Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC

2004 ◽  
Vol 457-460 ◽  
pp. 865-868 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Francesco La Via ◽  
A. Baeri ◽  
Vito Raineri ◽  
Lucia Calcagno ◽  
...  
2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Caroline Bonafos ◽  
Sylvie Schamm ◽  
Pascal Normand ◽  
G. Ben Assayag

AbstractThe effect of thermal treatments in oxidizing ambient on the structural and electrical properties of low-energy Si-implanted thin SiO2 layers which previously suffered or not high temperature annealing in inert ambient was investigated. Based on TEM examination, charge trapping evaluation and FN conduction analysis of the resulting Si-NC SiO2 matrices, a model taking into account the healing of excess silicon atoms introduced by implantation and the generation of Si interstitials by oxidation above and below the viscoelastic temperature of SiO2 is proposed.


2004 ◽  
Vol 96 (8) ◽  
pp. 4313-4318 ◽  
Author(s):  
F. Roccaforte ◽  
F. La Via ◽  
A. Baeri ◽  
V. Raineri ◽  
L. Calcagno ◽  
...  

2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan

Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 


2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
Naisargi Kanabar ◽  
Keval Gadani ◽  
V. G. Shrimali ◽  
Khushal Sagapariya ◽  
K. N. Rathod ◽  
...  

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