Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method
2007 ◽
Vol 336-338
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pp. 146-148
Keyword(s):
Sol Gel
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Nd-doped bismuth titanate Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 260 kV/cm, Pr and Ec of the BNT film with x=0.5 annealed at 650oC are 19 μC/cm2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3×1010 read/write cycles.
2008 ◽
Vol 368-372
◽
pp. 91-94
2012 ◽
Vol 23
(9)
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pp. 1711-1714
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2012 ◽
Vol 64
(3)
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pp. 711-717
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2011 ◽
Vol 197-198
◽
pp. 1781-1784
2008 ◽
Vol 51
(1)
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pp. 10-15
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