Effect of Nb and Mn Substitution on Bi0.5Na0.5TiO3 Lead-Free Piezoceramics with Enhanced Electrical Properties

2017 ◽  
Vol 863 ◽  
pp. 8-14
Author(s):  
Yu Chen Guo ◽  
Hui Qing Fan ◽  
Jing Shi
Keyword(s):  
Room Temperature ◽  
Ferroelectric Properties ◽  
Solid State Reaction Method ◽  
Perovskite Oxide ◽  
Lead Free ◽  
Conventional Solid State Reaction ◽  
Large Defect ◽  
Defect Dipole ◽  
Mn Doped

The perovskite oxide Bi0.5Na0.5MnxTi1-xO3, Bi0.5Na0.5NbxTi1-xO3, Bi0.5Na0.5 (Mn0.5Nb0.5)xTi1-xO3 and Bi0.5Na0.5TiO3 ceramics (x=0.25%) were prepared via the conventional solid state reaction method. The role of Mn as an acceptor, Nb as a donor and (Mn0.5Nb0.5) substitution at B site in BNT lead-free piezoceramics was investigated. The (Mn0.5Nb0.5) substitution led to the inhibited of reduction of Ti4+ to Ti3+ and gave rise to large defect-dipole clusters containing highly localized electrons which should be responsible for the increase of Tc and Td. The ferroelectric properties and field-induced strains were both improved by Mn-acceptor and (Mn0.5Nb0.5) co-doped. The fatigue-resistant properties of Nb doped BNT ceramics were comparable to BNT ceramics, Mn doped ceramics were found to have significantly improved fatigue-resistant properties, while almost no profound fatigue was observed in BNT-MnNb ceramics after switching over 106 cycles at room temperature.

Study on Dielectric and Ferroelectric Properties of Gd-Doped Sr2Bi4Ti5O18 Ceramics

2011 ◽  
Vol 328-330 ◽  
pp. 1131-1134
Author(s):  
Qian Chen ◽  
Zhi Jun Xu ◽  
Rui Qing Chu ◽  
Yong Liu ◽  
Ming Li Chen ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Ferroelectric Properties ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Structural Ceramics ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Maximum Value ◽  
Pure Bismuth ◽  
Ferroelectric And Piezoelectric Properties

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.

Electrical Properties of Nb-Doped and Nb-Mn-Codoped BaTiO3-(Bi0.5Na0.5)TiO3 Lead-Free PTCR Ceramics

2010 ◽  
Vol 67 ◽  
pp. 134-142
Author(s):  
Guo Rong Li ◽  
Sen Lin Leng ◽  
Liao Ying Zheng ◽  
Jiang Tao Zeng ◽  
Zhi Jun Xu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Solid State Reaction Method ◽  
Positive Temperature Coefficient ◽  
Lead Free ◽  
High Resistivity ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Conventional Solid State Reaction ◽  
Xrd Patterns ◽  
Temperature Resistivity

Nb-doped and Nb-Mn-codoped (1-xmol%)BaTiO3-xmol%(Bi0.5Na0.5)TiO3 (BBNTx) lead-free positive temperature coefficient of resistivity (PTCR) ceramics were prepared by the conventional solid state reaction method. The XRD patterns indicated that all BBNTx samples formed a single perovskite structure with tetragonal phase. 0.25 mol% Nb doped BBNT1 ceramic, sintered at 1330°C for 1h in air, had low room-temperature resistivity (ρ25) of 80 Ω•cm and a high resistivity jump (maximum resistivity [ρmax]/minimum resistivity [ρmin]) of 4.2 orders of magnitude with Tc about 152°C. The Nb-doped BBNTx (10≤x≤60) ceramics also showed distinct PTC effect with Tc between 185 and 232°C by sintering in N2, which was shut off when samples were cooled to a low temperature. In addition, The Nb-Mn-codoped BBNT1 ceramics exhibited higher resistivity jump than the single Nb-doped ones, with increasing the room-temperature resistivity.

scholarly journals Structural and Electric Properties of MnO2-Doped KNN-LT Lead-Free Piezoelectric Ceramics

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 705
Author(s):  
Yunfeng Deng ◽  
Junjun Wang ◽  
Chunxiao Zhang ◽  
Hui Ma ◽  
Chungeng Bai ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Sintering Temperature ◽  
Ferroelectric Properties ◽  
Piezoelectric Ceramics ◽  
Relevant Information ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Potassium Sodium Niobate ◽  
Conventional Solid State Reaction ◽  
Dielectric And Piezoelectric Properties

Structural, ferroelectric, dielectric, and piezoelectric properties of K0.5Na0.5NbO3-LiTaO3-xmol%MnO2 lead-free piezoelectric ceramics with 0.0 ≤ x ≤ 0.3 were studied. The ceramic samples were synthesized through the conventional solid-state reaction method. The MnO2 addition can reduce the sintering temperature of KNLNT ceramics. Compared with undoped KNLNT ceramic, the piezoelectric measurements showed that piezoelectric properties of K0.5Na0.5NbO3-LiTaO3-xMnO2 were improved (d33 = 251 pC/N) when x = 0.1. In addition, KNLNT-xMnO2 ceramics have larger Pr(20.59~21.97 μC/cm2) and smaller Ec(10.77~6.95 kV/cm), which indicates MnO2 has excellent softening property, which improves the ferroelectric properties of KNLNT ceramics This work adds relevant information regarding of potassium sodium niobate K0.5Na0.5NbO3 (KNN) when doped Li, Ta, Mn at the B-site.

scholarly journals Enhanced Electrostrictive Coefficient and Suppressive Hysteresis in Lead-Free Ba(1−x)SrxTiO3 Piezoelectric Ceramics with High Strain

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 555
Author(s):  
Mu Song ◽  
Xiaoyuan Sun ◽  
Qiong Li ◽  
Hao Qian ◽  
Yunfei Liu ◽  
...  
Keyword(s):  
High Precision ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
High Sensitivity ◽  
Piezoelectric Ceramics ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Relaxor Behavior ◽  
Conventional Solid State Reaction ◽  
Polarization Electric Field

Lead-free piezoelectric ceramics with both low hysteresis and superior electrostrictive coefficient features are crucial toward providing desired performance for intelligent electrical devices, especially in high-precision displacement actuators. In this work, we propose a novel scenario, which is to design the phase transition around ambient temperature to enhance electrostrictive effect and inhibit hysteresis. In other words, the dense ceramics with cubic phases (C) and tetragonal phases (T) coexisting at RT (room temperature) were designed. According to this scenario, the Ba(1−x)SrxTiO3 (abbreviated as BT-100xST) ceramics were fabricated by the conventional solid-state reaction method. The relaxor behavior, ferroelectric properties, crystal structure and microstructure of BT-100xST ceramics have been investigated in detail. As a result, the BT-100xST ceramics with x = 0.20–0.40 present relaxor behavior which was indicated by dielectric constant as a function of temperature and (polarization–electric field) P–E hysteresis loops. The BT-30ST ceramics exhibit enhanced electrostrictive coefficient Q33 (>0.034 m4/C2), and the electrostrictive strain and low hysteresis achieves 0.11% and 2%, respectively. The BT-100xST ceramics are considered as a prospective option for application in displacement actuators with high sensitivity and high precision.

Effect of Sintering Temperature on Structure and Dielectric Properties of Lead Free K0.5Na0.5NbO3 Prepared via Hot Isostatic Pressing

2017 ◽  
Vol 888 ◽  
pp. 42-46 ◽  
Author(s):  
Fatin Khairah Bahanurdin ◽  
Julie Juliewatty Mohamed ◽  
Zainal Arifin Ahmad
Keyword(s):  
Grain Size ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Hot Isostatic Pressing ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Tangent Loss ◽  
Isostatic Pressing ◽  
Tan Δ

In this research, alkaline niobate known as K0.5Na0.5NbO3 (KNN) lead-free piezoelectric ceramic was synthesis by solid state reaction method which pressing at different sintering temperatures (1000 °C and 1080 °C) prepared via hot isostatic pressing (HIP)). The effect of sintering temperature on structure and dielectric properties was studied. The optimum sintering temperature (at 1080 °C for 30 minutes) using hot isostatic pressing (HIP) was successfully increase the density, enlarge the particle grain size in the range of 0.3 µm – 2.5 µm and improves the dielectric properties of K0.5Na0.5NbO3 ceramics. The larger grain size and higher density ceramics body will contribute the good dielectric properties. At room temperature, the excellent relative permittivity and tangent loss recorded at 1 MHz (ɛr = 5517.35 and tan δ = 0.954), respectively for KNN1080HIP sample. The KNN1080HIP sample is also exhibits highest relative density which is 4.485 g/cm3. The ɛr depends upon density and in this work, the density increase as the sintering temperature increase, which resulting the corresponding ɛr value also increases.

A high temperature stable piezoelectric strain of KNN-based ceramics

2018 ◽  
Vol 6 (41) ◽  
pp. 19967-19973 ◽  
Author(s):  
Zhenyong Cen ◽  
Yu Huan ◽  
Wei Feng ◽  
Yan Yu ◽  
Peiyao Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Solid State Reaction ◽  
Piezoelectric Ceramics ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Piezoelectric Strain

Lead-free (1 − x)(0.96K0.46Na0.54Nb0.98Ta0.02O3–0.04Bi0.5(Na0.82K0.18)0.5ZrO3)–xCaZrO3 ((1 − x)(0.96KNNT–0.04BNKZ)–xCZ) piezoelectric ceramics were prepared by the conventional solid-state reaction method.

scholarly journals Effect of Bi2O3 content on the microstructure and electrical properties of SrBi2Nb2O9 piezoelectric ceramics

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15613-15620 ◽  
Author(s):  
Xiaochun He ◽  
Ruiqing Chu ◽  
Zhijun Xu ◽  
Zhongran Yao ◽  
Jigong Hao
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Molar Ratio ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Lead Free Ceramics ◽  
Bi2o3 Content

Lead-free ceramics, SrBi2Nb2O9–xBi2O3 (SBN–xBi), with different Bi contents of which the molar ratio, n(Sr) : n(Bi) : n(Nb), is 1 : 2(1 + x/2) : 2 (x = −0.05, 0.0, 0.05, 0.10), were prepared by conventional solid-state reaction method.

Diffuse Phase Transition and Dielectric Properties of Lead-Free Zr-Doped BCTS Ceramics

2017 ◽  
Vol 866 ◽  
pp. 259-262 ◽  
Author(s):  
Puripat Kantha ◽  
Kamonpan Pengpat ◽  
Nuttapon Pisitpipathsin
Keyword(s):  
Phase Transition ◽  
Dielectric Constant ◽  
Diffuse Phase Transition ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Phase Transition Behavior ◽  
Conventional Solid State Reaction ◽  
Maximum Dielectric Constant ◽  
Cubic Structure ◽  
Diffuse Phase

Lead-free Ba0.9Ca0.1Sn0.06Ti0.94-xZrxO3 (BCTSZ) ceramics where x = 0.00, 0.03, 0.05, 0.07 and 0.09 were prepared by the conventional solid-state reaction method. The dielectric constant of the Zr doped BCTS ceramic was enhanced by Zr incorporation. The maximum dielectric constant were obtained at the composition of x = 0.05. The dielectric property investigation indicated that the degree of the diffuse phase transition behavior increased with Zr substitution. Phase transition of tetragonal to cubic structure was significantly dependent on the amount of Zr added.

Investigations of PbxSr1-xTiO3 Thin Films and Ceramics for Microelectronic Applications

2004 ◽  
Vol 811 ◽  
Author(s):  
M. Jain ◽  
Yu.I. Yuzyuk ◽  
R.S. Katiyar ◽  
Y. Somiya ◽  
A.S. Bhalla ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Room Temperature ◽  
Sol Gel ◽  
Solid State Reaction Method ◽  
Phase Shifters ◽  
Conventional Solid State Reaction ◽  
Mode Behavior ◽  
Dielectric Devices ◽  
Pst System

ABSTRACTWe have investigated electrical and optical properties of the lead strontium titanate {(PbxSr1-x)TiO3 or PST} ceramic and dielectric properties of the thin films of PST at low and high frequencies. (PbxSr1-x)TiO3 compositions with × ≤ 0.4 are paraelectric at room temperature and exhibit ferroelectric phase transition below room temperature. Only one phase transition in the PST system (compared to three in BaxSr1-xTiO3) was recorded. The studies indicated that PST has potential for tunable microwave devices in the paraelectric phase. In the present studies, Pb0.3Sr0.7TiO3 (PST30) ceramic was prepared by the conventional solid-state reaction method and thin films of PST were prepared by sol-gel technique. Structural, microstructural, dielectric, and Raman measurements were performed on these samples. Sharp phase transition was observed in case of the ceramic by dielectric and Raman measurements at 283 K. Raman measurements revealed well-pronounced soft-mode behavior below the Curie temperature in PST ceramic. The thin film of PST deposited on lanthanum aluminate substrate was highly (100) oriented and showed dielectric maxima at ∼280 K, which was close to that in case of the bulk. Eight element coupled micro-strip phase shifters (CMPS) was fabricated on the PST film and tested in the frequency range of 15-17 GHz. The average figure of merit of 49 °/dB for PST30 film in the Ku band at 533 kV/cm suggests the potentiality of these films for high frequency tunable dielectric devices.

Effect of Gd Substitution on the Dielectric Properties and Magnetoelectric Effect of BiFeO3

2010 ◽  
Vol 150-151 ◽  
pp. 1470-1475
Author(s):  
Gui Lin Song ◽  
Tian Xing Wang ◽  
Cun Jun Xia ◽  
Chao Li ◽  
Fang Gao Chang
Keyword(s):  
Dielectric Constant ◽  
Rare Earth ◽  
Dielectric Loss ◽  
Room Temperature ◽  
Magnetoelectric Effect ◽  
Solid State Reaction Method ◽  
Impurity Phase ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Dielectric Relaxation Process

Multiferroic Bi1-xGdxFeO3(x=0, 0.05, 0.1, 0.15, 0.2) ceramics were prepared by conventional solid state reaction method. For all the samples prepared, they exhibit magnetoelectric effect at room temperature, and the dielectric constant and dielectric loss decrease with increasing frequency in the range from 10000Hz to 1 MHz from a typical orientational dielectric relaxation process. It has been found that both dielectric constant and dielectric loss are strongly dependent on the Gd3+ content. And substitution of Bi with rare earth Gd helps to eliminate the impurity phase in BiFeO3 ceramics.,

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