Structure and Field Emission Properties of CNx Powders Synthesized by a Polymerization Process

2015 ◽  
Vol 1095 ◽  
pp. 666-670
Author(s):  
Chun Xue Zhai ◽  
Li Li Zhao ◽  
Zhi Yong Zhang ◽  
Wu Zhao

The CNx powders were prepared by a polymerization process. The phase structure and bonding structure of the as-prepared powder were analyzed by X–ray diffraction and X–ray photoelectron spectroscopy, respectively. To prepare CNx field emission cathode, the CNx powders were coated onto Ti substrate using a suspension sedimentation method, followed by an annealing treatment to form a TiC phase. A three layer (Ti substrate–TiC joint network–CNx particles) structure model was proposed to explain the electron field emission properties for the as-prepared field emission cathode. The field emission measurement shows that for the as-prepared CNx cathode, the threshold electric field is 2.04 V/μm and the emission current density at 3.73 V/μm is 158 μA/cm.

NANO ◽  
2011 ◽  
Vol 06 (05) ◽  
pp. 489-496 ◽  
Author(s):  
H. X. ZHONG ◽  
C. X. WANG

A simple hydrothermal route was employed to prepare flower-like SnS2 and In -doped SnS2 by using biomolecular L-cysteine as sulfur source. The synthetic samples were characterized by X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy in detail. Furthermore, the field emission from both the materials was investigated, it was found that both of them have excellent field emission properties, and the doped In has enhanced the field emission properties.


2020 ◽  
Vol 12 (2) ◽  
pp. 99-110
Author(s):  
K.M. Aung ◽  
E.P. Sheshin ◽  
Y.M. Htwe ◽  
W.Z. Hlaing ◽  
H.W. Aung

2013 ◽  
Vol 6 (10) ◽  
pp. 105102 ◽  
Author(s):  
Yusuke Iwai ◽  
Kazuo Muramatsu ◽  
Shougo Tsuboi ◽  
Atsuo Jyouzuka ◽  
Tomonori Nakamura ◽  
...  

2019 ◽  
Vol 89 (12) ◽  
pp. 1836
Author(s):  
Н.А. Дюжев ◽  
Г.Д. Демин ◽  
Н.А. Филиппов ◽  
И.Д. Евсиков ◽  
П.Ю. Глаголев ◽  
...  

Abstract The technological prospects for the creation of a system of microfocus X-ray tubes with the use of silicon field emission of nanocathodes have been discussed. A numerical analysis of the field-emission current from a nanoscale semiconductor cathode regulated by voltage on a grid electrode has been carried out on the basis of which a scheme for controlling the elements of the matrix of field-emission cathode assemblies has been proposed. The current–voltage characteristics of silicon field emission nanocathodes have been measured. They are in good agreement with the theoretical estimates of the field-emission current. A full technological cycle of the development of elements of microfocus X-ray tubes (a set of field-emission cathode assemblies and a set of anode assemblies) has been performed. The results can be used to create systems of microfocus X-ray tubes for nanolithographic equipment of a new generation.


2001 ◽  
Vol 685 ◽  
Author(s):  
A.G Chakhovskoi ◽  
N.N Chubun ◽  
C.E. Hunt ◽  
A.N Obraztsov ◽  
A.P. Volkov

AbstractPlanar field-emission cathode structures consisting of nanostructured carbon flakes have been investigated as an electron source for flat panel display application.Layers of nanoflakes were grown on silicon and molybdenum substrates using a high- temperature pyrolitic plasma-assisted CVD method. The result is a vertically oriented nanocluster layer of 1-2 micrometer height chemically bonded with the substrates. Additional orientation of the flakes, occurring during the first activation of the cathodes, was observed.Field emission properties of the emitters were studied in a vacuum chamber and in sealed flat-panel prototype devices with non-patterned low-voltage phosphor screens. Emitters with an area up to 1 square inch were tested under DC currents up to 100 microamps in diode mode. Anode bias up to 1.5 kV was applied. Current fluctuations of 1-2% were achieved using loading resistor.


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