scholarly journals Properties of Hafnium and Aluminium Silicates Coatings Obtained by PLD

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 753
Author(s):  
Eduard N. Sirjita ◽  
Laurentiu Rusen ◽  
Simona Brajnicov ◽  
Cristina Craciun ◽  
Valentin Ion ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Damage Threshold ◽  
Processing Technique ◽  
Laser Wavelength ◽  
Hafnium Silicate ◽  
Vis Spectroscopy ◽  
Laser Induced Damage ◽  
Silicate Layers ◽  
Aluminium Silicate

We report on the deposition and characterization of hafnium silicate and aluminium silicate thin films for different applications in optics and electronics. Pulsed laser deposition in a controllable oxygen atmosphere was used as a processing technique, with optimized parameters in terms of laser wavelength, laser fluence and oxygen pressure. The thin films were investigated using atomic force microscopy, spectroscopic ellipsometry, UV–VIS spectroscopy and X-ray photoelectron spectroscopy. The morphological investigations evidenced uniform layers with low roughness (in the order of nanometres). The optical investigations revealed that aluminium silicate layers with low roughness and low absorption in the infrared (IR) range can be obtained at high substrate temperatures (600 °C). The behaviour of the silicate thin films with respect to the nanosecond IR laser irradiation revealed that aluminium silicate layers have higher laser-induced damage threshold values in comparison with hafnium silicate.

Growth and Characterizations of Indium-Doped Pentacene Thinfilm Prepared by Thermal Co-Evaporation as a Novel Nanomaterial

2015 ◽  
Vol 1131 ◽  
pp. 35-38
Author(s):  
Navaphun Kayunkid ◽  
Annop Chanhom ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Charge Carrier Mobility ◽  
Electrical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Vis Spectroscopy ◽  
Hybrid Thin Films

This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Ablation of Graphite in Nitrogen Atmosphere

1998 ◽  
Vol 526 ◽  
Author(s):  
Z.M. Ren ◽  
Y.F. Lu ◽  
W.D. Song ◽  
D.S.H. Chan ◽  
T.S. Low ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Pressure ◽  
Laser Wavelength ◽  
Nitrogen Atmosphere ◽  
Amorphous Semiconductor ◽  
X Ray ◽  
Krf Excimer Laser

AbstractCarbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.

Optical, Structural and Laser-Induced Damage Threshold Properties of HfO 2 Thin Films Prepared by Electron Beam Evaporation

2005 ◽  
Vol 22 (5) ◽  
pp. 1246-1248 ◽  
Author(s):  
Zhan Mei-Qiong ◽  
Zhang Dong-Ping ◽  
Tan Tian-Ya ◽  
He Hong-Bo ◽  
Shao Jian-Da ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Damage Threshold ◽  
Electron Beam Evaporation ◽  
Laser Induced Damage

Nitridation of Hafnium Silicate Thin Films

2004 ◽  
Vol 811 ◽  
Author(s):  
Hood Chatham ◽  
Yoshi Senzaki ◽  
Jeff Bailey ◽  
Wesley Nieveen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Nitrogen Plasma ◽  
Process Conditions ◽  
Atomic Nitrogen ◽  
Hafnium Silicate ◽  
X Ray ◽  
Nitrogen Concentrations ◽  
Nitridation Temperature

ABSTRACTWe discuss the nitridation of ALD-deposited hafnium silicate films by exposure to atomic nitrogen generated in a remote nitrogen plasma. Nitrogen concentration [N] as measured by X-ray photoelectron spectroscopy (XPS) is determined as a function of the nitridation temperature and other process conditions. Nitrogen concentrations up to 13.7 atomic % were achieved.

Influence of Laser-Conditioning on Laser-Induced Damage Properties of ZnSe Thin Films

2012 ◽  
Vol 602-604 ◽  
pp. 1437-1443
Author(s):  
Feng Zou ◽  
Jun Qi Xun ◽  
Jun Hong Su ◽  
Jian Bo Ma
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Wave Length ◽  
Single Layer ◽  
Damage Threshold ◽  
Processing Parameters ◽  
Spot Size ◽  
Pulse Number ◽  
Optical Films ◽  
Laser Induced Damage

With the development of high power laser systems, laser protection of optical components becomes more and more important. In order to enhance the laser-induced damage capability of optical films components, besides advanced methods and processes, post-treatment has significant influence on the laser-induced damage threshold (LIDT) of thin films. Q switch Nd:YAG laser of the working wave length at 1064nm, was used to post process on ZnSe single layer films with thickness of /2 (=1064nm) deposited by thermal evaporation, and the laser-induced damage and optical properties were investigated. By changing the energy density and pulse number under the spot size remained a fixed value, their effects on thin films damage threshold were studied respectively, the optimal processing parameters were obtained: energy density is 3.0 J/cm2 and pulse number is 1.The LIDT of post processed ZnSe films was improved from 5.0J/cm2 to 8.2J/cm2.

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