scholarly journals Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

10.3791/56494 ◽  
2017 ◽  
Author(s):  
Chong-Rong Wu ◽  
Tung-Wei Chu ◽  
Kuan-Chao Chen ◽  
Shih-Yen Lin
Keyword(s):  
Transition Metal ◽  
Metal Films ◽  
Device Fabrication ◽  
Large Area

scholarly journals Towards a Large-Area Freestanding Single-Crystal Ferroelectric BaTiO3 Membrane

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 733
Author(s):  
Qixiang Wang ◽  
Hong Fang ◽  
Di Wang ◽  
Jie Wang ◽  
Nana Zhang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Single Crystal ◽  
Metal Oxides ◽  
Data Storage ◽  
Transition Metal Oxides ◽  
Crack Density ◽  
Device Fabrication ◽  
Large Area ◽  
Study Approach ◽  
Potential Applications

The fabrication and transfer of freestanding single-crystal ferroelectric membranes deserve intensive investigations as to their potential applications in flexible wearable devices, such as flexible data storage devices and varied sensors in E-skin configurations. In this report, we have shown a comprehensive study approach to the acquisition of a large-area freestanding single-crystal ferroelectric BaTiO3 by the Sr3Al2O6 scarification layer method. By controlling the thickness of the BaTiO3 and Sr3Al2O6, the exposed area of the Sr3Al2O6 interlayer, and the utilization of an additional electrode La2/3Sr1/3MnO3 layer, the crack density on the freestanding BaTiO3 can be dramatically decreased from 24.53% to almost none; then, a more than 700 × 530 μm2 area high-quality freestanding BaTiO3 membrane can be achieved. Our results offer a clear and repeatable technology routine for the acquisition of a flexible large-area ferroelectric membrane, which should be instructive to other transition metal oxides as well. Our study can confidently boost flexible device fabrication based on single-crystal transition metal oxides.

FERROMAGNETISM IN EPITAXIAL TRANSITION METAL FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1657-C8-1658 ◽  
Author(s):  
C. M. Schneider ◽  
J. J. de Miguel ◽  
P. Bressler ◽  
J. Garbe ◽  
S. Ferrer ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Films

scholarly journals Experimental and molecular dynamics studies of an ultra-fast sequential hydrogen plasma process for fabricating phosphorene-based sensors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Rajabali ◽  
H. Asgharyan ◽  
V. Fadaei Naeini ◽  
A. Boudaghi ◽  
B. Zabihi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Dynamics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogen Plasma ◽  
Device Fabrication ◽  
Dynamics Simulation ◽  
Red Phosphorus ◽  
Large Area ◽  
Low Concentration

AbstractLow concentration phosphorene-based sensors have been fabricated using a facile and ultra-fast process which is based on an exfoliation-free sequential hydrogen plasma treatment to convert the amorphous phosphorus thin film into mono- or few-layered phosphorene sheets. These sheets have been realized directly on silicon substrates followed by the fabrication of field-effect transistors showing the low leakage current and reasonable mobility for the nano-sensors. Being capable of covering the whole surface of the silicon substrate, red phosphorus (RP) coated substrate has been employed to achieve large area phosphorene sheets. Unlike the available techniques including mechanical exfoliation, there is no need for any exfoliation and/or transfer step which is significant progress in shortening the device fabrication procedure. These phosphorene sheets have been examined using transmission electron microscopy (TEM), Scanning electron microscopy (SEM), Raman spectroscopy and atomic-force microscopy (AFM). Electrical output in different states of the crystallization as well as its correlation with the test parameters have been also extensively used to examine the evolution of the phosphorene sheets. By utilizing the fabricated devices, the sensitivity of the phosphorene based-field effect transistors to the soluble L-Cysteine in low concentrations has been studied by measuring the FET response to the different concentrations. At a gate voltage of − 2.5 V, the range of 0.07 to 0.60 mg/ml of the L-Cysteine has been distinguishably detected presenting a gate-controlled sensor for a low-concentration solution. A reactive molecular dynamics simulation has been also performed to track the details of this plasma-based crystallization. The obtained results showed that the imparted energy from hydrogen plasma resulted in a phase transition from a system containing red phosphorus atoms to the crystal one. Interestingly and according to the simulation results, there is a directional preference of crystal growth as the crystalline domains are being formed and RP atoms are more likely to re-locate in armchair than in zigzag direction.

Large-Area Organic–Transition Metal Dichalcogenide Hybrid Light-Emitting Device

ACS Photonics ◽  
2021 ◽  
Author(s):  
Jongchan Kim ◽  
Siwei Zhang ◽  
Shaocong Hou ◽  
Byungjun Lee ◽  
Guodan Wei ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Large Area ◽  
Light Emitting ◽  
Organic Transition

Optical transmission in perforated noble and transition metal films

2006 ◽  
Vol 8 (5) ◽  
pp. 458-463 ◽  
Author(s):  
F Przybilla ◽  
A Degiron ◽  
J-Y Laluet ◽  
C Genet ◽  
T W Ebbesen
Keyword(s):  
Transition Metal ◽  
Optical Transmission ◽  
Metal Films

scholarly journals Hydrogen Electrocatalysis: Self‐Assembly of Large‐Area 2D Polycrystalline Transition Metal Carbides for Hydrogen Electrocatalysis (Adv. Mater. 50/2018)

2018 ◽  
Vol 30 (50) ◽  
pp. 1870385 ◽  
Author(s):  
Xining Zang ◽  
Wenshu Chen ◽  
Xiaolong Zou ◽  
J. Nathan Hohman ◽  
Lujie Yang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Self Assembly ◽  
Metal Carbides ◽  
Large Area ◽  
Transition Metal Carbides

scholarly journals Electric Field-Induced Modification of Magnetocrystalline Anisotropy in Transition-metal Films and at Metal-Insulator Interfaces

2011 ◽  
Vol 16 (2) ◽  
pp. 161-163 ◽  
Author(s):  
K. Nakamura ◽  
T. Akiyama ◽  
T. Ito ◽  
M. Weinert ◽  
A.J. Freeman
Keyword(s):  
Transition Metal ◽  
Electric Field ◽  
Magnetocrystalline Anisotropy ◽  
Metal Films ◽  
Metal Insulator

Magnetic properties of transition metal films and islands on W(110)

1997 ◽  
pp. 570-573
Author(s):  
J. Bansmann ◽  
L. Lu ◽  
M. Getzlaff ◽  
K. H. Meiwes Broer
Keyword(s):  
Magnetic Properties ◽  
Transition Metal ◽  
Metal Films

scholarly journals High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1067 ◽  
Author(s):  
Hafiz Muhammad Salman Ajmal ◽  
Fasihullah Khan ◽  
Noor Ul Huda ◽  
Sunjung Lee ◽  
Kiyun Nam ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Electronic Device ◽  
Deep Level ◽  
Zno Nanorods ◽  
Ultra Violet ◽  
Device Fabrication ◽  
Electrode Structure ◽  
Large Area ◽  
X Ray

As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.

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