scholarly journals Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 795
Author(s):  
Soumava Ghosh ◽  
Kuan-Chih Lin ◽  
Cheng-Hsun Tsai ◽  
Harshvardhan Kumar ◽  
Qimiao Chen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Collection Efficiency ◽  
Short Wave ◽  
Carrier Generation ◽  
Optical Components ◽  
Metal Semiconductor Metal ◽  
Wide Range ◽  
Short Wave Infrared ◽  
Planar Fabrication

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.

scholarly journals Polarimetry for Photonic Integrated Circuits

2019 ◽  
Vol 9 (15) ◽  
pp. 2987
Author(s):  
Moritz Baier ◽  
Axel Schoenau ◽  
Francisco M. Soares ◽  
Martin Schell
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
The State ◽  
Polarization Dependence ◽  
Complete Picture ◽  
Wide Range ◽  
State Of Polarization ◽  
Matrix Yielding ◽  
Polarization Of Light

Photonic integrated circuits (PICs) play a key role in a wide range of applications. Very often, the performance of PICs depends strongly on the state of polarization of light. Classically, this is regarded as undesirable, but more and more applications emerge that make explicit use of polarization dependence. In either case, the characterization of the polarization properties of a PIC can be a nontrivial task. We present a way of characterizing PICs in terms of their full Müller matrix, yielding a complete picture of their polarization properties. The approach is demonstrated by carrying out measurements of fabricated PICs.

scholarly journals Hyperspectral imaging and characterization of allergic contact dermatitis in the short‐wave infrared

2020 ◽  
Vol 13 (9) ◽  
Author(s):  
Tommy Du ◽  
Deependra K. Mishra ◽  
Leonid Shmuylovich ◽  
Andy Yu ◽  
Helena Hurbon ◽  
...  
Keyword(s):  
Contact Dermatitis ◽  
Allergic Contact Dermatitis ◽  
Hyperspectral Imaging ◽  
Short Wave ◽  
Short Wave Infrared ◽  
Allergic Contact

scholarly journals Artificial Intelligence for Pigment Classification Task in the Short-Wave Infrared Range

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6150
Author(s):  
Emeline Pouyet ◽  
Tsveta Miteva ◽  
Neda Rohani ◽  
Laurence de Viguerie
Keyword(s):  
Treatment Approach ◽  
Short Wave ◽  
Data Cube ◽  
Infrared Range ◽  
Intrinsic Complexity ◽  
Short Wave Infrared ◽  
Absorption Features ◽  
Reference Samples ◽  
Historical Samples

Hyperspectral reflectance imaging in the short-wave infrared range (SWIR, “extended NIR”, ca. 1000 to 2500 nm) has proven to provide enhanced characterization of paint materials. However, the interpretation of the results remains challenging due to the intrinsic complexity of the SWIR spectra, presenting both broad and narrow absorption features with possible overlaps. To cope with the high dimensionality and spectral complexity of such datasets acquired in the SWIR domain, one data treatment approach is tested, inspired by innovative development in the cultural heritage field: the use of a pigment spectral database (extracted from model and historical samples) combined with a deep neural network (DNN). This approach allows for multi-label pigment classification within each pixel of the data cube. Conventional Spectral Angle Mapping and DNN results obtained on both pigment reference samples and a Buddhist painting (thangka) are discussed.

scholarly journals Reflectância espectral e caracterização dos plútons da porção Oeste do Batólito Ipojuca-Atalaia, Provincia Borborema, Nordeste do Brasil / Spectral reflectance and characterization of the plutons of the West portion of the Ipojuca-Atalaia Batolith, Borborema province, Northeast of Brazil

2021 ◽  
Vol 5 (5) ◽  
pp. 1971-1989
Author(s):  
Sanmy Silveira Lima ◽  
Gabriela Menezes Almeida
Keyword(s):  
Spectral Reflectance ◽  
Near Infrared ◽  
Short Wave ◽  
The West ◽  
Borborema Province ◽  
Short Wave Infrared

O uso da reflectância como meio de caracterização de alvos naturais apresentou significativos avanços na última década. A área de estudo está localizada na Zona da Mata e é caracterizada por altos índices pluviométricos, indicando forte intemperismo e erosão. Os granitóides que compõem essa região, são formados em sua maioria por quartzo, K-feldspato, plagioclásio e biotita. Esses minerais tendem a apresentar comportamento espectral predominantemente transparente no intervalo entre 400 e 2500 nm. As medidas de reflectância foram feitas em 9 amostras obtidas com de sonda de contato portadora de lâmpada halógena com o intuito de capitas as faixas do VNIR (Visible-Near Infrared) e SWIR (Short Wave Infrared). O objetivo deste artigo foi caracterizar os principais plútons da área estudada através da análise mesoscópica de amostras e da curva de reflectância para compreender a influência da composição mineralógica e dos processos físico-químicos atuantes na porção Oeste do Batólito Ipojuca-Atalaia.  

scholarly journals Circuit Techniques in GaN Technology for High-Temperature Environments

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 42
Author(s):  
Ahmad Hassan ◽  
Jean-Paul Noël ◽  
Yvon Savaria ◽  
Mohamad Sawan
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
National Research Council ◽  
Logic Gates ◽  
Voltage Reference ◽  
Flip Flop ◽  
Wide Range ◽  
Circuit Techniques ◽  
First Time

As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suitable candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology available from the National Research Council of Canada to serve RF applications. However, this technology has the potential to boost HT electronics to higher ranges of operating temperatures and to higher levels of integration. This paper summarizes the outcome of five years of research investigating the implementation of GaN500-based circuits to support HT applications such as aerospace missions and deep earth drilling. More than 15 integrated circuits were implemented and tested. We performed the HT characterization of passive elements integrated in GaN500 including resistors, capacitors, and inductors up to 600 °C. Moreover, we developed for the first time several digital circuits based on GaN500 technology, including logic gates (NOT, NAND, NOR), ring oscillators, D Flip-Flop, Delay circuits, and voltage reference circuits. The tested circuits are fabricated on a 4 mm × 4 mm chip to validate their functionality over a wide range of temperatures. The logic gates show functionality at HT over 400 °C, while the voltage reference circuits remain stable up to 550 °C.

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