scholarly journals Formamidinium Lead Iodide Perovskite Films with Polyvinylpyrrolidone Additive for Active Layer in Perovskite Solar Cells, Enhanced Stability and Electrical Conductivity

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4594
Author(s):  
Vedran Kojić ◽  
Mario Bohač ◽  
Arijeta Bafti ◽  
Luka Pavić ◽  
Krešimir Salamon ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Active Layer ◽  
Electrical Impedance Spectroscopy ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Ambient Atmosphere ◽  
Optical And Electrical Properties ◽  
Lead Iodide

In this paper, we studied the influence of polyvinylpyrrolidone (PVP) as a stabilization additive on optical and electrical properties of perovskite formamidinium lead iodide (FAPI) polycrystalline thin films on ZnO nanorods (ZNR). FAPI (as an active layer) was deposited from a single solution on ZNR (low temperature processed electron transport layer) using a one-step method with the inclusion of an anti-solvent. The role of PVP in the formation of the active layer was investigated by scanning electron microscopy and contact angle measurements to observe the effect on morphology, while X-ray diffraction was used as a method to study the stability of the film in an ambient environment. The effect of the PVP additive on the optical and electrical properties of the perovskite thin films was studied via photoluminescence, UV-Vis measurements, and electrical impedance spectroscopy. We have demonstrated that PVP inclusion in solution-processed perovskite FAPI thin films prevents the degradation of the film in an ambient atmosphere after aging for 2 months. The inclusion of the PVP also improves the infiltration of FAPI perovskite into ZnO nanostructures, increases electrical conductivity and radiative recombination of the photo-generated charge carriers. These results show promising information for promoting PVP stabilized FAPI perovskites for the new generation of photovoltaic devices.

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

scholarly journals Study on Optical and Electrical Properties of Thermally Evaporated Tin Oxide Thin Films for Perovskite Solar Cells

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1380
Author(s):  
Wen-Man Bin ◽  
Wen-Han Huang ◽  
Wei-Chun Lin ◽  
Hyeonseok Lee
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Window Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Key Factor ◽  
Sno2 Thin Films

Perovskite solar cells were fabricated with SnO2 thin films as a window layer and electron transport layer by thermal evaporation. Fundamental characteristics of SnO2 thin films to determine the performance of solar cells were investigated in an optical and electrical manner, varying annealing temperatures. It is found the crystallinity and the presence of localized energy states play a key factor to control the properties of SnO2. In addition, XPS was used to confirm the stoichiometry of the SnO2 thin films, indicating a better charge collection on the annealed SnO2 samples. The SnO2 thin films annealed at 300 °C exhibited desirable optical and electrical properties for the enhanced performance of solar cells. The results show that thermally evaporated SnO2 thin films can be precisely engineered and controlled for mass production and more practical industrialization of perovskite solar cells.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

scholarly journals Optical and Electrical Properties of Graphite Thin Films Prepared by Different Methods

2020 ◽  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electron Beam ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Electron Beam Evaporation ◽  
Specific Electrical Conductivity ◽  
Simultaneous Increase ◽  
Optical And Electrical Properties

The paper reports on the structural, optical and electrical properties of graphite thin films prepared by two methods: the vacuum-free method "Pencil-on-semiconductor" and via the electron beam evaporation. Graphite thin films prepared by the non-vacuum method has annealed at a temperature of 920K.The transmission spectra of the investigated graphite films and the electrical properties of these thin films were measured at T = 300 K. The value of the height of barriers Eb at the grain boundaries and the temperature dependence of the electrical conductivity in the range ln(σ·T1/2) = f(103/T) were determined, It is established that the height of the barrier at the grain boundaries for the drawn graphite films is Eb = 0.03 eV, for annealed Eb = 0.01 eV and for the graphite films deposited by the electron beam evaporation Eb = 0.04 eV, ie for annealed film the barrier height is the smallest. It is shown that graphite films deposited by the electron beam evaporation reveals the highest transmittance (T550 ≈ 60%), and the transmission of drawn films is the lowest, annealing leads to its increase. The minimum values ​​of transmission at a wavelength λ = 250nm are due to the scattering of light at the defects that are formed at the grain boundaries. Annealed graphite films have been found to possess the best structural perfection because they have the lowest resistivity compared to non-annealed films and electron-beam films and have the lowest barrier height. Simultaneous increase of transmission in the whole spectral range, increase of specific electrical conductivity and decrease of potential barrier at grain boundaries of the annealed drawn graphite film clearly indicate ordering of drawn graphite flakes transferred onto anew substrate, which led to the reduction of light scattering and the improvement of charge transport due to the larger area of ​​overlap between graphite flakes.

Structural, optical and electrical properties of transparent conducting CuInO2 thin films prepared by RF sputtering

2005 ◽  
Vol 865 ◽  
Author(s):  
Bin Yang ◽  
Yunbin He ◽  
Angalika Polity ◽  
Bruno K. Meyer
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Band Gap ◽  
Rf Sputtering ◽  
Wavelength Dependence ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
Transparent Conducting ◽  
Delafossite Structure

AbstractThe transparent conducting CuInO2 thin films were prepared by radio frequency (RF) reactive sputtering and post growth annealing. A study of structural, optical, and electrical properties was performed on the films. The crystalline phase in the films was identified to be the delafossite structure. The optical properties, such as the wavelength dependence of the transmittance and the band gap energy, were determined. The average transmittance is 70% in the wavelength range of 400-1100 nm and the band gap is ˜3.7 eV. The temperaturedependence of electrical conductivity in the CuInO2 delafossite thin films was measured from 70 to 400K. The resistivity, carrier density, and mobility of the thin films at 300K were 1.8x101 Δcm, 1.6x1019 cm-3 and 2x10-1 cm2/Vs, respectively. Hall coefficient indicated that the CuInO2 thin films are n-type conductors. The electrical conductivity showed semiconducting type at room temperature.

scholarly journals Growth and Characterization of Cu2MnSnS4 Thin Films Synthesized by Spray Pyrolysis under Air Atmosphere

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 963
Author(s):  
Sarra Dridi ◽  
Eric Aubry ◽  
Nabila Bitri ◽  
Fatma Chaabouni ◽  
Pascal Briois
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Deposition Temperature ◽  
Spray Pyrolysis Technique ◽  
Ambient Air ◽  
Ambient Atmosphere ◽  
Optical And Electrical Properties ◽  
Carrier Gas

The direct synthesis of chalcopyrite Cu2MnSnS4 (CMTS) thin films by a spray pyrolysis technique on glass substrates under oxidative conditions (ambient atmosphere and using compressed air as a carrier gas instead of nitrogen) was studied. The effect of the deposition temperature on the structural, chemical composition, and optical and electrical properties of thin films has been assessed. X-ray diffraction study reveals that the tetragonal stannite structure crystallizes with a [112] preferential orientation from 280 up to 360 °C, with its crystallinity correlated with the substrate temperature. However, in addition to its crystallization, traces of secondary phases are observed: a mixture of SnO and CuO at 360 °C prevails on the formation of CuS at 320 °C. Above 360 °C, the oxidant conditions combined with the loss in sulfur lead to the crystallization of only the tenorite CuO. The crystallization of sulfides by spray pyrolysis under air is possible only at relatively low deposition temperature for which the oxidation rate is inefficient compared to the sulfidation rate. Further optical studies of stannite films indicate a high absorption coefficient toward the visible range (>104 cm−1) and an optical band gap of about 1.64–1.85 eV, also depending on the substrate temperature. The CMTS thin films deposited below 360 °C exhibit a moderate electrical resistivity of about Ω·cm at room temperature. The properties of the stannite films synthesized using a spray pyrolysis technique in ambient air are comparable to those of films obtained by spray pyrolysis with nitrogen carrier gas despite the presence of oxides traces, an increase in the deposition temperature improving the microstructure, and its related optical and electrical properties.

Gasochromic and electrical properties of Pt-nanoparticle-dispersed tungsten oxide thin films prepared by a sol-gel process

2012 ◽  
Vol 1400 ◽  
Author(s):  
Yuki Yamaguchi ◽  
Keishi Nishio ◽  
Tohru Kineri
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hydrogen Gas ◽  
Optical And Electrical Properties ◽  
Pt Nanoparticle ◽  
Gas Concentration ◽  
Sol Gel Process ◽  
The Relationship

ABSTRACTIt is well known that tungsten tri-oxide (WO3) exhibits electrochromic and gasochromic properties. When Pt-nanoparticle-dispersed tungsten oxide (Pt-WO3) is exposed to hydrogen gas, the optical and electrical properties of the Pt-WO3 change drastically. Consequently, it is expected that thin films of WO3 can be applied as hydrogen gas leakage sensors. In this study, thin films of Pt-WO3 were prepared on glass substrates using a sol-gel process. The optical and electrical properties of the films were evaluated. Amorphous and crystalline WO3 were easily obtained by changing the heat-treatment temperature. The ion diffusion coefficient of the film depended on the WO3 structure (i.e., whether it was amorphous or crystalline) because the density of amorphous WO3 is lower than that of crystalline WO3. Films with low crystallinity were found to have superior chromic properties to both those with high crystallinity and amorphous films. Thin films of Pt-WO3 prepared at 673K showed the largest change in optical transmittance and electrical conductivity when exposed to H2 gas compared with thin films prepared at other temperatures. When this film was exposed to 100% H2 gas, the normalized transmittance decreased rapidly (in less than 0.2 sec) from 100% to almost 50%. The optical absorbance of the film was dependent on the H2 gas concentration (mixed with N2 gas) in the range from 0.1 to 5% and the relationship between them was linear. The relationship between the electrical conductivity and hydrogen gas concentration (mixed with N2 gas) in the range from 100 to 10000ppm was also linear.

scholarly journals Structural, Optical and Electrical Properties of Al+MoO3 and Au+MoO3 Thin Films Prepared by Magnetron Codeposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 766
Author(s):  
Tihomir Car ◽  
Ivan Jakovac ◽  
Ivana Šarić ◽  
Sigrid Bernstorff ◽  
Maja Micetic
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Au Nanoparticle ◽  
Content Increase ◽  
Optical And Electrical Properties ◽  
Volume Percentage ◽  
Sputtering Deposition ◽  
Nanoparticle Formation ◽  
Al Content ◽  
Sputtering Power

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.

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