scholarly journals Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 98
Author(s):  
Eugeny Ryndin ◽  
Natalia Andreeva ◽  
Victor Luchinin
Keyword(s):  
Metal Oxide ◽  
Equation System ◽  
Software Implementation ◽  
Compact Model ◽  
Metal Oxide Films ◽  
Bipolar Switching ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Good Agreement

The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.

scholarly journals Temperature dependent analytical model for submicron GaAs-MESFET

2021 ◽  
Vol 10 (3) ◽  
pp. 1271-1282
Author(s):  
Mohamed Djouder ◽  
Arezki Benfdila ◽  
Ahcene Lakhlef
Keyword(s):  
Analytical Model ◽  
Temperature Dependent ◽  
Gaas Mesfet ◽  
Voltage Variation ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Simulation Results ◽  
Parameter Values ◽  
Good Agreement

MESFET are used in circuitsof gigahertz frequencies as they are based on gallium arsenide (GaAs) having electron mobility six times higher than that of silicon. An analytical model simulating different device current-voltage characteristics, i.e., output conductance and output transconductance of a 0.3μm gate MESFET with temperature dependence is proposed. The model is validated by comparing the results of the proposed model and those of the numerical simulation. The parameter values are computed using an intrinsic MESFET of two-dimensional geometry. In this work, the distribution of different output loads for varied applied voltages is considered. Simulation results obtainedunder temperature variation effectsfor load distribution and applied driven voltage variation are considered. The RMS and average errors between the different models and GaAs MESFET simulations are calculated to evidence the proposed model accuracy. This was demonstrated by a good agreement between the proposed model and the simulation results, which are found in good agreement. The simulation results obtained under temperature variations were discussed and found to complement those obtained in the literature. This clarifies the relevance of the suggested model analytical.

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

2011 ◽  
Vol 102 (4) ◽  
pp. 827-834 ◽  
Author(s):  
Min Hwan Lee ◽  
Kyung Min Kim ◽  
Seul Ji Song ◽  
Sang Ho Rha ◽  
Jun Yeong Seok ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Scanning Probe Microscopy ◽  
Oxide Films ◽  
Transition Metal Oxide ◽  
Scanning Probe ◽  
Metal Oxide Films ◽  
Probe Microscopy ◽  
Bipolar Switching ◽  
Surface Redox

scholarly journals IGBTs working in the NDR region of their I-V characteristics

2015 ◽  
Vol 28 (1) ◽  
pp. 1-15 ◽  
Author(s):  
Riteshkumar Bhojani ◽  
Thomas Basler ◽  
Josef Lutz ◽  
Roland Jakob
Keyword(s):  
Short Circuit ◽  
Forward Bias ◽  
Destruction Mechanism ◽  
Operating Region ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Thermal Simulations ◽  
Detailed Work ◽  
Good Agreement

This paper demonstrates the detailed work on high voltage IGBTs using simulations and experiments. The current-voltage characteristics were measured up to the break through point in forward bias operating region at two different temperatures for a 50 A/4.5 kV rated IGBT chip. The experimentally measured data were in good agreement with the simulation results. It was also shown that the IGBTs are able to clamp high collector-emitter voltages although a low gate turn-off resistor in combination with a high parasitic inductance was applied. Uniform 4-cell and 8-cell IGBT models were created into the TCAD device simulator to conduct an investigation. An engendered filamentation behaviour during short-circuit turn-off was briefly reviewed using isothermal as well as thermal simulations and semiconductor approaches for development of filaments. The current filament inside the active cells of the IGBT is considered as one of the possible destruction mechanism for the device failure.

FIELD AND THERMIONIC FIELD TRANSPORT IN ALUMINIUM GALLIUM ARSENIDE HETEROJUNCTION BARRIERS

2007 ◽  
Vol 17 (01) ◽  
pp. 39-42
Author(s):  
D. V. MORGAN ◽  
A. PORCH
Keyword(s):  
Experimental Data ◽  
Functional Dependence ◽  
Aluminium Gallium Arsenide ◽  
Simplified Model ◽  
Semiconductor Interfaces ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Compositional Grading ◽  
Theory And Experiment ◽  
Good Agreement

A simplified model of electron transport by tunneling within a GaAs/AlGaAs/GaAs heterojunction is developed. The model is applied specifically to tunneling through a triangular barrier formed by the compositional grading of the AlGaAs region, but can in principle be extended to a range of barrier geometries encountered at heterojunction or metal/semiconductor interfaces. The experimental data for the current-voltage characteristics obtained for a range of temperatures from 77 K to 273 K are used to test the functional dependence obtained from calculations. Good agreement has been obtained between theory and experiment, thus confirming the usefulness of the simple model for device evaluation.

Investigations of Electrostatic and Ionized Fields Analysis for Dual-Electrode System

2016 ◽  
Vol 3 (1) ◽  
pp. 80
Author(s):  
Mohamed A. Abouelatta ◽  
Abdelhadi R. Salama ◽  
A. M. Omar ◽  
S. A. Ward
Keyword(s):  
Electric Field ◽  
Electrostatic Field ◽  
Simulation Method ◽  
Electrode System ◽  
Charge Simulation Method ◽  
Density Profiles ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ion Current Density ◽  
Good Agreement

<p>The paper presents the computation and measurement of electric field, in both electrostatic as well as ionized case, for dual electrode system intended for electrostatic applications. The dual electrode system consists of an ionizing and non-ionizing electrode have the same voltage and facing a grounded collecting plate. The charge simulation method (CSM) coupled with genetic algorithms (GAs) and method of characteristic (MOC) is applied to compute the electrostatic field and the ionized field respectively. The influence of dual system parameters such as ionized wire diameter and inter electrode distances on the profile of the electrostatic field on the collecting plate and on the surface of the ionizing wire has been studied. The measurements of the ionized electric field, current-voltage characteristics and ion current density profiles are implemented using the technique of the linear biased probe. An experimental setup is constructed to model the present electrode arrangement. The measurements are carried out for ionized wire of diameter 0.25 and 0.5mm. The computed results are found to be in good agreement with experiments.</p>

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