scholarly journals Study on Optical and Electrical Properties of Thermally Evaporated Tin Oxide Thin Films for Perovskite Solar Cells

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1380
Author(s):  
Wen-Man Bin ◽  
Wen-Han Huang ◽  
Wei-Chun Lin ◽  
Hyeonseok Lee
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Window Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Key Factor ◽  
Sno2 Thin Films

Perovskite solar cells were fabricated with SnO2 thin films as a window layer and electron transport layer by thermal evaporation. Fundamental characteristics of SnO2 thin films to determine the performance of solar cells were investigated in an optical and electrical manner, varying annealing temperatures. It is found the crystallinity and the presence of localized energy states play a key factor to control the properties of SnO2. In addition, XPS was used to confirm the stoichiometry of the SnO2 thin films, indicating a better charge collection on the annealed SnO2 samples. The SnO2 thin films annealed at 300 °C exhibited desirable optical and electrical properties for the enhanced performance of solar cells. The results show that thermally evaporated SnO2 thin films can be precisely engineered and controlled for mass production and more practical industrialization of perovskite solar cells.

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

scholarly journals Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

2019 ◽  
Vol 7 (44) ◽  
pp. 25347-25354 ◽  
Author(s):  
Huiyun Wei ◽  
Jionghua Wu ◽  
Peng Qiu ◽  
Sanjie Liu ◽  
Yingfeng He ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Transport Layer ◽  
Electron Transport Layer

Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.

scholarly journals Pulsed laser deposition of amorphous InGaZnO4 as an electron transport layer for perovskite solar cells

2019 ◽  
Vol 09 (05) ◽  
pp. 1950042 ◽  
Author(s):  
Shanming Ke ◽  
Bukui Du ◽  
Zhenggang Rao ◽  
Chun Huang ◽  
Peng Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electron Transport ◽  
Pulsed Laser Deposition ◽  
Perovskite Solar Cells ◽  
Pulsed Laser ◽  
Transport Layer ◽  
Laser Deposition ◽  
Electron Transport Layer ◽  
Amorphous Ingazno

Hybrid perovskite solar cells (PSCs) have been intensively studied in recent years because of their high efficiency and low costs. For PSCs, the electron transport layer (ETL) is a key for its photoelectric conversion efficiency. Here we demonstrate the application of amorphous InGaZnO4 thin films as ETL for efficient PSCs by pulsed laser deposition (PLD). The PSC device using such InGaZnO4 amorphous film as ETL has achieved an efficiency of 15.1%. The outstanding performance is attributed to the excellent properties of amorphous InGaZnO4 oxide thin films, including high electron mobility and high transparency, what is more, the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process. Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.

scholarly journals Formamidinium Lead Iodide Perovskite Films with Polyvinylpyrrolidone Additive for Active Layer in Perovskite Solar Cells, Enhanced Stability and Electrical Conductivity

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4594
Author(s):  
Vedran Kojić ◽  
Mario Bohač ◽  
Arijeta Bafti ◽  
Luka Pavić ◽  
Krešimir Salamon ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Active Layer ◽  
Electrical Impedance Spectroscopy ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Ambient Atmosphere ◽  
Optical And Electrical Properties ◽  
Lead Iodide

In this paper, we studied the influence of polyvinylpyrrolidone (PVP) as a stabilization additive on optical and electrical properties of perovskite formamidinium lead iodide (FAPI) polycrystalline thin films on ZnO nanorods (ZNR). FAPI (as an active layer) was deposited from a single solution on ZNR (low temperature processed electron transport layer) using a one-step method with the inclusion of an anti-solvent. The role of PVP in the formation of the active layer was investigated by scanning electron microscopy and contact angle measurements to observe the effect on morphology, while X-ray diffraction was used as a method to study the stability of the film in an ambient environment. The effect of the PVP additive on the optical and electrical properties of the perovskite thin films was studied via photoluminescence, UV-Vis measurements, and electrical impedance spectroscopy. We have demonstrated that PVP inclusion in solution-processed perovskite FAPI thin films prevents the degradation of the film in an ambient atmosphere after aging for 2 months. The inclusion of the PVP also improves the infiltration of FAPI perovskite into ZnO nanostructures, increases electrical conductivity and radiative recombination of the photo-generated charge carriers. These results show promising information for promoting PVP stabilized FAPI perovskites for the new generation of photovoltaic devices.

Reduced energy loss in SnO2/ZnO bilayer electron transport layer-based perovskite solar cells for achieving high efficiencies in outdoor/indoor environments

2020 ◽  
Vol 8 (33) ◽  
pp. 17163-17173 ◽  
Author(s):  
Young Wook Noh ◽  
In Su Jin ◽  
Kyeong Su Kim ◽  
Sang Hyun Park ◽  
Jae Woong Jung
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Energy Loss ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Full Potential ◽  
Indoor Environments ◽  
Key Factor

The energy loss in perovskite solar cells (PSCs) is a key factor that limits the full potential of photovoltaic performance to values below the Shockley–Queisser limit.

Compact layer free mixed-cation lead mixed-halide perovskite solar cells

2018 ◽  
Vol 54 (21) ◽  
pp. 2623-2626 ◽  
Author(s):  
Zhelu Hu ◽  
Hengyang Xiang ◽  
Mathilde Schoenauer Sebag ◽  
Laurent Billot ◽  
Lionel Aigouy ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Compact Layer ◽  
Halide Perovskite ◽  
Planar Electron

Thickness-tunable and compact FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite thin films are achieved with a large grain size up to 12 microns. They are then employed to fabricate planar electron-transport-layer-free solar cells.

scholarly journals Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2047
Author(s):  
Umme Farva ◽  
Hyeong Woo Lee ◽  
RiNa Kim ◽  
Dong-Gun Lee ◽  
Jeha Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Solar Cells ◽  
Electrical Properties ◽  
Growth Temperature ◽  
Film Growth ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Film Growth Rate

Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results confirmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL.

Perovskite solar cells with an MoS2 electron transport layer

2019 ◽  
Vol 7 (12) ◽  
pp. 7151-7158 ◽  
Author(s):  
Ranbir Singh ◽  
Anupam Giri ◽  
Monalisa Pal ◽  
Kaliannan Thiyagarajan ◽  
Junghyeok Kwak ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electron Transport ◽  
Glass Substrate ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Step Process ◽  
One Step ◽  
Fto Glass

MoS2 thin films are directly synthesized over FTO/glass substrate in a one-step process and used as an efficient electron transport layer (ETL) for perovskite solar cells (PSCs).

Low temperature solution processed indium oxide thin films with reliable photoelectrochemical stability for efficient and stable planar perovskite solar cells

2017 ◽  
Vol 5 (20) ◽  
pp. 9641-9648 ◽  
Author(s):  
Peng Chen ◽  
Xingtian Yin ◽  
Meidan Que ◽  
Xiaobin Liu ◽  
Wenxiu Que
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Indium Oxide ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Oxide Thin Films ◽  
Solution Processed ◽  
Temperature Solution

Low temperature, solution processed indium oxide thin films act as the electron transport layer in planar perovskite solar cells (PSCs), which result in high efficiency and reliable stability.

scholarly journals Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 32 ◽  
Author(s):  
Seungtae Baek ◽  
Jeong Woo Han ◽  
Devthade Vidyasagar ◽  
Hanbyeol Cho ◽  
Hwi-Heon HA ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electron Transport ◽  
Room Temperature ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer

We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.

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