Fabrication and Characterization of Transparent Conducting ZnO: Al Films for Organic Optoelectronic Devices

2012 ◽  
Vol 502 ◽  
pp. 72-76 ◽  
Author(s):  
Zhi You Zhong ◽  
J. Zhou ◽  
J.H. Gu ◽  
X. He ◽  
J. Hou ◽  
...  
Keyword(s):  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Discharge Power ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Average Optical Transmittance ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic

Al-doped ZnO (ZnO:Al) thin films were deposited on glass substrates by rf magnetron sputtering technique. The effect of discharge power on the structural, optical and electrical characteristics of ZnO:Al films was investigated by X-ray diffraction (XRD), four-probe meter and optical transmission spectroscopy. The results show that the films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The highest figure of merit of 5.58×10-3 -1 is obtained from the film prepared at the discharge power of 200 W. The average optical transmittance in the visible range of the films is over 78.2%.

Room Temperature Deposition and Properties of AZO Thin Films by DC Magnetron Sputtering under Different Plasma Power

2011 ◽  
Vol 194-196 ◽  
pp. 2440-2443 ◽  
Author(s):  
Jing Rong Chi ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Dong Ping Zhang ◽  
Xing Min Cai ◽  
...  
Keyword(s):  
Grain Size ◽  
Room Temperature ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Plasma Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Average Optical Transmittance ◽  
Temperature Deposition

To evaluate the influence of plasma power on the structural, electrical and optical properties of Al-doped ZnO (AZO) films, a set of polycrystalline AZO samples under different plasma power were deposited on glass substrates at room temperature. X-ray diffraction technique (XRD), four-point probe measurements and spectrophotometer were used to characterize these films. XRD shows that all AZO films have a hexagonal wurtzite structure with prominent (002) orientation. With the plasma power increasing, the grain size first increases and then decreases. The largest grain size of 23.6 nm in the films is obtained at the plasma power of 123 W. The average optical transmittance of AZO films is over 80% in the visible region. The lowest resistivity of 1.0×10-3Ω•cm is obtained under the plasma power of 220 W.

Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

2013 ◽  
Vol 873 ◽  
pp. 426-430
Author(s):  
Xian Wu Xiu ◽  
Li Xu ◽  
Cheng Qiang Zhang
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Hexagonal Structure ◽  
Visible Range ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sputtering Power

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE Ta-DOPED ITO FILMS BY ELECTRON-BEAM EVAPORATION

2010 ◽  
Vol 24 (32) ◽  
pp. 3089-3095 ◽  
Author(s):  
J. Y. HUANG ◽  
G. H. FAN ◽  
T. MEI ◽  
S. W. ZHENG ◽  
Q. L. NIU ◽  
...  
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Conductive Films ◽  
Atomic Force ◽  
Average Optical Transmittance ◽  
Ito Films

Tantalum-doped indium tin oxide ( Ta -doped ITO) transparent conductive films are deposited on glass substrates by electron-beam evaporation. The effects of different Ta concentrations and annealing temperatures on the structural, morphologic, electrical, and optical properties of Ta -doped ITO films are investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic bixbyite structure of indium oxide and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 1.54×10-4 Ω ·cm is obtained from the ITO film containing 0.2 wt% tantalum annealed at 500°C and the average optical transmittance is over 95% from 425 nm to 460 nm.

EFFECT OF THICKNESS ON THE PROPERTIES OF In-DOPED ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (07) ◽  
pp. 995-1003 ◽  
Author(s):  
L. P. PENG ◽  
L. FANG ◽  
X. F. YANG ◽  
Q. L. HUANG ◽  
F. WU ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Transparent Electrode ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Glass Substrates

In-doped zinc oxide ( ZnO:In ) thin films with thickness from 157 nm to 592 nm have been deposited on glass substrates by radio frequency (RF) magnetron sputtering. The effect of the film thickness on the structural, electrical and optical properties of ZnO:In thin films has been investigated. It is found that the films are hexagonal wurtzite structure with c-axis perpendicular to the substrate, and with increasing thickness, the crystallinity, the grains size and the conductivity of the films increases, but the strains along c-axis and the transmittance decrease. The decrease of the resistivity in a thicker film is attributed to the slight increase of the carrier concentration and the significant increase of Hall mobility. The transmittance of all the films is over 80% in the visible region (400–800 nm) and the band gap decrease with the increase of film thickness. The film with the thickness of around 303 nm has the resistivity of 6.07 × 10-3 Ω⋅ cm and the transmittance of 90% in the visible range. Based on the good conductivity and high transmittance, the ZnO:In films prepared by magnetron sputtering can be regarded as a potential transparent electrode.

EFFECTS OF SUBSTRATE TEMPERATURE ON THE DOPING CHARACTERISTICS OF Li-W CO-DOPED ZnO FILMS

2014 ◽  
Vol 21 (01) ◽  
pp. 1450003 ◽  
Author(s):  
YUEHUI HU ◽  
YICHUAN CHEN ◽  
XIAOHUA ZHANG ◽  
DEFU MA ◽  
JUNXIANG WANG ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Zno Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Co Doped

Li - W co-doped ZnO (LWZO) thin films were deposited on quartz glass substrates by RF magnetron sputtering technology. The properties of LWZO films deposited with varied substrate temperatures were investigated. When the substrate temperature was lower than 120°C — according to X-ray diffraction (XRD) patterns, films keep hexagonal wurtzite structure with the (002) plane as preferred orientation — the optical transmittance was higher than 85%. When the substrate temperature was higher than 120°C, the results of XPS and XRD show that W 6+ will work as donors, and the (101) peak appeared; the optical transmittance decreased slightly but still higher than 82%. Scanning electron microscope (SEM) and its two-dimensional Fourier transform images showed that films had smooth surface and columnar particles structure when the substrate temperature was lower than 120°C. The film surface became rougher and flaky-shaped particles structure could be observed when the substrate temperature was higher than 120°C. In addition, the lowest electrical resistivity of sample was 3.6 × 10-3 Ω ⋅ cm which was obtained at substrate temperature 240°C.

Influence of TiO2 content on microstructures and optoelectronic properties of titanium-doped ZnO nanofilms

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744069
Author(s):  
Zhenying Chen ◽  
Xiaowei Chen ◽  
Fei Li ◽  
Shoulei Xu ◽  
Wenhua Huang ◽  
...  
Keyword(s):  
Physical Property ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Optoelectronic Properties ◽  
Glass Substrates ◽  
Average Optical Transmittance ◽  
Crystal Properties ◽  
Initial Decrease ◽  
Property Measurement ◽  
Doped Zno

Thin films of TiO2-doped ZnO (TZO) with TiO2 contents from 0.5 to 3.0 wt.% were deposited on glass substrates by RF magnetron sputtering. The microstructures and optoelectronic properties of the TZO films were characterized by XRD, Hall effect analyzer, UV–VIS spectrophotometry and physical property measurement (PPMS-9). Results indicate that the microstructure and optoelectronic properties of TZO films are strongly affected by the TiO2 content. The best optoelectronic properties were obtained with the film having 2.0 wt.% TiO2. This film had superior crystal properties, high average optical transmittance (89.0%), and the lowest resistivity (9.58 × 10[Formula: see text] [Formula: see text] ⋅ cm). Furthermore, the resistivity of this film changed with temperature between 10 and 350 K, they experienced an initial decrease followed by an increase as the temperature increased.

RAMAN AND OPTOELECTRONIC PROPERTIES OF Zn1-xMgxO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2011 ◽  
Vol 18 (05) ◽  
pp. 189-195 ◽  
Author(s):  
Q. L. HUANG ◽  
L. FANG ◽  
H. B. RUAN ◽  
B. D. GUO ◽  
F. WU ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Frequency Shifts ◽  
X Ray ◽  
Mg Doping ◽  
Glass Substrates ◽  
Structure Surface ◽  
Mg Content

A series of Zn 1-x Mg x O (x = 0 ~ 0.16) films have been prepared on glass substrates by RF magnetron sputtering. The structure, surface morphology, composition, optical and electrical properties of the films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, UV-Vis spectrophotometer and Hall measurement, respectively. It reveals that the obtained films are uniform hexagonal wurtzite polycrystalline with grain size about 100 nm.The optical transmittance are over 80% and the band gap (Eg) has linear relationship with Mg content: Eg = 1.67x + 3.274 (eV) (0 < x < 0.16). The resistivity of the films increases with the increase of Mg content. The Raman spectra of the films show that the position of E2 peaks (473 cm-1) has not changed, but the A1(LO) mode (577 cm-1) frequency shifts to lower wavenumbers with the increase of Mg content, indicating that Mg -doping does not cause intensive lattice deformation, but results in the decrease of the carrier concentration, which is corresponding to the degradation of the conductivity of ZnMgO films with the increase of Mg content.

Crystallinity and Characterization of Rf-Magetron Sputtered ZnO-Doped (Zr0.8Sn0.2)TiO4 Thin Films on ITO/Glass Substrate

2012 ◽  
Vol 486 ◽  
pp. 345-349
Author(s):  
Cheng Hsing Hsu ◽  
Pai Chuan Yang ◽  
Wen Shiush Chen ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Morphological Characteristics ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

Microstructure, optical and electrical properties of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different argon-oxygen (Ar/O2) mixture have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the Ar/O2 ratio. Optical transmittance spectroscopy further revealed high transparency (over 70%) in the visible region of the spectrum. At an Ar/O2 ratio of 100/0 and a substrate temperature of 400°C, the ZnO-doped (Zr0.8Sn0.2)TiO2 films possess a dielectric constant of 44 at 10 MHz, a dissipation factor of 0.03 at 10 MHz, a leakage current density of 3.73×10-9 A/cm2.

MODULATION OF PTCDA NANOSTRUCTURE AND OPTICAL PROPERTY: DEPENDENCE ON GROWTH TEMPERATURE

NANO ◽  
2014 ◽  
Vol 09 (06) ◽  
pp. 1450068
Author(s):  
PANPAN GUO ◽  
YUYAN HAN ◽  
WENHUA ZHANG ◽  
LINGYUN LIU ◽  
KAI WANG ◽  
...  
Keyword(s):  
Optical Properties ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Potential Applications ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic ◽  
Tetracarboxylic Dianhydride

3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) nanostructures with different morphologies are prepared on glass substrates at different substrate temperature (Ts) in a molecular beam epitaxy (MBE) system. Scanning/transmission/scanning transmission electron microscopy (SEM/TEM/STEM), X-ray diffraction (XRD), selected area electron diffraction (SAED) and nanobeam diffraction (NBD) techniques are employed in the systematical characterizations of the nanostructures. It is found that the PTCDA nanosheets (NSs), nanowires and nanorods are facile to produce at Ts = 350° C , 330°C and 240°C, respectively; the continuous films are obtained at 180°C and 50°C. XRD studies indicate that only the α-phase polymorph is formed regardless of the Ts. SAED and NBD results show that the nanowire and NS are single crystalline. The optical properties of the prepared PTCDA nanostructures are also found to be influenced by Ts and are correlated with the crystal quality and size. PTCDA nanowires and NSs exhibit an obvious redshift and broadening in the adsorption spectra, and enhanced emission intensity. The improved optical properties facilitate potential applications of these nanostructures in organic optoelectronic devices.

Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Parameter ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Visible Range ◽  
Glass Substrates ◽  
Doped Zno

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

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