Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Heteroepitaxy of GaN on Silicon: In Situ Measurements

2005 ◽  
Vol 483-485 ◽  
pp. 1051-1056
Author(s):  
A. Krost ◽  
Armin Dadgar ◽  
F. Schulze ◽  
R. Clos ◽  
K. Haberland ◽  
...  
Keyword(s):  
Low Cost ◽  
Group Iii Nitrides ◽  
In Situ Monitoring ◽  
Attractive Alternative ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Thermal Expansion Coefficients ◽  
Long Time

Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical etching, lower hardness, good thermal conductivity, and electrical conducting or isolating for light emitting devices or transistor structures, respectively. However, for a long time, a technological breakthrough of GaN-on-silicon has been thought to be impossible because of the cracking problem originating in the huge difference of the thermal expansion coefficients between GaN and silicon which leads to tensile strain and cracking of the layers when cooling down. However, in recent years, several approaches to prevent cracking and wafer bowing have been successfully applied. Nowadays, device-relevant thicknesses of crackfree group-III-nitrides can be grown on silicon. To reach this goal the most important issues were the identification of the physical origin of strains and its engineering by means of in situ monitoring during metalorganic vapor phase epitaxy.

Group III nitride-based UV light emitting devices

2003 ◽  
Vol 195 (3) ◽  
pp. 491-495 ◽  
Author(s):  
H. Amano ◽  
S. Takanami ◽  
M. Iwaya ◽  
S. Kamiyama ◽  
I. Akasaki
Keyword(s):  
Uv Light ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Group Iii Nitride

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 44 (8) ◽  
pp. 815-816
Author(s):  
Igor L Krestnikov ◽  
V V Lundin ◽  
A V Sakharov ◽  
D A Bedarev ◽  
E E Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

scholarly journals Многообразие свойств приборных структур на основе нитридов элементов III группы, связанное с модификацией фрактально-перколяционной системы

2018 ◽  
Vol 52 (7) ◽  
pp. 804
Author(s):  
В.В. Емцев ◽  
Е.В. Гущина ◽  
В.Н. Петров ◽  
Н.А. Тальнишних ◽  
А.Е. Черняков ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Group Iii Nitrides ◽  
Growth Conditions ◽  
High Electron ◽  
Extended Defects ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Fractal Percolation ◽  
Gan Hemt

AbstractA fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.

Probing local photophysical properties in perovskite based light-emitting devices

2019 ◽  
Author(s):  
Miguel Anaya ◽  
Kyle Frohna ◽  
Linsong Cui ◽  
Javad Shamsi ◽  
Sam Stranks
Keyword(s):  
Photophysical Properties ◽  
Light Emitting ◽  
Light Emitting Devices
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