scholarly journals Chemical Solution Deposition of Ordered 2D Arrays of Room-Temperature Ferrimagnetic Cobalt Ferrite Nanodots

Polymers ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 1598 ◽  
Author(s):  
Jin Xu ◽  
Justin Varghese ◽  
Giuseppe Portale ◽  
Alessandro Longo ◽  
Jamo Momand ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Cobalt Ferrite ◽  
Magnetic Nanostructures ◽  
Memory Storage ◽  
Blocking Temperature ◽  
Chemical Solution ◽  
Solution Deposition ◽  
X Ray ◽  
2D Arrays

Over the past decades, the development of nano-scale electronic devices and high-density memory storage media has raised the demand for low-cost fabrication methods of two-dimensional (2D) arrays of magnetic nanostructures. Here, we present a chemical solution deposition methodology to produce 2D arrays of cobalt ferrite (CFO) nanodots on Si substrates. Using thin films of four different self-assembled block copolymers as templates, ordered arrays of nanodots with four different characteristic dimensions were fabricated. The dot sizes and their long-range arrangement were studied with scanning electron microscopy (SEM) and grazing incident small-angle X-ray scattering (GISAXS). The structural evolution during UV/ozone treatment and the following thermal annealing was investigated through monitoring the atomic arrangement with X-ray absorption fine structure spectroscopy (EXAFS) and checking the morphology at each preparation step. The preparation method presented here obtains array types that exhibit thicknesses less than 10 nm and blocking temperatures above room temperature (e.g., 312 K for 20 nm diameter dots). Control over the average dot size allows observing an increase of the blocking temperature with increasing dot diameter. The nanodots present promising properties for room temperature data storage, especially if a better control over their size distribution will be achieved in the future.

PREPARATION AND CHARACTERISTICS OF Sm-DOPED Bi2Ti2O7 THIN FILMS

2007 ◽  
Vol 14 (01) ◽  
pp. 147-150 ◽  
Author(s):  
DONGMEI YANG ◽  
CHANGHONG YANG ◽  
CHUNXUE YUAN ◽  
XIN YIN ◽  
JIANRU HAN
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dielectric Constant And Loss

Crack-free Sm-doped Bi 2 Ti 2 O 7( Sm : Bi 2 Ti 2 O 7) thin films with a strong (111) orientation have been prepared on p-Si (111) by chemical solution deposition (CSD). The structural properties and crystallizations were studied by X-ray diffraction. The surface morphology and quality were examined using atomic force microscopy (AFM). The dielectric constant and loss factor at different frequencies were also evaluated at room temperature. Their insulation was studied, too. The films exhibit better insulating property than does the pure Bi 2 Ti 2 O 7.

Surface Plasmon Mediated Chemical Solution Deposition of Gold Nanoparticles on a Nanostructured Silver Surface at Room Temperature

2012 ◽  
Vol 135 (1) ◽  
pp. 38-41 ◽  
Author(s):  
Jingjing Qiu ◽  
Yung-Chien Wu ◽  
Yi-Chung Wang ◽  
Mark H. Engelhard ◽  
Lisa McElwee-White ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Surface Plasmon ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Chemical Solution ◽  
Silver Surface ◽  
Solution Deposition

Annealing effect on in-plane alignment and surface morphology of epitaxial Bi4Ti3O12 thin films prepared by the chemical solution deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2519-2525 ◽  
Author(s):  
K. Hwang ◽  
Y. Park
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Chemical Solution Deposition ◽  
Three Dimensional ◽  
Annealing Effect ◽  
Chemical Solution ◽  
Epitaxial Relationship ◽  
Solution Deposition ◽  
X Ray ◽  
Lower Temperature

Bi4Ti3O12 thin films were grown epitaxially on SrTiO3(100) substrates by chemical solution deposition using metal naphthenates as starting materials. Homogeneous Bi–Ti solution with toluene was spin-coated onto the substrates and pyrolyzed at 500 °C for 10 min in air. Highly c-axis-oriented Bi4Ti3O12 thin films were crystallized by annealing pyrolyzed films at ≥650 °C. The x-ray pole-figure analysis indicated that the Bi4Ti3O12 thin films have an epitaxial relationship with the SrTiO3(100) substrates. The surface morphology of the films annealed at lower temperature, i.e., 650 °C, exhibited flat and smooth surfaces, while films annealed at higher temperatures, i.e., 750 and 800 °C, were characterized by three-dimensional outgrowth.

scholarly journals Chemical Solution Deposition of YBCO Films with Gd Excess

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 860
Author(s):  
Valentina Pinto ◽  
Angelo Vannozzi ◽  
Achille Angrisani Armenio ◽  
Francesco Rizzo ◽  
Andrea Masi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Solution Deposition ◽  
Zero Field ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Decomposition Approach ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Metal Organic

Chemical solution deposition of Gd-doped YBCO, Y1GdyBa2Cu3O7−δ, (YBCO-Gd), film was carried out following the metal-organic decomposition approach and in situ route. Two dopant concentrations, 5 and 10 mol %, were evaluated. The morphology and crystalline structure of the superconductor films were deeply investigated. In general, a homogeneous and well c-axis oriented film was observed by using scanning and transmission electron microscopy (SEM and TEM) and X-ray diffraction. However, compared to pure YBCO, YBCO-Gd samples showed an increased stacking faults concentration, as recognized by TEM. X-ray photoelectron spectroscopy allowed studying the Gd distribution in the films and gathered information about the Gd electronic environment. Superconducting properties were evaluated at different temperatures, magnetic field directions, and intensities. Higher zero-field critical current densities were measured with respect to undoped samples in the temperature range from 10 to 77 K with both Gd concentrations (i.e., 28, 27, and 13 MA·cm−2, respectively, for YBCO-Gd 5%, YBCO-Gd 10%, and undoped YBCO at 10 K in self field condition). At low temperatures, this improvement was maintained up to 12 T, confirming the efficacy of Gd addition for the enhancement of transport properties of YBCO film.

(Pb, Sm)TiO3 THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING A Bi2Ti2O7 BUFFER LAYER

2004 ◽  
Vol 11 (02) ◽  
pp. 211-215
Author(s):  
CHANGHONG YANG ◽  
ZHUO WANG ◽  
XIUFENG CHENG ◽  
HONGXIA LI ◽  
JIANRU HAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Hysteresis Curve ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Atomic Force ◽  
Clockwise Hysteresis

A thin-film bilayer structure consisting of polycrystalline Pb 0.85 Sm 0.1 TiO 3 and preferentially (111)-oriented Bi 2 Ti 2 O 7 were prepared using the chemical solution deposition technique. Thin films were deposited by spin-coating. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied by using an atomic force microscope. The films exhibit a good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 3.5 V. The accumulation capacitance and dielectric loss decrease with the increased annealing temperature. The ( Pb, Sm ) TiO 3/ Bi 2 Ti 2 O 7 films in the "on" and "off" states are relatively stable.

Synthesis of Oriented BiFeO3 Thin Films by Chemical Solution Deposition: Phase, Texture, and Microstructural Development

2005 ◽  
Vol 20 (8) ◽  
pp. 2127-2139 ◽  
Author(s):  
F. Tyholdt ◽  
S. Jørgensen ◽  
H. Fjellvåg ◽  
A.E. Gunnæs
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Chemical Solution Deposition ◽  
Microstructural Development ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Solution Deposition ◽  
X Ray ◽  
Glass Substrates

Textured, thin films of BiFeO3 (∼120 nm thickness) were synthesized by chemical solution deposition from a mixture of iron- and bismuth- 2-methoxyethoxides on Si(100)/SiO2/TiO2/Pt substrates. The use of alkoxides ensured good homogeneity and a low degree of organics that further facilitated low crystallization temperatures. Crystalline films were according to x-ray diffraction already obtained at 480 °C. Precursor characteristics were investigated using thermogravimetry and differential scanning calorimetry, whereas phase purity, microstructure and film topography were examined by x-ray diffraction, transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. A small (10%) Bi excess was found necessary to obtain dense, pore-free films. Such additions also prevented decomposition of BiFeO3 at high temperatures. The observed (012) texture is believed to originate from the growth mechanism as no relation to the substrate is found. This is also confirmed by observing (012) texture for films on glass substrates.

scholarly journals Oriented hexagonal ferrite thin films prepared by chemical solution deposition

2014 ◽  
Vol 70 (a1) ◽  
pp. C725-C725
Author(s):  
Josef Bursik ◽  
Radomir Kuzel ◽  
Karel Knizek ◽  
Ivo Drbohlav
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Sol Gel ◽  
Hexagonal Ferrite ◽  
Material System ◽  
Chemical Solution ◽  
Solution Deposition

Hexagonal ferrites (M, Y, Z-type) represent a new diverse class of magnetoelectric (ME) multiferroics, where ME effect is driven by complex magnetic order. Integration of ME materials with standard semiconductor technology is important for ultimate realization of ME functionalities. They have the potential to display ME coupling under low magnetic field bias and at temperatures close to room temperature. Methods based on sol–gel transition offer possibility of low cost and efficient way for the evaluation of new material system. The single phase, epitaxial thin films of Y-type hexagonal ferrite has been prepared and studied. Thin films of Ba2Zn2Fe12O22(Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(111)(ST) single crystal substrates using epitaxial SrFe12O19(M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into high density of well-oriented isolated grains with expressive shape anisotropy and hexagonal habit.The vital parameters of the seed layer, i.e. thickness, substrate coverage,crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. By overcoating this seed layer, Y phase prepared under optimum deposition and heat treatment conditions presents a (001) orientation perpendicular to the substrate. Perfect parallel in-plane alignment of the hexagonal cells of SrTiO3substrate and both hexaferrite phases was proved by fast ω and φ scan measurements on sets of several diffraction planes at asymmetric orientations, and also by pole figures. The soft magnetic character and existence of pronounced magnetic anisotropy in Y films were confirmed by room temperature measurements of magnetization.

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Critical Role ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

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