Effect of CuTcPc Water Solution Surface Treatment on The Brightness and Current Efficiency of Organic Light Emitting Devices

2012 ◽  
Vol 33 (1) ◽  
pp. 88-92
Author(s):  
孔超 KONG Chao ◽  
徐征 XU Zheng ◽  
赵谡玲 ZHAO Su-ling ◽  
张福俊 ZHANG Fu-jun ◽  
闫光 YAN Guang ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Current Efficiency ◽  
Water Solution ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Solution Surface ◽  
Organic Light Emitting Devices

Dramatic efficiency improvement in single-layer orange phosphorescent organic light-emitting devices with suppressed efficiency roll-off

RSC Advances ◽  
2016 ◽  
Vol 6 (60) ◽  
pp. 55017-55021 ◽  
Author(s):  
Liangmei Zuo ◽  
Guangguang Han ◽  
Ren Sheng ◽  
Kaiwen Xue ◽  
Yu Duan ◽  
...  
Keyword(s):  
Current Efficiency ◽  
Single Layer ◽  
Efficiency Improvement ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices ◽  
A Current

We have successfully demonstrated efficient single-layer organic light-emitting devices (OLEDs) with a current efficiency of 31.38 cd A−1.

Improve the Efficiency of White Organic Light-Emitting Devices Using Double-Doped System

2010 ◽  
Vol 152-153 ◽  
pp. 687-690
Author(s):  
Gui Ying Ding ◽  
Wen Long Jiang ◽  
Guang De Wang ◽  
Qiang Han ◽  
Xi Chang
Keyword(s):  
Current Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Maximum Current ◽  
Hole Transporting ◽  
White Oleds ◽  
Organic Light Emitting Devices ◽  
20 Nm ◽  
White Oled

The doped and non-doped white Organic light-emitting devices (OLEDs) were fabricated, using strong yellow emitting and hole-transporting ability of TPAHQZn. When the white OLED is a double-doped structure, greatly enhanced the efficiency of the device. The double-doped white device were fabricated as follows: ITO/2T-NATA (17 nm)/ CBP: 30% TPAHQZn: 8% Ir(ppy)3 (25 nm)/ NPBX (15 nm)/BCP(8nm)/TPBi: 10% Ir(ppy)3 (15nm)/Alq3 (20 nm)/LiF (1.3 nm)/Al. The double-doped white OLEDs were obtained with Commission International de L’Eclairage coordinates of (0.29,0.28) at 17 V, the maximum current efficiency increaed four times that double-doped white device of 4.12cd/A(8V) than non-doped of 1.03 cd/A (10V) .

Solution-processable, high luminance deep-blue organic light emitting devices based on novel naphthalene bridged bis-triphenylamine derivatives

2019 ◽  
Vol 7 (9) ◽  
pp. 2686-2698 ◽  
Author(s):  
Yuqin Li ◽  
Siming Gao ◽  
Nan Zhang ◽  
Xin Huang ◽  
Jinchang Tian ◽  
...  
Keyword(s):  
Current Efficiency ◽  
High Luminance ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue ◽  
Organic Light ◽  
Maximum Current ◽  
Solution Processable ◽  
Organic Light Emitting Devices ◽  
Very High

The optimal device E exhibited a very high luminance of 10 407 cd m−2 and a maximum current efficiency of 7.80 cd A−1.

Efficiency Enhancement of Tandem Organic Light-Emitting Devices Fabricated Utilizing an Organic BEDT-TTF and HAT-CN Charge Generation Layer

2015 ◽  
Vol 15 (10) ◽  
pp. 8070-8074
Author(s):  
Dae Hun Kim ◽  
Tae Whan Kim
Keyword(s):  
Current Efficiency ◽  
Operating Voltage ◽  
Efficiency Enhancement ◽  
Charge Generation ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Highest Occupied Molecular Orbital ◽  
Organic Light Emitting Devices

The electrical and optical properties of tandem organic light-emitting devices (OLEDs) fabricated utilizing an organic bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) and 1,4,5,8,9,11- hexaazatriphenylenehexacarbonitrile (HAT-CN) charge generation layer (CGL) were investigated to enhance their efficiency. While the operating voltage of the tandem OLEDs with a BEDT-TTF and HAT-CN CGL at 50 mA/cm2 was 11.2 V lower than that of the tandem OLEDs without a CGL, the current efficiency of the tandem OLEDs with a BEDT-TTF and a HAT-CN CGL at 50 mA/cm2 was 0.8 cd/A higher than that of the tandem OLEDs without a CGL. An increase in the current efficiency and a decrease in the operating voltage of the tandem OLEDs with a BEDT-TTF and an HAT-CN CGL were attributed to the enhancement of the electron injection due to its existence in the highest occupied molecular orbital level of the BEDT-TTF between the HAT-CN and the tris-(8- hydroxyquinoline)aluminum layer.

High performance gold(iii)-based white organic light-emitting devices with extremely small efficiency roll-off

2019 ◽  
Vol 7 (27) ◽  
pp. 8457-8464 ◽  
Author(s):  
Wai-Lung Cheung ◽  
Shiu-Lun Lai ◽  
Man-Chung Tang ◽  
Chin-Ho Lee ◽  
Mei-Yee Chan ◽  
...  
Keyword(s):  
Current Efficiency ◽  
High Performance ◽  
High Current ◽  
High Current Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
White Emission ◽  
Organic Light ◽  
Cie Coordinates ◽  
Organic Light Emitting Devices

WOLEDs based on Au-Y and FIrpic demonstrate high current efficiency with ∼4% efficiency roll-off and white emission with CIE coordinates of (0.33, 0.40).

Enhancement of Electroluminescence Efficiency for Organic Light-Emitting Devices due to the Introduction of the Well as Excton Confine Structure

2013 ◽  
Vol 785-786 ◽  
pp. 718-723 ◽  
Author(s):  
Li Shuang Wu ◽  
Hui Shan Yang
Keyword(s):  
Current Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Recombination Probability ◽  
Organic Light ◽  
Exciton Recombination ◽  
Single Well ◽  
Organic Devices ◽  
Organic Light Emitting Devices

An organic emitting device with well structure is reported. The well structure fabricated by alternating deposition of constituent tris-(8-hydroxyquinoline) aluminum (Alq) and 4, 7-diphenyl-1, 10-phenanthroline (BPhen) layers improved the current efficiency. The enhanced efficiency can be attributed to the strong accumulation of electrons and holes in the emitting layer, which leads to an increase of the exciton formation and exciton recombination probability. The single well device exhibits the highest current efficiency of 4.12cd/A at 4V, which is more than 1.2 times than that of the conventional organic light-emitting devices. It is an effective and simple way to improve the efficiency of the organic devices by utilizing well structure as the emitting layer with proper well number.

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