sectional ◽  
Plan View ◽  
The Cross

Abstract A selected area planar TEM (SAPTEM) sample preparation technique for failure analysis of integrated circuits using a transmission electron microscope has been developed. The technique employs a combination of mechanical grinding, selective wet/dry chemical etching (if required) and a two step focused ion beam IIFIB) milling. The mechanical grinding steps include: (a) a backside grind to achieve a die thickness less than 30 µm, (b) the support half ring glue, and (c) a cross-section grind from one side to reach less than 35 pm to the failing site. A selective wet or dry chemical etch is applied before, between,, or after FIB thinning depending on the nature of problem and device components. The FIB milling steps involve: (is) a high ion current cross-sectional cut to reach as close as 5-8 µm to the area of interest (b) a final planar thinning with the ion beam parallel to the surface of the die. The plan view procedure offers unique geometric advantage over the cross-section method for failure analysis of problems that are limited to silicon or certain layers of the device. Iln the cross-sectional approach, a thin section (thickness less than 250 µm) of a device is available for failure analysis, whereas in the planar procedure a 20 µm2 area of any layer (thickness less than 250 µm) of the device is available. The above advantage has been successfully exploited to identify and solve the following prablems in fast static random access memories (FSRAM): (i) random gateoxide rupture that resulted in single bit failures, (ii) random dislocations from the buried contact trenching that caused single bit failures and general silicon defectivity (e.g. implant damage and spacer edge defects), and (iii) interracial reactions.

Focused Ion Beam Characterization of Bicomponent Polymer Fibers

2010 ◽  
Vol 16 (3) ◽  
pp. 282-290 ◽  
Author(s):  
K.C. Wong ◽  
C.M. Haslauer ◽  
N. Anantharamaiah ◽  
B. Pourdeyhimi ◽  
A.D. Batchelor ◽  
...  
Keyword(s):  
Melt Spinning ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Surface ◽  
High Signal ◽  
Cross Sectional ◽  
Location Selection ◽  
The Cross ◽  
Polymeric Fiber

AbstractPrevious work has shown that focused ion beam (FIB) nanomachining can be effectively utilized for the cross-sectional analysis of polymers such as core-shell solid microspheres and hollow latex nanospheres. While these studies have clearly demonstrated the precise location selection and nanomachining control provided by the FIB technique, the samples studied consisted of only a single polymer. In this work, FIB is used to investigate bicomponent polymeric fiber systems by taking advantage of the component's differing sputter rates that result from their differing physical properties. An approach for cross sectioning and thus revealing the cross-sectional morphology of the polymeric components in a bicomponent polymeric fiber with the island-in-the-sea (I/S) structure is presented. The two I/S fibers investigated were fabricated using the melt spinning process and are composed of bicomponent combinations of linear low density polyethylene (LLDPE) and nylon 6 (PA6) or polylactic acid (PLA) and an EastONETMproprietary polymer. Topographical contrast as a result of differential sputtering and the high surface specificity and high signal-to-noise obtained using FIB-induced secondary electron imaging is shown to provide a useful approach for the rapid characterization of the cross-sectional morphology of bicomponent polymeric fibers without the necessity of staining or other sample preparation.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Sign in / Sign up

Export Citation Format

Share Document