scholarly journals Surface Texturing of Si with Periodically Arrayed Oblique Nanopillars to Achieve Antireflection

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 380
Author(s):  
Jun-Hyun Kim ◽  
Sanghyun You ◽  
Chang-Koo Kim
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Surface Texturing ◽  
Light Reflection ◽  
Si Substrate ◽  
Weighted Mean ◽  
Optical Reflectance ◽  
Si Substrates ◽  
Aspect Ratios ◽  
Shadowing Effect

Si surfaces were texturized with periodically arrayed oblique nanopillars using slanted plasma etching, and their optical reflectance was measured. The weighted mean reflectance (Rw) of the nanopillar-arrayed Si substrate decreased monotonically with increasing angles of the nanopillars. This may have resulted from the increase in the aspect ratio of the trenches between the nanopillars at oblique angles due to the shadowing effect. When the aspect ratios of the trenches between the nanopillars at 0° (vertical) and 40° (oblique) were equal, the Rw of the Si substrates arrayed with nanopillars at 40° was lower than that at 0°. This study suggests that surface texturing of Si with oblique nanopillars reduces light reflection compared to using a conventional array of vertical nanopillars.

The Benefits of Process Parameter Ramping During The Plasma Etching of High Aspect Ratio Silicon Structures

1998 ◽  
Vol 546 ◽  
Author(s):  
J. Hopkins ◽  
H. Ashraf ◽  
J. K. Bhardwaj ◽  
A. M. Hynes ◽  
I. Johnston ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Etch Rate ◽  
Critical Dimension ◽  
Optical Devices ◽  
Aspect Ratios ◽  
Dimension Control ◽  
Silicon Structures ◽  
High Etch Rate ◽  
Product Specifications

AbstractIn the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, (ASETM). process satisfies the demanding requirements of the industry. Typically, highly anisotropic. high aspect ratios profiles with fine CD (critical dimension) control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 10μm/min are demonstrated. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASETM process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often-conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.

Proton channeling into the Si substrate at the bottom of ultrahigh-aspect-ratio contact holes during plasma etching

2000 ◽  
Vol 374 (2) ◽  
pp. 228-234 ◽  
Author(s):  
Takashi Ichimori ◽  
Naokatsu Ikegami ◽  
Norio Hirashita ◽  
Jun Kanamori
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Si Substrate

Enhanced Diamond Nucleation by Surface Texturing of Si Substrate in SF6/O2 Plasmas

2013 ◽  
Vol 432 ◽  
pp. 61-65
Author(s):  
Jong Cheon Park ◽  
Ok Geun Jeong ◽  
Sang Youn Kim ◽  
Tae Gyu Kim ◽  
Jin Kon Kim ◽  
...  
Keyword(s):  
Surface Texturing ◽  
Diamond Films ◽  
Nucleation Density ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Mechanical Abrasion ◽  
Si Substrates ◽  
Ultrananocrystalline Diamond ◽  
Process Pressure ◽  
Density Surface

SF6/O2 plasma surface texturing was employed to pretreat Si substrate for achieving enhanced diamond nucleation density. Surface roughness of the textured Si was found to be strongly dependent on the process pressure and normalized roughness values in the range of 2-16 were obtained. Remarkably enhanced nucleation densities of ~1010 cm-2 compared to conventional mechanical abrasion were obtained after seeding for the surface textured Si substrates. Raman spectroscopy revealed that ultrananocrystalline diamond films with grain size below 10 nm were grown on the surface textured Si.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

scholarly journals Effects of Steel Fiber Percentage and Aspect Ratios on Fresh and Harden Properties of Ultra-High Performance Fiber

2021 ◽  
Vol 2 (3) ◽  
pp. 501-515
Author(s):  
Rajib Kumar Biswas ◽  
Farabi Bin Ahmed ◽  
Md. Ehsanul Haque ◽  
Afra Anam Provasha ◽  
Zahid Hasan ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Aspect Ratio ◽  
High Performance ◽  
Steel Fiber ◽  
Setting Time ◽  
Fiber Reinforced Concrete ◽  
Future Research ◽  
Manufacturing Cost ◽  
Aspect Ratios ◽  
High Performance Fiber

Steel fibers and their aspect ratios are important parameters that have significant influence on the mechanical properties of ultrahigh-performance fiber-reinforced concrete (UHPFRC). Steel fiber dosage also significantly contributes to the initial manufacturing cost of UHPFRC. This study presents a comprehensive literature review of the effects of steel fiber percentages and aspect ratios on the setting time, workability, and mechanical properties of UHPFRC. It was evident that (1) an increase in steel fiber dosage and aspect ratio negatively impacted workability, owing to the interlocking between fibers; (2) compressive strength was positively influenced by the steel fiber dosage and aspect ratio; and (3) a faster loading rate significantly improved the mechanical properties. There were also some shortcomings in the measurement method for setting time. Lastly, this research highlights current issues for future research. The findings of the study are useful for practicing engineers to understand the distinctive characteristics of UHPFRC.

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

scholarly journals Strength Analysis of Alternative Airframe Layouts of Regional Aircraft on the Basis of Automated Parametrical Models

Aerospace ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 80
Author(s):  
Dmitry V. Vedernikov ◽  
Alexander N. Shanygin ◽  
Yury S. Mirgorodsky ◽  
Mikhail D. Levchenkov
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
High Performance ◽  
Strength Analysis ◽  
Labor Input ◽  
Aerodynamic Loading ◽  
Aspect Ratios ◽  
Wide Range ◽  
Parametrical Design

This publication presents the results of complex parametrical strength investigations of typical wings for regional aircrafts obtained by means of the new version of the four-level algorithm (FLA) with the modified module responsible for the analysis of aerodynamic loading. This version of FLA, as well as a base one, is focused on significant decreasing time and labor input of a complex strength analysis of airframes by using simultaneously different principles of decomposition. The base version includes four-level decomposition of airframe and decomposition of strength tasks. The new one realizes additional decomposition of alternative variants of load cases during the process of determination of critical load cases. Such an algorithm is very suitable for strength analysis and designing airframes of regional aircrafts having a wide range of aerodynamic concepts. Results of validation of the new version of FLA for a high-aspect-ratio wing obtained in this work confirmed high performance of the algorithm in decreasing time and labor input of strength analysis of airframes at the preliminary stages of designing. During parametrical design investigation, some interesting results for strut-braced wings having high aspect ratios were obtained.

Influence of nozzle exit geometrical parameters on supersonic jet decay

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Prasanta Kumar Mohanta ◽  
B. T. N. Sridhar ◽  
R. K. Mishra
Keyword(s):  
Aspect Ratio ◽  
Nozzle Exit ◽  
Ambient Air ◽  
Schlieren Image ◽  
Geometrical Parameters ◽  
Image Study ◽  
Aspect Ratios ◽  
Core Length ◽  
Supersonic Core Length ◽  
The Impact

Abstract Experiments and simulations were carried on C-D nozzles with four different exit geometry aspect ratios to investigate the impact of supersonic decay characteristics. Rectangular and elliptical exit geometries were considered for the study with various aspect ratios. Numerical simulations and Schlieren image study were studied and found the agreeable logical physics of decay and spread characteristics. The supersonic core decay was found to be of different length for different exit geometry aspect ratio, though the throat to exit area ratio was kept constant to maintain the same exit Mach number. The impact of nozzle exit aspect ratio geometry was responsible to enhance the mixing of primary flow with ambient air, without requiring a secondary method to increase the mixing characteristics. The higher aspect ratio resulted in better mixing when compared to lower aspect ratio exit geometry, which led to reduction in supersonic core length. The behavior of core length reduction gives the identical signature for both under-expanded and over-expanded cases. The results revealed that higher aspect ratio of the exit geometry produced smaller supersonic core length. The aspect ratio of cross section in divergent section of the nozzle was maintained constant from throat to exit to reduce flow losses.

scholarly journals Aspect Ratio Driven Relationship between Nozzle Internal Flow and Supersonic Jet Mixing

Aerospace ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 78
Author(s):  
Kalyani Bhide ◽  
Kiran Siddappaji ◽  
Shaaban Abdallah
Keyword(s):  
Boundary Layer ◽  
Aspect Ratio ◽  
Nozzle Exit ◽  
Supersonic Jet ◽  
Internal Flow ◽  
Shear Stresses ◽  
Loss Mechanism ◽  
Potential Core ◽  
Jet Mixing ◽  
Aspect Ratios

This work attempts to connect internal flow to the exit flow and supersonic jet mixing in rectangular nozzles with low to high aspect ratios (AR). A series of low and high aspect ratio rectangular nozzles (design Mach number = 1.5) with sharp throats are numerically investigated using steady state Reynolds-averaged Navier−Stokes (RANS) computational fluid dynamics (CFD) with k-omega shear stress transport (SST) turbulence model. The numerical shadowgraph reveals stronger shocks at low ARs which become weaker with increasing AR due to less flow turning at the throat. Stronger shocks cause more aggressive gradients in the boundary layer resulting in higher wall shear stresses at the throat for low ARs. The boundary layer becomes thick at low ARs creating more aerodynamic blockage. The boundary layer exiting the nozzle transforms into a shear layer and grows thicker in the high AR nozzle with a smaller potential core length. The variation in the boundary layer growth on the minor and major axis is explained and its growth downstream the throat has a significant role in nozzle exit flow characteristics. The loss mechanism throughout the flow is shown as the entropy generated due to viscous dissipation and accounts for supersonic jet mixing. Axis switching phenomenon is also addressed by analyzing the streamwise vorticity fields at various locations downstream from the nozzle exit.

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