Nano Fabrication Technology of Selective Removal and Optical Assistance

2009 ◽  
Vol 79-82 ◽  
pp. 369-372
Author(s):  
Pai Shan Pa
Keyword(s):  
Thin Films ◽  
Complete Removal ◽  
Selective Removal ◽  
Production Costs ◽  
Color Filter ◽  
Nano Fabrication ◽  
Filter Surface ◽  
Removal Technology ◽  
Ito Thin Films ◽  
Color Filters

This study presents a new modus of selective removal technology and an excimer assistance on TFT-LCD above the five generation used to carry out the selective removal of nanostructures layers from optoelectronic flat panel displays’ color filter surface as well as the complete removal from the substrate of the ITO thin-films, RGB layer or resin BM layer. Displays’ color filters are produced using optoelectronic semiconductor fabrication techniques though the low yield during production can still be improved. Through the precise removal process of chemical etching and excimer assistance, the selective removals of different layers on top of color filter substrates will cut down the production costs. It can individually pick out and remove defective films or directly remove all films but the Cr layer or bare glass. Experimental results point out defective ITO thin-films, RGB layers, or resin BM layer can now be recycled with great precision. When the ITO proves difficult to remove, excimer-light can also be used to help with its removal. During the color filter recycle process the use of a 172nm excimer-light can remove stubborn film residues, effectively improving the quality of recycled color filters. This study offers a recovery module for defective diaplays’ color filters can be reused and fed back into the color filter production line, therefore provides many benefits in the industry of optoelectronic semiconductor.

Defects Removal Using a Triangular-Shape Designed Tool

2010 ◽  
Vol 297-301 ◽  
pp. 203-208
Author(s):  
Pai Shan Pa
Keyword(s):  
Indium Tin Oxide ◽  
Feed Rate ◽  
Electrochemical Etching ◽  
Removal Rate ◽  
Semiconductor Industry ◽  
Production Costs ◽  
Color Filter ◽  
Filter Surface ◽  
Triangular Shape ◽  
Ito Thin Films

A new triangular-shape designed tool as a cathode in microelectromechanical etching process is a precision nanoscale production of a reclamation system of Indium tin oxide (ITO) thin-films defects removal from optoelectronic flat panel displays’ color filter surface is demonstrated in the current study. Through the ultra-precise removal of the thin-film nanostructure, the optoelectronic semiconductor industry can effectively reclaim defective products, reducing production costs. In the current experiment, a large size triangular shape cathode is accompanied by a small gap-width between the cathode and the workpiece takes less time for the same amount of ITO removal. A higher feed rate of displays’ color filter or a small end radius of the cathode combined with enough electric power produces fast machining. Pulsed direct current can improve the effect of dregs discharge and is advantageous in association with a fast workpiece feed rate. However, it raises the current rating. A large flow rate of the electrolyte corresponds to a higher removal rate for the ITO nanostructure. The electrochemical etching just needs a short time to make the ITO remove removal easy and clean.

An Electrode Sets with a Cylindrical Cathode and a Platy Anode for Reclamation of TFT-LCD Surface

2014 ◽  
Vol 552 ◽  
pp. 341-344
Author(s):  
P.S. Pa
Keyword(s):  
Indium Tin Oxide ◽  
Electrochemical Etching ◽  
Removal Rate ◽  
Semiconductor Industry ◽  
Production Costs ◽  
Color Filter ◽  
Filter Surface ◽  
Major Interest ◽  
Ito Thin Films ◽  
High Feed

The low yield rate of ITO thin-films is well known in semiconductor production processes. In the current study, an electrode sets with a cylindrical cathode and a platy anode as a reclamation process for the nanoscale removal of the indium tin oxide (ITO) nanostructure from the color filter surface of TFT-LCD displays is presented. In the current experiment, the major interest lies in the features of the technology and the design of the cylindrical cathode and the platy anode for the electrochemical etching process. For this process a steep gradient of the platy anode provides large discharge mobility and a better removal effect. A thin platy anode, a small gap-width between the cylindrical cathode and the ITO surface, or a high flow rate of electrolyte corresponds to a higher removal rate of the ITO-layer. A large current flow combined with a high feed rate of the display also results in a fast removal rate. By establishing a recycling process for the ultra-precise removal of the thin-film nanostructure, the optoelectronic semiconductor industry can effectively recycle defective products with a reduction of both production costs and pollution.

Mechanism Design of ITO-Layer Removal from Color Filter of TFT-LCD

2008 ◽  
Vol 594 ◽  
pp. 1-6
Author(s):  
Pai Shan Pa
Keyword(s):  
Mechanism Design ◽  
Removal Rate ◽  
Low Cost ◽  
Negative Electrode ◽  
Production Costs ◽  
Color Filter ◽  
Recycling Process ◽  
Filter Surface ◽  
Major Interest ◽  
Short Time

A mechanism design for the recycling process for removing the ITO-layer from color filter surface of TFT-LCD is presented. The defect rate of the ITO-layer is easily existent through the processes of semiconductor production. By establishing a recycling process for the ultra-precise removal of the thin film microstructure, the semiconductor optoelectronic industry can effectively recycle defective products, reducing both production costs and pollution. In the current experiment, the major interest is the design mechanism features of the removal process for a thin layer of ITO. For the recycling processes, a high flow velocity of the electrolyte provides a larger discharge mobility and a better removal effect. A thin thickness of the negative-electrode, an adequate gapwidth between the negative-electrode and the workpiece, or a higher working temperature corresponds to a higher removal rate for the ITO-layer. An adequate feed rate of the color filter combined with enough electric power produces a fast removal rate. An effective mechanism design and a low-cost recycling process using the electrochemical removal requires quite a short time to make the ITO layer remove easily and cleanly.

Design of an Oblique Tool for the Nano Removal Process

2010 ◽  
Vol 118-120 ◽  
pp. 665-669
Author(s):  
Pai Shan Pa
Keyword(s):  
Indium Tin Oxide ◽  
Removal Rate ◽  
Semiconductor Industry ◽  
Production Costs ◽  
Color Filter ◽  
Recycling Process ◽  
Filter Surface ◽  
Removal Process ◽  
Major Interest ◽  
High Feed

A system design for a recycling process for the nano removal of the indium tin oxide (ITO) nanostructure from the color filter surface of TFT-LCD displays is presented. The low yield rate of ITO thin-films is well known in semiconductor production processes. By establishing a recycling process for the ultra-precise removal of the thin-film nanostructure, the optoelectronic semiconductor industry can effectively recycle defective products with a reduction of both production costs and pollution. In the current experiment, the major interest lies in the features of the technology and the design of an oblique cathode for the electrochemical removal process. For this process a steep gradient of the oblique cathode provides large discharge mobility and a better removal effect. A thin oblique cathode, a small gap-width between the cathode and the ITO surface, or a high flow rate of electrolyte corresponds to a higher removal rate of the ITO-layer. A large current flow combined with a high feed rate of the display also results in a fast removal rate.

scholarly journals Deposition of ITO Thin Films onto PMMA Substrates for Waveguide Based Biosensing Devices

2012 ◽  
Vol 17 ◽  
pp. 75-83 ◽  
Author(s):  
Sofia Azevedo ◽  
L. Diéguez ◽  
P. Carvalho ◽  
J.O. Carneiro ◽  
Vasco Teixeira ◽  
...  
Keyword(s):  
Thin Films ◽  
Research Work ◽  
Production Costs ◽  
Conducting Oxides ◽  
Design Concepts ◽  
Ito Thin Films ◽  
Sensitivity And Selectivity ◽  
Influence Of Substrate ◽  
Polymeric Substrates ◽  
Silicon Based

Biosensors’ research filed has clearly been changing towards the production of multifunctional and innovative design concepts to address the needs related with sensitivity and selectivity of the devices. More recently, waveguide biosensors, that do not require any label procedure to detect biomolecules adsorbed on its surface, have been pointed out as one of the most promising technologies for the production of biosensing devices with enhanced performance. Moreover the combination of optical and electrochemical measurements through the integration of transparent and conducting oxides in the multilayer structures can greatly enhance the biosensors’ sensitivity. Furthermore, the integration of polymeric substrates may bring powerful advantages in comparison with silicon based ones. The biosensors will have a lower production costs being possible to disposable them after use (“one use sensor chip”). This research work represents a preliminary study about the influence of substrate temperature on the overall properties of ITO thin films deposited by DC magnetron sputtering onto 0,5 mm thick PMMA sheets.

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

scholarly journals High quality ITO thin films grown by dc and RF sputtering without oxygen

2010 ◽  
Vol 43 (5) ◽  
pp. 055402 ◽  
Author(s):  
Ocal Tuna ◽  
Yusuf Selamet ◽  
Gulnur Aygun ◽  
Lutfi Ozyuzer
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
High Quality ◽  
Ito Thin Films
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