Electron Mobility Model for Tensile Strained-Si(101)

2014 ◽  
Vol 986-987 ◽  
pp. 131-135
Author(s):  
Jian An Wang ◽  
Meng Nan ◽  
Hui Yong Hu ◽  
He Ming Zhang
Keyword(s):  
Relaxation Time ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Mobility Model ◽  
Strained Si ◽  
Average Momentum ◽  
Intervalley Scattering ◽  
Momentum Relaxation

Nowadays, the strained-Si technology has been used to maintain the momentum of semiconductor scaling due to its enhancement performance result from the higher mobility. In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si (101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si (101) material is made using the average momentum relaxation time method described in Ref [1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.[1]

Research on Electron Mobility Model for Tensile Strained-Si(101) with Properties of Semiconducting Materials

2013 ◽  
Vol 676 ◽  
pp. 8-12
Author(s):  
Nan Meng ◽  
Hui Yong Hu ◽  
He Ming Zhang ◽  
Xu Jia Shi ◽  
Rong Xi Xuan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Mobility Model ◽  
Semiconducting Materials ◽  
Strained Si ◽  
Average Momentum ◽  
Intervalley Scattering ◽  
Momentum Relaxation

Abstract. Mobility is one of the most important properties of semiconductor material, and it has a great impact on the property of MOS devices.In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si(101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si(101) material is made using the average momentum relaxation time method described in Ref[1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.

An Analytic Model for Electron Mobility in Strained Si/Si1-xGex nMOSFETs

2011 ◽  
Vol 317-319 ◽  
pp. 1168-1171
Author(s):  
Bin Li ◽  
Hong Xia Liu ◽  
Jin Li
Keyword(s):  
Film Thickness ◽  
Electron Mobility ◽  
Phonon Scattering ◽  
Inversion Layer ◽  
Mobility Model ◽  
Strained Si ◽  
Limited Mobility ◽  
Wide Range ◽  
Normal Electric Field ◽  
Electron Transport Properties

In order to describe electron transport properties in inversion layer of strained Si/Si1-xGex nMOSFETs, a new analytic electron mobility model is proposed. The model not only takes into account the effect of germanium(Ge) content on phonon scattering-limited mobility and surface roughness-limited mobility, and but also includes the degradation effect of strained Si film thickness and temperature on the device mobility. For various Ge content and a wide range of normal electric field, temperature and strained Si film thickness, the model provides good agreement with the experimental data in references. In addition, the model can be expressed using the analytical expression and can be easily included in the device simulator.

Momentum relaxation of 2D electron gas due to near-surface acoustic phonon scattering

1999 ◽  
Vol 270 (3-4) ◽  
pp. 280-288 ◽  
Author(s):  
V.I. Pipa ◽  
N.Z. Vagidov ◽  
V.V. Mitin ◽  
M. Stroscio
Keyword(s):  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Electron Gas ◽  
Near Surface ◽  
2D Electron Gas ◽  
Momentum Relaxation

Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films

2013 ◽  
Vol 854 ◽  
pp. 29-34 ◽  
Author(s):  
Dmitry Osintsev ◽  
V. Sverdlov ◽  
Siegfried Selberherr
Keyword(s):  
Surface Roughness ◽  
Relaxation Time ◽  
Spin Relaxation ◽  
Momentum Space ◽  
Acoustic Phonon ◽  
Soi Mosfet ◽  
Momentum Relaxation ◽  
Strained Films ◽  
The Impact ◽  
Strong Spin

We consider the impact of the surface roughness and phonon induced relaxation on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space, which are responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentum relaxation time determining the electron mobility can only be increased by a factor of two.

Model of Electron Scattering of Strained Si /Si1-xGex (100)

2011 ◽  
Vol 110-116 ◽  
pp. 3338-3342
Author(s):  
Jian Jun Song ◽  
Hua Ying Wu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Heng Sheng Shan
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Golden Rule ◽  
Collision Term ◽  
Strained Si ◽  
Total Electron ◽  
Total Scattering ◽  
Scattering Rate ◽  
Term Approximation

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and intervalley phonon, the model of total scattering rate of strained Si/(100) Si1-xGex is established. Simulating of the scattering models with Matlab software, it was found that the total scattering rate of electron in strained Si/(100) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency, and that the total electron scattering rate of strained Si/(100) Si1-xGex decreases about 57% at most comparison with one of unstrained Si. The result can provide valuable references to the research of electron mobility of strained Si materials and the design of NMOS devices.

Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101)

2011 ◽  
Vol 181-182 ◽  
pp. 364-369
Author(s):  
Cheng Wang ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Hui Yong Hu
Keyword(s):  
Applied Stress ◽  
Electron Mobility ◽  
Physical Phenomenon ◽  
Mobility Model ◽  
Strained Si ◽  
Electron Effective Mass ◽  
Scattering Rate ◽  
Alloy Disorder ◽  
Strained Materials ◽  
Disorder Scattering

Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si1-xGex/Si (101), an analytical electron mobility model for biaxial compressive strained-Si1-xGex /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with increasing Ge fraction x, especially for [010] orientation expresses a sharp decrease. This physical phenomenon can be explained as: Although the applied stress (the higher the Ge fraction, the greater the applied stress) can enhance the electron mobility, alloy disorder scattering rate markedly increase. Overall the electron mobility decreases instead. The above result suggests that not all the mobilities for Si-based strained materials enhance with the stress applied. For the biaxial strained-SiGe material represented by Ge fraction, the effect of alloy disorder scattering on the enhancement of mobility must be concerned. The result can provide theoretical basis for the understanding of the improved physical characterizations and the enhanced mobility for Si-based strained materials.

Electron Mobility Model of Strained Si1-xGex(001)

2011 ◽  
Vol 181-182 ◽  
pp. 378-382
Author(s):  
Hui Yong Hu ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Bin Shu
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Golden Rule ◽  
Mobility Model ◽  
Collision Term ◽  
Strained Si ◽  
Scattering Rate ◽  
Kp Theory

Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGexmaterials and the design of devices.

scholarly journals Intrinsic and Extrinsic Charge Transport in CH3NH3PbI3 Perovskites Predicted from First-Principles

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Tianqi Zhao ◽  
Wen Shi ◽  
Jinyang Xi ◽  
Dong Wang ◽  
Zhigang Shuai
Keyword(s):  
Charge Transport ◽  
Electron Mobility ◽  
First Principles ◽  
Phonon Scattering ◽  
Single Layer ◽  
Impurity Scattering ◽  
Hole Mobility ◽  
Single Layer Graphene ◽  
Device Structures ◽  
Charged Impurity Scattering

Abstract Both intrinsic and extrinsic charge transport properties of methylammonium lead triiodide perovskites are investigated from first-principles. The weak electron-phonon couplings are revealed, with the largest deformation potential (~ 5 eV) comparable to that of single layer graphene. The intrinsic mobility limited by the acoustic phonon scattering is as high as a few thousands cm2 V−1 s−1 with the hole mobility larger than the electron mobility. At the impurity density of 1018 cm−3, the charged impurity scattering starts to dominate and lowers the electron mobility to 101 cm2 V−1 s−1 and the hole mobility to 72.2 cm2 V−1 s−1. The high intrinsic mobility warrants the long and balanced diffusion length of charge carriers. With the control of impurities or defects as well as charge traps in these perovskites, enhanced efficiencies of solar cells with simplified device structures are promised.

Electron Mobility Model for Strained-Si Devices

2005 ◽  
Vol 52 (4) ◽  
pp. 527-533 ◽  
Author(s):  
S. Dhar ◽  
H. Kosina ◽  
V. Palankovski ◽  
S.E. Ungersbock ◽  
S. Selberherr
Keyword(s):  
Electron Mobility ◽  
Mobility Model ◽  
Strained Si
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