Growth of zinc oxide thin films on Si (400) by plasma-assisted molecular beam epitaxy

2002 ◽  
Author(s):  
Hongwei Liang ◽  
Youming Lu ◽  
De Z. Shen ◽  
Yichun Liu ◽  
B. H. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxide Thin Films

Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Yuji Kawamura ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge Emission ◽  
Oxide Thin Films ◽  
Good Crystallinity ◽  
Aluminum Doped Zinc Oxide ◽  
High Carrier

ABSTRACTZnO (ZO) and Aluminum (Al) doped ZnO (AZO) films were grown on sapphire substrate via oxygen radical assisted molecular beam epitaxy (MBE) technique. The results of XRD measurement and temperature dependent Hall measurement confirmed that the AZO films were typically highly degenerate semiconductor with good crystallinity. The resistivity of these films were closed to the theoretical lower limit. The optical properties of these films were investigated by photoluminescence (PL) spectra and absorption spectra. Strong band-edge emission was observed in the AZO films with good crystallinity in spite of high carrier concentration more than 1020 cm-3. A sift of absorption edge to higher energy side and a gradual increase of the absorption was observed for the AZO film.

scholarly journals Structural Characterization of Bismuth Zinc Oxide Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 21 (10) ◽  
pp. 563-567
Author(s):  
Dong-Seok Lim ◽  
Eun-Jung Shin ◽  
Se-Hwan Lim ◽  
Seok-Kyu Han ◽  
Hyo-Sung Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Oxide Thin Films

Optical Properties of Heavily Aluminum-Doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy

2003 ◽  
Vol 248 ◽  
pp. 91-94 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Yuji Kawamura ◽  
Takashi Kuroda ◽  
Naoki Ohashi ◽  
Yutaka Adachi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide

Molecular beam epitaxy of oxide thin films using mass-separated low-energy O+ beams

1994 ◽  
pp. 601-604
Author(s):  
Ryusuke Kita ◽  
Kenichi Kawaguchi ◽  
Takashi Hase ◽  
Takeshi Koga ◽  
Rittaporn Itti ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Oxide Thin Films

scholarly journals Growth of Magnesium Oxide Thin Films Using Molecular Beam Epitaxy

2017 ◽  
Vol 13 ◽  
pp. 347-350 ◽  
Author(s):  
S. Ali ◽  
◽  
S. Qaseem ◽  
S. Ali ◽  
M. Naeem
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Magnesium Oxide ◽  
Molecular Beam ◽  
Oxide Thin Films

Enhancement of room-temperature ferromagnetism in manganese oxide thin films grown on Nb:SrTiO3 substrates

2014 ◽  
Vol 28 (20) ◽  
pp. 1450162
Author(s):  
P. Hu ◽  
S. X. Wu ◽  
S. W. Li
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Manganese Oxide ◽  
Growth Process ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Experimental Results ◽  
Oxide Thin Films

In this paper, α- Mn 2 O 3 thin films were fabricated by plasma-assisted molecular beam epitaxy on SrTiO 3 and Nb : SrTiO 3, respectively. The grown samples showed room temperature ferromagnetism (RFM) properties. All the experimental results manifested that the RFM properties in undoped thin films were induced by oxygen vacancies formed during the growth process. Even more, the ferromagnetism of thin films grown on Nb : SrTiO 3 were enhanced, and these results confirmed the fact that oxygen vacancies induced ferromagnetism. That is to say, more oxygen vacancies result the more unpaired electrons induced prominent abnormal spin causing ferromagnetism.

Preparation of Zinc Oxide Thin Films by Reactive Pulsed Arc Molecular Beam Deposition†

2007 ◽  
Vol 111 (48) ◽  
pp. 17700-17704 ◽  
Author(s):  
Chi-Tung Chiang ◽  
Robert L. DeLeon ◽  
James F. Garvey
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Molecular Beam ◽  
Oxide Thin Films ◽  
Molecular Beam Deposition ◽  
Pulsed Arc ◽  
Beam Deposition
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