The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

This study reports the successful preparation of Cu (In, Ga)Se2(CIGS) thin film solar cells by ion beam sputtering with a chalcopyrite CIGS quaternary target. The films were fabricated with different beam currents. The thin films were characterized with X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and hall effect-measurement system to study the microstructures, composition, surface morphology and electrical properties, respectively. Experimental results show that both the films are chalcopyrite structure, the Ga/(In+Ga) ratio, Cu/(In+Ga) ratio and Se/(Cu+In+Ga) ratio are decrease with the beam currents increase, the surfaces morphology of the films are dense, and the resistivity of the film deposited with the beam current of 40mA is 0.56Ωcm, with a carrier concentration of 4.11Χ1018cm-3and mobility of 2.73cm2V-1s-1. The resulting film exhibited p-type conductivity.

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Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.1788 ◽

2007 ◽

Vol 336-338 ◽

pp. 1788-1790

Author(s):

Yu Ju Chen ◽

Wen Cheng J. Wei

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Ion Beam ◽

Ion Beam Sputtering ◽

X Ray Diffraction ◽

Sputtering Deposition ◽

X Ray ◽

Crystal Growth Process ◽

Transmission Electron ◽

Beam Sputtering

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

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Growth of Thin Films by UHV ION Beam Sputtering Deposition Technique

Erosion and Growth of Solids Stimulated by Atom and Ion Beams ◽

10.1007/978-94-009-4422-0_30 ◽

1986 ◽

pp. 457-460 ◽

Cited By ~ 1

Author(s):

C. Pellet ◽

C. Schwebel ◽

F. Meyer ◽

G. Gautherin

Keyword(s):

Thin Films ◽

Ion Beam ◽

Deposition Technique ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Beam Sputtering

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Ion-beam sputtering deposition of CsI thin films

Applied Physics A ◽

10.1007/s00339-004-3097-9 ◽

2004 ◽

Vol 80 (8) ◽

pp. 1789-1791 ◽

Cited By ~ 11

Author(s):

M.A. Nitti ◽

A. Valentini ◽

G.S. Senesi ◽

G. Ventruti ◽

E. Nappi ◽

...

Keyword(s):

Thin Films ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Beam Sputtering

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Optimization in fabricating bismuth telluride thin films by ion beam sputtering deposition

Thin Solid Films ◽

10.1016/j.tsf.2012.03.086 ◽

2012 ◽

Vol 520 (16) ◽

pp. 5245-5248 ◽

Cited By ~ 28

Author(s):

Z.H. Zheng ◽

P. Fan ◽

T.B. Chen ◽

Z.K. Cai ◽

P.J. Liu ◽

...

Keyword(s):

Thin Films ◽

Bismuth Telluride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Beam Sputtering

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ZnO thin films deposited by capillaritron ion beam sputtering deposition

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2009.06.102 ◽

2009 ◽

Vol 267 (17) ◽

pp. 2874-2877 ◽

Cited By ~ 3

Author(s):

Liang-Chiun Chao ◽

Dong-Yi Tsai ◽

Yu-Ren Shih

Keyword(s):

Thin Films ◽

Ion Beam ◽

Zno Thin Films ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Beam Sputtering

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Room temperature synthesis of boron nitride thin films by dual-ion beam sputtering deposition

Ceramics International ◽

10.1016/j.ceramint.2015.11.090 ◽

2016 ◽

Vol 42 (3) ◽

pp. 4171-4175 ◽

Cited By ~ 1

Author(s):

Z.F. Wu ◽

L. Guo ◽

K. Cheng ◽

F. Zhang ◽

R.F. Guan

Keyword(s):

Thin Films ◽

Boron Nitride ◽

Room Temperature ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Temperature Synthesis ◽

Sputtering Deposition ◽

Room Temperature Synthesis ◽

Beam Sputtering ◽

Dual Ion Beam Sputtering

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A Study on the Process of ZnO Thin Films Prepared by Ion Beam Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.233-235.2399 ◽

2011 ◽

Vol 233-235 ◽

pp. 2399-2402 ◽

Cited By ~ 2

Author(s):

Shen Jiang Wu ◽

Wei Shi ◽

Jun Hong Su ◽

Wen Qi Wang

Keyword(s):

Thin Films ◽

Orthogonal Experiment ◽

Ion Beam ◽

Experimental Result ◽

Zno Thin Films ◽

Ion Beam Sputtering ◽

Technological Parameters ◽

Sputtering Deposition ◽

Beam Sputtering ◽

Deposition Technology

Based on the ion beam sputtering deposition technology, we adopted the reactive sputtering deposition method to accomplish the coating on the glass substrata with ZnO thin films. We used the four-factor and three-level L9(34) orthogonal experiment to obtain the best technological parameters of deposited ZnO thin films: discharge voltage 3.5KV, oxygen current capacity 8SCCM, the coil current 8A, the distance between target and substrata 140mm. The purity of the deposited ZnO thin film is 85.77%, and it has the good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source is advanced and has a good application value, and the ion beam sputtering deposition technology can be used to deposit the preferred orientation thin films with good performance. The findings have provided the experimental result and the beneficial reference for the ion beam sputtering deposition research.

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