scholarly journals Structural Characterization of Bismuth Zinc Oxide Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 21 (10) ◽  
pp. 563-567
Author(s):  
Dong-Seok Lim ◽  
Eun-Jung Shin ◽  
Se-Hwan Lim ◽  
Seok-Kyu Han ◽  
Hyo-Sung Lee ◽  
...  
1998 ◽  
Vol 83 (5) ◽  
pp. 2458-2461 ◽  
Author(s):  
Yasuhiro Yoneda ◽  
Tooru Okabe ◽  
Kiyoshi Sakaue ◽  
Hikaru Terauchi ◽  
Hirofumi Kasatani ◽  
...  

2009 ◽  
Vol 483 (1-2) ◽  
pp. 410-413 ◽  
Author(s):  
P. Amézaga-Madrid ◽  
W. Antúnez-Flores ◽  
R.J. Sáenz-Hernández ◽  
R. Martínez-Sánchez ◽  
M. Miki-Yoshida

2002 ◽  
Vol 744 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Yuji Kawamura ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
...  

ABSTRACTZnO (ZO) and Aluminum (Al) doped ZnO (AZO) films were grown on sapphire substrate via oxygen radical assisted molecular beam epitaxy (MBE) technique. The results of XRD measurement and temperature dependent Hall measurement confirmed that the AZO films were typically highly degenerate semiconductor with good crystallinity. The resistivity of these films were closed to the theoretical lower limit. The optical properties of these films were investigated by photoluminescence (PL) spectra and absorption spectra. Strong band-edge emission was observed in the AZO films with good crystallinity in spite of high carrier concentration more than 1020 cm-3. A sift of absorption edge to higher energy side and a gradual increase of the absorption was observed for the AZO film.


2003 ◽  
Vol 78 (3) ◽  
pp. 840-846 ◽  
Author(s):  
F Cruz-Gandarilla ◽  
Arturo Morales-Acevedo ◽  
O Vigil ◽  
M Hesiquio-Garduño ◽  
L Vaillant ◽  
...  

2002 ◽  
Author(s):  
Hongwei Liang ◽  
Youming Lu ◽  
De Z. Shen ◽  
Yichun Liu ◽  
B. H. Li ◽  
...  

2014 ◽  
Author(s):  
L. M. Trinca ◽  
A. C. Galca ◽  
V. Stancu ◽  
C. Chirila ◽  
L. Pintilie

2003 ◽  
Vol 248 ◽  
pp. 91-94 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Yuji Kawamura ◽  
Takashi Kuroda ◽  
Naoki Ohashi ◽  
Yutaka Adachi ◽  
...  

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