Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

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Phosphorus Doping of Boron Carbon Alloys

MRS Proceedings ◽

10.1557/proc-452-1031 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 2

Author(s):

Seong-Don Hwang ◽

P. A. Dowben ◽

A. Cheeseman ◽

J. T. Spencer ◽

D. N. Mcilroy

Keyword(s):

Chemical Vapor Deposition ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Source ◽

Phosphorus Doping ◽

Alloy Films ◽

Phosphorus Doped ◽

Boron Carbon

AbstractPhosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carburane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

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High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.10(3).03001 ◽

2018 ◽

Vol 10 (3) ◽

pp. 03001-1-03001-6 ◽

Cited By ~ 2

Author(s):

Bharat Gabhale ◽

◽

Ashok Jadhawar ◽

Ajinkya Bhorde ◽

Shruthi Nair ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Cvd Method ◽

High Band

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Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6974 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6974-6977 ◽

Cited By ~ 3

Author(s):

Suguru Noda ◽

Takeshi Tsumura ◽

Jota Fukuhara ◽

Takashi Yoda ◽

Hiroshi Komiyama ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Auger Electron Spectroscopy ◽

Vapor Deposition ◽

Electron Spectroscopy ◽

Auger Electron ◽

Chemical Vapor

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Low band gap conformal polyselenophene thin films by oxidative chemical vapor deposition

Journal of Materials Chemistry ◽

10.1039/c1jm13755g ◽

2012 ◽

Vol 22 (2) ◽

pp. 405-410 ◽

Cited By ~ 21

Author(s):

Dhiman Bhattacharyya ◽

Karen K. Gleason

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Band Gap

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Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

MRS Proceedings ◽

10.1557/proc-495-171 ◽

1997 ◽

Vol 495 ◽

Cited By ~ 7

Author(s):

Jennifer A. Hollingsworth ◽

William E. Buhro ◽

Aloysius F. Hepp ◽

Philip P. Jenkins ◽

Mark A. Stan

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Fused Silica ◽

Direct Band Gap ◽

Cuins2 Thin Films ◽

Potential Applications ◽

Direct Band

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

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