scholarly journals Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 632 ◽  
Author(s):  
Wooseok Lee ◽  
Hyunuk Kang ◽  
Seokgyu Choi ◽  
Sangmin Lee ◽  
Hosang Kwon ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Current Model ◽  
Large Signal ◽  
Signal Model ◽  
Channel Current ◽  
Gan Hemt ◽  
Model Based ◽  
Em Simulation ◽  
Simulation Results ◽  
Load Pull

This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

2011 ◽  
Vol 20 ◽  
pp. 27-36 ◽  
Author(s):  
Lei Sang ◽  
Yuehang Xu ◽  
Yongbo Chen ◽  
Yunnchuan Guo ◽  
Rui-Min Xu
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Large Signal ◽  
Gan Hemt

scholarly journals Modeling and Control of Double-Sided LCC Compensation Topology with Semi-Bridgeless Active Rectifier for Inductive Power Transfer System

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3921
Author(s):  
Cha ◽  
Kim ◽  
Park ◽  
Choi
Keyword(s):  
Steady State ◽  
Equivalent Circuit ◽  
Small Signal ◽  
Power Transfer ◽  
Large Signal ◽  
Signal Model ◽  
Worst Case ◽  
Inductive Power Transfer ◽  
Active Rectifier ◽  
Inductive Power

This paper proposes the modeling and design of a controller for an inductive power transfer (IPT) system with a semi-bridgeless active rectifier (S-BAR). This system consists of a double-sided Inductor-Capacitor-Capacitor (LCC) compensation network and an S-BAR, and maintains a constant output voltage under load variation through the operation of the rectifier switches. Accurate modeling is essential to design a controller with good performance. However, most of the researches on S-BAR have focused on the control scheme for the rectifier switches and steady-state analysis. Therefore, modeling based on the extended describing function is proposed for an accurate dynamic analysis of an IPT system with an S-BAR. Detailed mathematical analyses of the large-signal model, steady-state operating solution, and small-signal model are provided. Nonlinear large-signal equivalent circuit and linearized small-signal equivalent circuit are presented for intuitive understanding. In addition, worst case condition is selected under various load conditions and a controller design process is provided. To demonstrate the effectiveness of the proposed modeling, experimental results using a 100 W prototype are presented.

The Study of Traveling Wave Tube Large Signal Model Based on Machine Learning

2021 ◽  
Author(s):  
Niankang Li ◽  
Hairong Yin ◽  
Zhuoyun Li ◽  
Dongdong Jia ◽  
Zhang Shen ◽  
...  
Keyword(s):  
Machine Learning ◽  
Traveling Wave ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
Large Signal ◽  
Signal Model ◽  
Model Based
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