scholarly journals Analysis of Frequency Drift of Silicon MEMS Resonator with Temperature

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 26
Author(s):  
Bo Jiang ◽  
Shenhu Huang ◽  
Jing Zhang ◽  
Yan Su
Keyword(s):  
Temperature Coefficient ◽  
Intrinsic Property ◽  
Micro Electro Mechanical System ◽  
Frequency Drift ◽  
Distribution Law ◽  
Sensors And Actuators ◽  
Temperature Range ◽  
Thermal Expansion Coefficients ◽  
Mems Resonator ◽  
Mems Resonators

High-quality-factor Micro-Electro-Mechanical System (MEMS) resonators have been widely used in sensors and actuators to obtain great mechanical sensitivity. The frequency drift of resonator with temperature is a problem encountered practically. The paper focuses on the resonator frequency distribution law in the temperature range of—40 to 60 °C. The four-layer models were established to analyze thermal stress caused by temperature due to the mismatch of thermal expansion coefficients. The temperature variation leads to the transformation of stress, which leads to the shift of resonance frequency. The paper analyzes the influence of hard and soft adhesive package on the temperature coefficient of frequency. The resonant accelerometer was employed for the frequency measurements in the paper. In experiments, three types of adhesive dispensing patterns were implemented. The results are consistent with the simulation well. The optimal packaging method achieves −24.1 ppm/°C to −30.2 ppm/°C temperature coefficient of the resonator in the whole temperature range, close to the intrinsic property of silicon (−31 ppm).

2:1 MUX and OR Logic Functions Using Triple Partial Electrodes: Toward Cascadable MEMS Logic Devices

2020 ◽  
Author(s):  
Sherif A. Tella ◽  
Mohammad I. Younis
Keyword(s):  
Energy Efficient ◽  
Vibrational Mode ◽  
Sensors And Actuators ◽  
Ultra Low Power ◽  
Logic Devices ◽  
Energy Efficient Computing ◽  
Mems Resonator ◽  
Mems Resonators ◽  
Logic Functions ◽  
Computing Machines

Abstract In the era of IoT and smarter sensors and actuators, MEMS resonators are actively being explored for ultra-low-power computing devices due to their simplicity and potential toward energy-efficient computing machines. However, the realization of complex logic functions through the cascadability of MEMS resonator logic devices has introduced new challenges that require both the logic input and logic output signals to be based on AC signals at the same frequency. Toward these challenges, this study demonstrates 2:1 MUX function and OR gate with improved energy efficiency based on activation and deactivation of the third vibrational mode of an arch microbeam resonator with a pair of three partial electrodes.

Design of a MEMS Resonant Wind Sensor on Airplane Wing

2013 ◽  
Vol 562-565 ◽  
pp. 436-440
Author(s):  
Chao Wei Si ◽  
Guo Wei Han ◽  
Jin Ning ◽  
Wei Wei Zhong ◽  
Fu Hua Yang
Keyword(s):  
High Vacuum ◽  
Pressure Change ◽  
Wind Pressure ◽  
Damping Factor ◽  
Deep Reactive Ion Etching ◽  
Mems Resonator ◽  
Mems Resonators ◽  
Element Simulation ◽  
Airplane Wing ◽  
Soi Substrates

A new kind of wind sensor made up of MEMS resonators is designed in the paper capable of sensing the lift, the resistance and the turbulence of airplane wings by mounting on the surface. The designed wind sensor is made up of four MEMS wind pressure gauges fixed around a square wind resistance block which used to block the wind to change the wind pressure on the surface, and the change of wind pressure is detected by MEMS wind pressure gauges to reveal the air condition on the surface of the airplane wings. As known, a MEMS resonator is a second-order resonant system whose damping factor is mainly dependent on the air pressure, and the characteristic is often used to detecting the airtightness of a sealed chamber for the damping factor is sensitive under high vacuum, while a MEMS resonator with the damping factor sensitive at atmospheric pressure is designed in this paper for sensing wind pressure change, and the MEMS resonator is manufactured on SOI substrates with deep reactive ion etching technology. Also relations between the wind pressure change and the wind speed around a block at atmosphere is revealed by finite element simulation. Compared to traditional wind sensors such as anemometers and Venturi tubes, the designed MEMS wind sensor with a very small size is suitable to mount on different zones of a wing with a large amount to monitor the air condition and have less influence on air flow.

Dynamic Indentation of Copper and an Aluminium Alloy with a Conical Projectile at Elevated Temperatures

1965 ◽  
Vol 180 (1) ◽  
pp. 285-294 ◽  
Author(s):  
F. U. Mahtab ◽  
W. Johnson ◽  
R. A. C. Slater
Keyword(s):  
Strain Rate ◽  
Aluminium Alloy ◽  
Temperature Coefficient ◽  
Elevated Temperatures ◽  
Dynamic Pressure ◽  
Pure Metal ◽  
Dynamic Indentation ◽  
Strain Rate Effects ◽  
Dynamic Temperature ◽  
Temperature Range

The dynamic indentation of copper (B.S. 1433) and an aluminium alloy (B.S. 1476 HE 10) has been investigated, using cylindro-conical projectiles fired from an air-actuated gun. The experiments were performed with impact velocities varying between 1000 and 2500 in/s and at elevated temperatures up to 600°C for the copper and 550°C for the aluminium alloy. The magnitude of the corresponding range of mean strain rate was then 103-104/s, depending upon the material; impact velocity and temperature (see Appendix I). For the range of impact velocities investigated no consequential transition temperature † was encountered. The dynamic temperature coefficient† thus remained constant throughout the test temperature range for each material. This dynamic temperature coefficient was found to be equal to the static temperature coefficient corresponding to the sub-transitional temperature range for the respective materials. The mean effective dynamic indentation pressure is shown to decrease with temperature but the ratio of this dynamic pressure to the static indentation pressure increases with temperature. Strain rate effects for both materials were negligible for sub-transitional temperatures but become important at super-transitional temperatures. It was observed that the parameters on which the strain rate effect depends are in some way related to the absolute melting point of a pure metal.

ROM of Superharmonic Resonance of Second Order of Electrostatically Actuated MEMS Resonators

2015 ◽  
Author(s):  
Dumitru I. Caruntu ◽  
Christian Reyes
Keyword(s):  
Second Order ◽  
Voltage Response ◽  
Order Model ◽  
Reduced Order ◽  
Superharmonic Resonance ◽  
Electrostatically Actuated ◽  
Mems Resonator ◽  
Mems Resonators ◽  
Method Effects ◽  
Ground Plate

This paper deals with the voltage-amplitude response (or voltage response) of superharmonic resonance of second order of MEMS resonator sensors under electrostatic actuation. The system consists of a MEMS flexible cantilever above a parallel ground plate. The AC frequency of actuation is near one fourth the natural frequency. The voltage response of the superharmonic resonance of second order of the structure is investigated using the Reduced Order Model (ROM) method. Effects of voltage and damping voltage response are reported.

Dynamic behaviours of the Double-end tuning fork based comb-driven microelectromechanical resonators for modulating the magnetic flux synchronously

2021 ◽  
Author(s):  
Zhenxi Liu ◽  
Jiamin Chen ◽  
Wuhao Yang ◽  
Tianyi Zheng ◽  
Qifeng Jiao ◽  
...  
Keyword(s):  
Detection Limit ◽  
Magnetic Flux ◽  
Resonance Frequency ◽  
Tuning Fork ◽  
Paper Making ◽  
Initial Space ◽  
Mems Resonator ◽  
Mems Resonators ◽  
Mems Fabrication ◽  
First Time

Abstract MEMS resonators have been widely used in the magneto-resistive (MR) sensor for modulating the magnetic flux to enhance the detection limit. However, the manufacturing tolerances in MEMS fabrication processes make it challenging to fabricate the identical resonators with the same vibration frequency, which greatly decreases the detection limit of the MR sensor. To synchronize the MEMS resonators and improve the performance of the MR sensor, the double end tuning fork (DETF) based comb-driven MEMS resonators is proposed in this paper, making the system operate at the out-of-phase mode to complete the synchronization. The dynamic behaviour of the resonators is investigated through theoretical analysis, numerical solution based on MATLAB code and Simulink, and experimental verification. The results show that the transverse capacitances in the comb will significantly affect the resonance frequency due to the second-order electrostatic spring constant. It is the first time to observe the phenomenon that the resonant frequency increases with the increase of the bias, and it can also decrease with increasing the bias through adjusting the initial space between the fixed finger and the moving mass, they are different from the model about spring softening and spring hardening. Besides, the proposed DETF-based comb-driven resonators can suppress the in-phase and out-of-phase mode through adjusting the driving and sensing ports, and sensing method, meanwhile make the magnetic flux modulation fully synchronized, and maximize the modulation efficiency, and minimize the detection limit. These characteristics are appropriate for the MR sensor, even other devices that need to adjust the resonance frequency and vibration amplitude. Furthermore, the model and the design can also be extended to characteristic the single end tuning fork (SETF) based MEMS resonator and other MEMS-based MR sensors.

Simulation and Analysis of the Temperature-Compensated FBAR

2015 ◽  
Vol 719-720 ◽  
pp. 490-495
Author(s):  
Bin Zhou ◽  
Yang Gao ◽  
Yi He ◽  
Wan Jing He
Keyword(s):  
Temperature Coefficient ◽  
Electromechanical Coupling ◽  
Positive Temperature Coefficient ◽  
Frequency Drift ◽  
Center Frequency ◽  
Positive Temperature ◽  
Analysis Software ◽  
Element Analysis ◽  
Simulated Temperature ◽  
Temperature Coefficient Of Frequency

The property of temperature-frequency drift has an effect on the passband ripples, center frequency and insertion loss of FBAR filters, reducing the reliability of its electrical application. A temperature-frequency drift simulation of a typical Mo/AlN/Mo FBAR is achieved by means of finite element analysis software ANSYS, the simulated temperature coefficient of frequency is about-35ppm/°C within the temperature range of-50°C~150°C. By adding a compensated layer with positive temperature coefficient in the FBAR structure, the effects of the compensated layer thickness on temperature-frequency drift, resonant frequency and electromechanical coupling are analyzed. The simulated temperature coefficient of frequency of designed temperature compensated FBAR, which composed of Mo/AlN/SiO2/Mo, is about 0.8ppm/°C, the property of temperature-frequency drift is effectively improved.

Thermal Expansion of SrZr4-xTix(PO4)6 Ceramics

2018 ◽  
Vol 281 ◽  
pp. 169-174
Author(s):  
Yang Wang ◽  
Yuan Yuan Song ◽  
Yuan Yuan Zhou ◽  
Lu Ping Yang ◽  
Fu Tian Liu
Keyword(s):  
Thermal Expansion ◽  
Relative Density ◽  
Thermophysical Properties ◽  
Sintering Temperature ◽  
Temperature Range ◽  
Thermal Expansion Coefficients ◽  
High Relative Density ◽  
Low Thermal Expansion ◽  
Expansion Coefficients

Low thermal expansion ceramics have been widely applied in multiple fields. In this paper, a series of low thermal expansion ceramics SrZr4-xTix(PO4)6 was prepared and characterized. The SrZr4-xTix(PO4)6 ceramics could be well sintered in the temperature range of 1400~1500 °C. The effect of the addition of Ti substituting Zr and the sintering temperature was studied. The Ceramic with x =0.1 sintered at 1450 °C, the SrZr4-xTix(PO4)6 had a high relative density. The thermal expansion coefficients were about 3.301×10-6 °C-1. It was demonstrated that the microstructure of the SrZr4-xTix(PO4)6 could be altered by adding varying amount of Ti to tailor the thermophysical properties of the material.

Controlling Crystallization Structures in Thin Si Film for Improving Characteristics of MEMS Resonators

2012 ◽  
Vol 1427 ◽  
Author(s):  
Shinya Kumagai ◽  
Hiromu Murase ◽  
Takashi Tomikawa ◽  
Syohei Ogawa ◽  
Ichiro Yamashita ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Domain Size ◽  
Q Factor ◽  
Random Orientation ◽  
Mems Resonator ◽  
Mems Resonators ◽  
Small Grains ◽  
Thin Polycrystalline ◽  
Lateral Crystallization ◽  
Conventional Annealing

ABSTRACTAn approach to control the tensile stress and Q factor of thin Si film beams in MEMS resonators was investigated. Metal-induced lateral crystallization (MILC) using Ni nanoparticles that were synthesized within a cage-shaped protein, apoferritin, was applied to a thin morphous Si film for making a MEMS resonator with thin film beams. The MILC produced a thin polycrystalline Si (poly-Si) film with large crystallized domain (50-60 μm) with nearly the same crystalline orientation, whereas the poly-Si film obtained by conventional annealing (without MILC) consisted of small grains (less than 1 μm) with random orientation. The MEMS resonator with a beam made of poly-Si film by MILC was fabricated. The large domain size and the improved crystallinity increased the tensile stress, and resulted in 20% increase in Q factor in the resonant characteristics.

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