Simple large-signal model based on gyrator for system level analysis

2011 ◽  
Author(s):  
Weijing Du ◽  
Yang Zhang ◽  
Junming Zhang ◽  
Zhaoming Qian
Keyword(s):  
System Level ◽  
Large Signal ◽  
Signal Model ◽  
Model Based ◽  
Level Analysis

MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

The Study of Traveling Wave Tube Large Signal Model Based on Machine Learning

2021 ◽  
Author(s):  
Niankang Li ◽  
Hairong Yin ◽  
Zhuoyun Li ◽  
Dongdong Jia ◽  
Zhang Shen ◽  
...  
Keyword(s):  
Machine Learning ◽  
Traveling Wave ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

Evaporative Cooling for Polymer Electrolyte Fuel Cells – a Model Based System Level Analysis

2021 ◽  
Vol MA2021-01 (1) ◽  
pp. 68-68
Author(s):  
Michael Striednig ◽  
Magali Cochet ◽  
Pierre Boillat ◽  
Thomas J. Schmidt ◽  
Felix N. Buechi
Keyword(s):  
Fuel Cells ◽  
Polymer Electrolyte ◽  
Evaporative Cooling ◽  
Polymer Electrolyte Fuel Cells ◽  
System Level ◽  
Model Based ◽  
Level Analysis

Large-signal model of a resonating cantilever-based transducer for system level electrical simulation

2005 ◽  
Author(s):  
Jaume Verd ◽  
Jordi Teva ◽  
Gabriel Abadal ◽  
Francesc Perez-Murano ◽  
Jaume Esteve ◽  
...  
Keyword(s):  
System Level ◽  
Large Signal ◽  
Signal Model ◽  
Electrical Simulation

scholarly journals Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 632 ◽  
Author(s):  
Wooseok Lee ◽  
Hyunuk Kang ◽  
Seokgyu Choi ◽  
Sangmin Lee ◽  
Hosang Kwon ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Current Model ◽  
Large Signal ◽  
Signal Model ◽  
Channel Current ◽  
Gan Hemt ◽  
Model Based ◽  
Em Simulation ◽  
Simulation Results ◽  
Load Pull

This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

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