DSSCs Fabrication Using Nano-Structured Titania as Photoanode

2015 ◽  
Vol 781 ◽  
pp. 184-188
Author(s):  
Mallika Thabuot ◽  
Chaiyaput Kruehong
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoconversion Efficiency ◽  
Applied Potential ◽  
One Step ◽  
Set Up

This project aimed to fabricate the nanostructure of titanium dioxide by one-step anodization for DSSCs. PCC and BCC set up were investigated for the oxidation of Ti-sheet in EG electrolyte consisting of 0.38%wt. NH4F and 1.79 %wt. DI water for 3 hrs, under applied potential of 10-40 V. Anodized TiO2 films were annealed at 600°C for 3 hrs to crystallize the initially amorphous anodized films. The as-prepared nanoporous-TiO2 layer obtained from anodization of Ti by using PCC was detachment flaking film, while using BCC gave the films adhered on the Ti-substrates. The most perfectly adherent nanoporous-TiO2 film was fabricated via BCC under the applied potential of 40 V for 3 hrs. This attached film on Ti substrate was used as the anode of DSSC cell which having the active area of 0.5x0.5 cm2, the investigation was done under one sun condition (AM 1.5, Pin 100 mW/cm2). A photoconversion efficiency (ɳ) of 1.198% was obtained by using annealed Ti/TiO2-nanotube/FTO based DSSC as a photoanode with a short-circuit current density (Jsc) of 2.871 mA/cm2, open-circuit voltage (Voc) of 0.794 V and fill factor (FF) of 0.526. This overall photoconversion efficiency (ɳ) was approximately 0.7 times as much as that of a corresponding DSSC fabricated with P25 (commercial TiO2).

scholarly journals A Study on the Effects of Selenization Temperature on the Properties of Na-Doped Cu2ZnSn(S,Se)4 Thin Film and Its Correlation with the Performance of Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2434
Author(s):  
Zhanwu Wang ◽  
Dongyue Jiang ◽  
Fancong Zeng ◽  
Yingrui Sui
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Sol Gel ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Post Annealing ◽  
Different Temperatures ◽  
Selenization Temperature

In this study, we prepared Na-doped Cu2ZnSn(S,Se)4 [noted as (Na0.1Cu0.9)2ZnSn(S,Se)4] films on the Mo substrate using a simple and cheap sol–gel method together with the post-annealing technique. The effects of selenization temperature on the properties of Na-doped Cu2ZnSn(S,Se)4 were surveyed. The results indicated that some sulfur atoms in the films were substituted by selenium atoms by increasing the selenization temperature, and all films selenized at different temperatures had a kesterite structure. As the selenization temperature increased from 520 to 560 °C, the band gaps of the film can be tuned from 1.03 to 1 eV. The film with better morphology and opto-electrical properties can be obtained at an intermediate selenization temperature range (e.g., 540 °C), which had the lowest resistivity of 47.7 Ω cm, Hall mobility of 4.63 × 10−1 cm2/Vs, and carrier concentration of 2.93 × 1017 cm−3. Finally, the best power conversion efficiency (PCE) of 4.82% was achieved with an open circuit voltage (Voc) of 338 mV, a short circuit current density (Jsc) of 27.16 mA/cm2 and a fill factor (FF) of 52.59% when the selenization temperature was 540 °C.

Light-induced Open-circuit Voltage Increase in Amorphous Silicon/Microcrystalline Silicon Tandem Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Shengzhi Xu ◽  
Shaozhen Xiong ◽  
Xinhua Geng ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
Limited Current

ABSTRACTLight-induced metastability of amorphous/microcrystalline (micromorph) silicon tandem solar cell, in which the microcrystalline bottom cell was deposited in a single-chamber system, has been studied under a white light for more than 1000 hours. Two different light-induced metastable behaviors were observed. The first type was the conventional light-induced degradation, where the open-circuit voltage (Voc), fill factor (FF), and short-circuit current density (Jsc) were degraded, hence the efficiency was degraded as well. This phenomenon was observed mainly in the tandem cells with a bottom cell limited current mismatch. The second type was with a light-induced increase in Voc, which sometimes resulted in an increase in efficiency. The second type of light-induced metastability was observed in the tandem cells with a top cell limited current mismatch. The possible mechanisms for these phenomena are discussed.

scholarly journals Promising Shadow Masking Technique for the Deposition of High-Efficiency Amorphous Silicon Solar Cells Using Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 6 ◽  
Author(s):  
Kawtar Belrhiti Alaoui ◽  
Saida Laalioui ◽  
Badr Ikken ◽  
Abdelkader Outzourhit
Keyword(s):  
Refractive Index ◽  
Vapor Deposition ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

In this work, a detailed description of the various steps involved in the fabrication of high-efficiency hydrogenated amorphous-silicon cells using plasma-enhanced chemical vapor deposition, and a novel shadow masking technique is presented. The influence of the different masking methods on the cell parameters was experimentally investigated. Particularly, the short-circuit current density (Jsc), the fill factor, the open circuit voltage (Voc), and the resistive losses indicated by the shunt (Rsh) and series (Rs) resistances were measured in order to assess the performance of the cells as a function of the masks used during the cell fabrication process. The results indicate that the use of a masking technique where the p-i-n structure was first deposited over the whole surface of a 20 cm2 × 20 cm2 substrate, followed by the deposition, deposits the back contact through a metal mask, and by the ultrasonic soldering of indium to access the front contact is a good alternative to laser scribing in the laboratory scale. Indeed, a record efficiency of 8.8%, with a short-circuit current density (Jsc) of 15.6 mA/cm2, an open-circuit voltage (Voc) of 0.8 V, and a fill factor of 66.07% and low resistive losses were obtained by this technique. Furthermore, a spectroscopic ellipsometry investigation of the uniformity of the film properties (thickness, band gap, and refractive index) on large-area substrates, which is crucial to mini-module fabrication on a single substrate and for heterojunction development, was performed using the optimal cell deposition recipes. It was found that the relative variations of the band gap, thickness, and refractive index n are less than 1% suggesting that the samples are uniform over the 20 cm2 × 20 cm2 substrate area used in this work.

Simultaneous Enhancement of Open-Circuit Voltage, Short-Circuit Current Density, and Fill Factor in Polymer Solar Cells

2011 ◽  
Vol 23 (40) ◽  
pp. 4636-4643 ◽  
Author(s):  
Zhicai He ◽  
Chengmei Zhong ◽  
Xun Huang ◽  
Wai-Yeung Wong ◽  
Hongbin Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

scholarly journals Effects of Hole-Collecting Buffer Layers and Electrodes on the Performance of Flexible Plastic Organic Photovoltaics

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Sungho Woo ◽  
Hong-Kun Lyu ◽  
Yoon Soo Han ◽  
Youngkyoo Kim
Keyword(s):  
Indium Tin Oxide ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Series Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Buffer Layers ◽  
Large Area

Here we report the influences of the sheet resistance (Rsheet) of a hole-collecting electrode (indium tin oxide, ITO) and the conductivity of a hole-collecting buffer layer (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS) on the device performance of flexible plastic organic photovoltaic (OPV) devices. The series resistance (RS) of OPV devices steeply increases with increasingRsheetof the ITO electrode, which leads to a significant decrease of short-circuit current density (JSC) and fill factor (FF) and power conversion efficiency, while the open-circuit voltage (VOC) was almost constant. By applying high-conductivity PEDOT:PSS, the efficiency of OPV devices with highRsheetvalues of 160 Ω/□ and 510 Ω/□ is greatly improved, by a factor of 3.5 and 6.5, respectively. These results indicate that the conductivities of ITO and PEDOT:PSS will become more important to consider for manufacturing large-area flexible plastic OPV modules.

Fabrication of TiO2 Nanotubes Array by Anodization for DSSC

2013 ◽  
Vol 743-744 ◽  
pp. 920-925
Author(s):  
Hong Zhou Yan ◽  
Jun You Yang ◽  
Shuang Long Feng ◽  
Ming Liu ◽  
Jiang Ying Peng ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray

TiO2 nanotubes array was fabricated by anodization. Effect of reaction duration on the morphology of TiO2 nanotube arrays was studied detailedly. The structure and morphology of the prepared nanotubes array was characterized by X-ray diffraction and scanning electron microscopy, respectively. The fabricated TiO2 arrays were peeled off and adhered to FTO glass with adhesive (mixture of tetrabutyl titanate and polyethylene glycol), then they were sintered at 450 for photoanode of DSSC. The photovoltaic performance of the prepared sample as the DSSC anode was investigated. An open circuit voltage of 0.69V and a short circuit current density of 7.78mA/cm2 were obtained, and the fill factor and the convert efficiency were 0.517 and 2.78%, respectively.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

Demonstration of a 4H SiC Betavoltaic Cell

2006 ◽  
Vol 527-529 ◽  
pp. 1351-1354 ◽  
Author(s):  
M.V.S. Chandrashekhar ◽  
Christopher I. Thomas ◽  
Hui Li ◽  
Michael G. Spencer ◽  
Amit Lal
Keyword(s):  
Current Density ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Type Model ◽  
Good Correspondence ◽  
Betavoltaic Cell

A betavoltaic cell in 4H SiC is demonstrated. An abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single p-n junction. An efficiency of 3.7% was obtained. A simple photovoltaic type model was used to explain the results. Good correspondence with the model was obtained. Fill factor and backscattering effects were included. Efficiency was limited by edge recombination and poor fill factor.

scholarly journals Dependence of material properties and photovoltaic performance of triple cation tin perovskites on the iodide to bromide ratio

2019 ◽  
Vol 150 (11) ◽  
pp. 1921-1927 ◽  
Author(s):  
Stefan Weber ◽  
Thomas Rath ◽  
Birgit Kunert ◽  
Roland Resel ◽  
Theodoros Dimopoulos ◽  
...  
Keyword(s):  
Material Properties ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
X Ray

Abstract In this work, the influence of a partial introduction of bromide (x = 0–0.33) into MA0.75FA0.15PEA0.1Sn(BrxI1−x)3 (MA: methylammonium, FA: formamidinium, PEA: phenylethylammonium) triple cation tin perovskite on the material properties and photovoltaic performance is investigated and characterized. The introduction of bromide shifts the optical band gap of the perovskite films from 1.29 eV for the iodide-based perovskite to 1.50 eV for the perovskite with a bromide content of x = 0.33. X-ray diffraction measurements reveal that the size of the unit cell is also gradually reduced based on the incorporation of bromide. Regarding the photovoltaic performance of the perovskite films, it is shown that already small amounts of bromide (x = 0.08) in the perovskite system increase the open circuit voltage, short circuit current density and fill factor. The maximum power conversion efficiency of 4.63% was obtained with a bromide content of x = 0.25, which can be ascribed to the formation of homogeneous thin films in combination with higher values of the open circuit voltage. Upon introduction of a higher amount of bromide (x = 0.33), the perovskite absorber layers form pinholes, thus reducing the overall device performance. Graphic abstract

Solar Cells from Mixed SiCi2H2 and SiH4 Plasmas

1997 ◽  
Vol 467 ◽  
Author(s):  
A. M. Payne ◽  
B. K. Crone ◽  
S. Wagner
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Boron Doped ◽  
Phosphorus Doped ◽  
Defect Densities

ABSTRACTWe have deposited and analyzed solar cells from mixed SiCI2H2/SiH4 plasmas. Intrinsic and doped films were also grown to explain the cell results. The SiCI2H2 cells have lower fill factor and short circuit current density than the SiH4 cells due to the higher defect densities and lower photoconductivities of SiCI2H2/SiH4 material. Cell results showed low VQC if the n-layer was in contact with an i-layer deposited from SiCI2H2/SiH4. A pure silane buffer layer between the i- and n-layers was needed to attain the standard open circuit voltage. The reduced Voc results from a reduced conductivity of phosphorus-doped SiCI2H2/SiH4 material. However, comparison of doped films showed higher conductivities for boron-doped material grown from the SiCI2H2/SiH4 mixture than from pure silane.

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