scholarly journals BARIUM AND STRONTIUM FERRITS SYNTHESIZED IN THE SUN FURNACE

2020 ◽  
pp. 68-70
Author(s):  
Payzullakhanov Mukhammad Sultan Saidvalikhanovich ◽  
Xolmatov Abdurashid Abdurakhim ugli ◽  
Sobirov Muslimbek Muxsinjon ugli
Keyword(s):  
Magnetic Material ◽  
Solid Phase ◽  
Solar Furnace ◽  
Structural Defects ◽  
The Sun ◽  
Metastable Structure ◽  
Solid Phase Reactions ◽  
Concentrated Solar Radiation ◽  
Directed Change ◽  
Strontium Ferrites

Magnetic materials synthesized from a melt in a solar furnace were studied. It is shown that melts consist of crystallites of a metastable structure and an amorphous phase. This state contributes to a directed change in structurally sensitive properties (electrical, magnetic, and optical). It has been revealed that the magnetization values of barium and strontium ferrites synthesized from a melt in a stream of concentrated solar radiation increase 1.8 times in comparison with materials synthesized from solid-phase reactions. KEYWORDS- ferrites, magnetic material, solar furnace, structural defects, magnetization.

Ceramics based on aluminum titanate and additives synthesized in the big solar furnace by means of solid phase reactions and the induction method

2010 ◽  
Vol 46 (2) ◽  
pp. 125-129
Author(s):  
D. D. Gulamova ◽  
D. Uskenbaev ◽  
D. Turdiev ◽  
Yu. Mitrofanov ◽  
S. Bobokulov
Keyword(s):  
Solid Phase ◽  
Solar Furnace ◽  
Aluminum Titanate ◽  
Induction Method ◽  
Solid Phase Reactions

ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

2020 ◽  
Vol 96 (3s) ◽  
pp. 154-159
Author(s):  
Н.Н. Егоров ◽  
С.А. Голубков ◽  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
А.А. Романов ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Solid Phase ◽  
Modern Method ◽  
Structural Defects ◽  
Structural Quality ◽  
Mos Transistors ◽  
Ultrathin Layers ◽  
Heteroepitaxial Layers ◽  
Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

Solid-phase reactions limited by an energy barrier

1997 ◽  
Vol 42 (11) ◽  
pp. 1270-1274
Author(s):  
A. I. Baranov ◽  
N. I. Boyarkina ◽  
A. V. Vasil’ev
Keyword(s):  
Energy Barrier ◽  
Solid Phase ◽  
Solid Phase Reactions

Solid phase reactions between Fe thin films and Si-Ge layers on Si

2004 ◽  
Vol 461 (1) ◽  
pp. 81-85 ◽  
Author(s):  
C.H Yu ◽  
Y.L Chueh ◽  
S.W Lee ◽  
S.L Cheng ◽  
L.J Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reactions

Thermodynamical study of (CaGa2S4)x(BaGa2S4)1−x solid solutions

2021 ◽  
pp. 2150469
Author(s):  
T. G. Naghiyev ◽  
R. M. Rzayev
Keyword(s):  
Free Energy ◽  
Solid Solutions ◽  
Calculation Method ◽  
Solid Phase ◽  
Ternary Compounds ◽  
Free Energy Of Formation ◽  
Concentration Dependences ◽  
Solid Phase Reactions ◽  
Two Phases ◽  
Energy Of Formation

The solid solutions of [Formula: see text] were synthesized by solid-phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature-concentration dependences of the Gibbs free energy of formation of [Formula: see text] solid solutions from ternary compounds and phase diagrams of the CaGa2S4–BaGa2S4 were determined by a calculation method. It was revealed that continuous solid solutions are formed in these systems. The spinodal decomposition of [Formula: see text] solid solutions into two phases is predicted at ordinary temperatures.

Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers onSiO2

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4027-4033 ◽  
Author(s):  
Mayumi Takeyama ◽  
Atsushi Noya ◽  
Kouichirou Sakanishi ◽  
Hikaru Seki ◽  
Katsutaka Sasaki
Keyword(s):  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reactions
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