Study of the Sintering Kinetics of Silicon Nitride Containing Ceria and Alumina Additives

2001 ◽  
Vol 189-191 ◽  
pp. 120-125 ◽  
Author(s):  
J. Marchi ◽  
José Carlos Bressiani ◽  
Ana Helena A. Bressiani
Keyword(s):  
Silicon Nitride ◽  
Sintering Kinetics ◽  
Kinetics Of

The Milling Time Effect on Sintering Kinetics of Silicon Nitride Based Composites

2009 ◽  
Vol 409 ◽  
pp. 369-372
Author(s):  
Orsolya Koszor ◽  
Csaba Balázsi
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Milling Time ◽  
Nitrogen Pressure ◽  
Nitride Phase ◽  
Sintering Kinetics ◽  
Kinetics Of ◽  
Low Nitrogen

We have investigated the influence of the milling time on the structure and mechanical properties of the nanocomposite, as well as the effect of grain size on the sintering kinetics (α to β silicon nitride phase transformation). As we observed, by increasing the milling time the mechanical properties of the ceramics may be improved. The reason of this improvement is partly due to the α-Si3N4 to β-Si3N4 transformation facilitated by the smaller grain size, on the other hand it is due to the better dispersion of the carbon nanotubes. The X-ray measurements confirmed that in the case of samples milled for 5 hours, even when sintered at 1700°C, low nitrogen pressure (2MPa) and without holding time, a faster phase transformation occurs, resulting in improved mechanical properties.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Effect of aluminate additions on the isothermal sintering kinetics of mechanically activated corundum

2007 ◽  
Vol 43 (2) ◽  
pp. 153-155
Author(s):  
N. F. Kosenko ◽  
N. V. Filatova ◽  
A. A. Shiganov
Keyword(s):  
Sintering Kinetics ◽  
Kinetics Of

Initial sintering kinetics of non-stoichiometric CeO2−x

2021 ◽  
Vol 272 ◽  
pp. 115369
Author(s):  
Masashi Watanabe ◽  
Takayuki Seki
Keyword(s):  
Sintering Kinetics ◽  
Kinetics Of

Densification kinetics of silicon nitride hot pressed with ceria additions

1980 ◽  
Vol 5 (4-5) ◽  
pp. 267-288 ◽  
Author(s):  
G.N. Babini ◽  
A. Bellosi ◽  
P. Vincenzini
Keyword(s):  
Silicon Nitride ◽  
Kinetics Of

The Origin of Slow States at the Interface of a-Si:H and Silicon Nitride

1986 ◽  
Vol 70 ◽  
Author(s):  
R. A. Street ◽  
C. C. Tsai
Keyword(s):  
Silicon Nitride ◽  
Composition Dependence ◽  
Nitride Layer ◽  
Charge Storage ◽  
Localization Radius ◽  
Transient Photoconductivity ◽  
Kinetics Of

ABSTRACTTransient photoconductivity is used to investigate the origin of slow states near the interface of a-Si:H and silicon nitride. A graded composition of the nitride layer near the interface greatly increases the density of slow states. We deduce that slow states are bulk nitride traps and that the magnitude of charge storage is largely determined by the composition dependence of the localization radius of electrons within these traps. The kinetics of charge storage and release are found to be very different and are interpreted in terms of an activation step at the interface.

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