Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator

2019 ◽  
Vol 74 (12) ◽  
pp. 1171-1175
Author(s):  
Sangwook Jo ◽  
Geonwook Yoo ◽  
Junseok Heo
Keyword(s):  
Modeling And Simulation ◽  
Simulation Study ◽  
Gate Insulator ◽  
Self Heating ◽  
Bottom Gate

scholarly journals Modeling and simulation study of a novel electromechanical clutch actuation system

2017 ◽  
Vol 9 (8) ◽  
pp. 168781401772040 ◽  
Author(s):  
Fengyu Liu ◽  
Li Chen ◽  
Dongxu Li ◽  
Jianlong Zhang ◽  
Chengliang Yin
Keyword(s):  
Modeling And Simulation ◽  
Simulation Study ◽  
Actuation System

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface

Preliminary Modeling and Simulation Study on Olfactory Cell Sensation

2009 ◽  
Author(s):  
Jun Zhou ◽  
Wei Yang ◽  
Peihua Chen ◽  
Qingjun Liu ◽  
Ping Wang ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Simulation Study

scholarly journals Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3149 ◽  
Author(s):  
Sungju Choi ◽  
Jae-Young Kim ◽  
Hara Kang ◽  
Daehyun Ko ◽  
Jihyun Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Oxygen Content ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Current Stress ◽  
Bias Stress ◽  
Self Heating ◽  
Effect Of Oxygen ◽  
Amorphous Ingazno ◽  
Bottom Gate

The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold voltage shift (ΔVT) was dominated by electron trapping in the gate insulator (GI), whereas it was compensated by donor creation in a-IGZO active regions when both current flows and a high lateral electric field were present. Stress-induced ΔVT increased with increasing oxygen content irrespective of the type of stress because oxygen content influenced GI quality, i.e., higher density of GI electron traps, as well as typical direct current (DC) performance like threshold voltage, mobility, and subthreshold swing. It was also found that self-heating became another important mechanism, especially when the vertical electric field and channel current were the same, independent of the oxygen content. The increased ΔVT with oxygen content under positive gate bias stress, positive gate and drain bias stress, and target current stress was consistently explained by considering a combination of the density of GI electron traps, electric field relaxation, and self-heating-assisted electron trapping.

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