scholarly journals Mitigation of Electro Magnetic Interference by Using C-Shaped Composite Cylindrical Device

2022 ◽  
Vol 12 (2) ◽  
pp. 882
Author(s):  
Yu-Lin Song ◽  
Manoj Kumar Reddy ◽  
Hung-Yung Wen ◽  
Luh-Maan Chang
Keyword(s):  
Electron Microscopy ◽  
Electromagnetic Field ◽  
Electromagnetic Interference ◽  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Iron Alloy ◽  
External Electromagnetic Field ◽  
Active Shielding ◽  
Shielding System

The extremely low-frequency (ELF) and its corresponding electromagnetic field influences the yield of CMOS processes in the foundry, especially for high-end equipment such as scanning electron microscopy (SEM) systems, transmission electron microscopy (TEM) systems, focused ion beam (FIB) systems, and electron beam lithography (E-Beam) systems. There are several techniques to mitigate electromagnetic interference (EMI), among which active shielding systems and passive shielding methods are widely used. An active shielding system is used to generate an internal electromagnetic field to reduce the detected external electromagnetic field in electric coils with the help of the current. Although the active shielding system reduces the EMI impact, it induces an internal electromagnetic field that could affect the function of nearby tools and/or high-performance probes. Therefore, in this study, we have used a C-shaped cylindrical device combined with an active shielding system and passive shielding techniques to reduce EMI for online monitoring and to overcome the aforementioned issues. In this study, the active shielding system was wrapped with a permalloy composite material (i.e., a composite of nickel and iron alloy) as a tubular device. A C-shaped opening was made on the tubular structure vertically or horizontally to guide the propagation of the electromagnetic field. This C-shaped cylindrical device further reduced electromagnetic noise up to −5.06 dB and redirected the electromagnetic field toward the opening direction on the cylindrical device. The results demonstrated a practical reduction of the electromagnetic field.

A controllable and efficient method for the fabrication of a single HfC nanowire field-emission point electron source aided by low keV FIB milling

Nanoscale ◽  
2020 ◽  
Vol 12 (32) ◽  
pp. 16770-16774 ◽  
Author(s):  
Shuai Tang ◽  
Jie Tang ◽  
Ta-Wei Chiu ◽  
Jun Uzuhashi ◽  
Dai-Ming Tang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Atom Probe Tomography ◽  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Emission Measurement ◽  
Hafnium Carbide ◽  
Emission Point

A high-performance single hafnium carbide (HfC) nanowire field-induced electron emitter, sharpened with focused ion beam (FIB), is characterized by electron microscopy, atom probe tomography, and field-emission measurement.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section

1997 ◽  
Author(s):  
J. Douglass ◽  
T. D. Myers ◽  
F. Tsai ◽  
R. Ketcheson ◽  
J. Errett
Keyword(s):  
Electron Microscopy ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Yield Loss ◽  
Process Analysis ◽  
Ion Beam ◽  
Yield Improvement ◽  
Transmission Electron ◽  
Defect Mechanism ◽  
Water Residue

Abstract This paper describes how the authors used a combination of focused ion beam (FIB) microprobing, transmission electron microscopy (TEM), and data and process analysis to determine that localized water residue was causing a 6% yield loss at die sort.

scholarly journals Protocol for preparation of heterogeneous biological samples for 3D electron microscopy: a case study for insects

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexey A. Polilov ◽  
Anastasia A. Makarova ◽  
Song Pang ◽  
C. Shan Xu ◽  
Harald Hess
Keyword(s):  
Electron Microscopy ◽  
Biological Samples ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Entire Volume ◽  
Simple Protocol ◽  
3D Electron Microscopy ◽  
3D Em

AbstractModern morphological and structural studies are coming to a new level by incorporating the latest methods of three-dimensional electron microscopy (3D-EM). One of the key problems for the wide usage of these methods is posed by difficulties with sample preparation, since the methods work poorly with heterogeneous (consisting of tissues different in structure and in chemical composition) samples and require expensive equipment and usually much time. We have developed a simple protocol allows preparing heterogeneous biological samples suitable for 3D-EM in a laboratory that has a standard supply of equipment and reagents for electron microscopy. This protocol, combined with focused ion-beam scanning electron microscopy, makes it possible to study 3D ultrastructure of complex biological samples, e.g., whole insect heads, over their entire volume at the cellular and subcellular levels. The protocol provides new opportunities for many areas of study, including connectomics.

scholarly journals Resolving physical interactions between bacteria and nanotopographies with focused ion beam scanning electron microscopy.

iScience ◽  
2021 ◽  
pp. 102818
Author(s):  
J. Jenkins ◽  
Mohd I. Ishak ◽  
M. Eales ◽  
A. Gholinia ◽  
S. Kulkarni ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Scanning ◽  
Physical Interactions ◽  
Scanning Electron

scholarly journals Kerogen nanoscale structure and CO2 adsorption in shale micropores

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aleksandra Gonciaruk ◽  
Matthew R. Hall ◽  
Michael W. Fay ◽  
Christopher D. J. Parmenter ◽  
Christopher H. Vane ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Composition ◽  
Focused Ion Beam ◽  
Gas Adsorption ◽  
Ion Beam ◽  
Molecular Size ◽  
Gas Sorption ◽  
Nanoscale Structures ◽  
Adsorption Sites ◽  
Nanoscale Structure

AbstractGas storage and recovery processes in shales critically depend on nano-scale porosity and chemical composition, but information about the nanoscale pore geometry and connectivity of kerogen, insoluble organic shale matter, is largely unavailable. Using adsorption microcalorimetry, we show that once strong adsorption sites within nanoscale network are taken, gas adsorption even at very low pressure is governed by pore width rather than chemical composition. A combination of focused ion beam with scanning electron microscopy and transmission electron microscopy reveal the nanoscale structure of kerogen includes not only the ubiquitous amorphous phase but also highly graphitized sheets, fiber- and onion-like structures creating nanoscale voids accessible for gas sorption. Nanoscale structures bridge the current gap between molecular size and macropore scale in existing models for kerogen, thus allowing accurate prediction of gas sorption, storage and diffusion properties in shales.

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