Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures

2008 ◽  
Vol 600-603 ◽  
pp. 541-544
Author(s):  
Alexander A. Lebedev ◽  
Pavel L. Abramov ◽  
Nina V. Agrinskaya ◽  
Ven I. Kozub ◽  
Alexey N. Kuznetsov ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Epitaxial Films ◽  
Epitaxial Layers ◽  
Temperature Range ◽  
Galvanomagnetic Properties ◽  
Magneto Resistance

3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiC substrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiC heterostructures in temperature range 1,4 – 300 К. At helium temperatures it was founded low samples resistance and negative magneto-resistance in week magnetic field ( ~ 1 T). Analysis of obtained results shows, that low samples resistance can be connected with metal-isolation junction in 3C-SiC epitaxial films..

Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method

2000 ◽  
Vol 15 (12) ◽  
pp. 2602-2605 ◽  
Author(s):  
T. W. Kang ◽  
S. H. Park ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
High Energy ◽  
Epitaxial Films ◽  
Epitaxial Layers ◽  
Porous Si ◽  
Step Method ◽  
High Quality ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Step Growth

A new approach was used for combining GaN and porous Si with the goal of producing high-quality GaN epitaxial layers for optoelectronic integrated circuit devices based on Si substrates. Reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), photoluminescence (PL), and Van der Pauw–Hall effect measurements were performed to investigate the structural, optical, and electrical properties of the GaN epitaxial films grown on porous Si(100) by plasma-assisted molecular-beam epitaxy with a two-step method. The RHEED patterns were streaky with clear Kikuchi lines, which was direct evidence for layer-by-layer two-dimensional growth of GaN epitaxial layers on porous Si layers. The XRD curves showed that the grown layers were GaN(0001) epitaxial films. The results of the XRD and the PL measurements showed that the crystallinities of the GaN epilayers grown on porous Si by using a two-step growth were remarkably improved because the porous Si layer reduced the strains in the GaN epilayers by sharing them with the Si substrates. Hall-effect measurements showed that the mobility of the GaN active layer was higher than that of the GaN initial layer. These results indicate that high-quality GaN epitaxial films grown on porous Si(100) by using two-step growth hold promise for potential applications in new kinds of optoelectronic monolithic and ultralarge integrated circuits.

MAGNETORESISTANCE AND HALL EFFECT IN ORIENTED SINGLE CRYSTAL SAMPLES OF n-TYPE INDIUM ANTIMONIDE

1961 ◽  
Vol 39 (3) ◽  
pp. 452-467 ◽  
Author(s):  
C. H. Champness
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Single Crystal ◽  
Hall Effect ◽  
Air Temperature ◽  
Indium Antimonide ◽  
Room Temperature ◽  
Magneto Resistance ◽  
Longitudinal Magnetoresistance ◽  
Oriented Single Crystal

Measurements have been made on the angular dependence of the magneto-resistance effect and the Hall effect on oriented n-type indium antimonide samples. The measurements were taken at room temperature and liquid air temperature using a magnetic field strength of about 5000 gauss. Besides evidence of inhomogeneity, the results show directional dependence of the longitudinal magnetoresistance. The largest value was found in the [Formula: see text] direction. This can be explained if, in addition to electrons at the central minimum, there is some filling of the [Formula: see text] minima in k space.

scholarly journals Temperature error of Hall-effect and magnetoresistive commercial magnetometers

2017 ◽  
Vol 66 (3) ◽  
pp. 625-630 ◽  
Author(s):  
Michał Nowicki ◽  
Maciej Kachniarz ◽  
Roman Szewczyk
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Measurement System ◽  
Temperature Error ◽  
Temperature Influence ◽  
Temperature Drift ◽  
Temperature Range ◽  
Special Measurement ◽  
Hall Effect Sensors ◽  
The Magnetic Field

AbstractThe paper presents a special measurement system for investigation of temperature influence on the indication of commercially available sensors of the magnetic field. Utilizing the developed system, several magnetoresistive and Hall-effect sensors were investigated within the temperature range from −30°C to 70°C. The obtained results indicate that sensitivity of most of the investigated sensors is unaffected, except the basic magnetoresistive device. However, Hall-effect sensors exhibit considerable temperature drift, regardless of the manufacturer.

scholarly journals Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем

2021 ◽  
Vol 63 (5) ◽  
pp. 606
Author(s):  
О.Б. Романова ◽  
C.C. Аплеснин ◽  
Л.В. Удод
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Hall Effect ◽  
Charge Carriers ◽  
Hall Constant ◽  
Temperature Range ◽  
Current Voltage ◽  
Semiconductor Compounds ◽  
Current Voltage Characteristics ◽  
Ohmic Conductivity

The electrical properties and the Hall effect in semiconductor compounds Ag0.01Mn0.99S and Tm0.01Mn0.99S have been studied in the temperature range 80–400 K in a magnetic field of 12 kOe. The mechanism of conduction is established, which depends on the type of doping and concentration from the current - voltage characteristics. At the replacement of manganese by silver, the Mott type was found, and the replacement by thulium causes ohmic conductivity. The mobility and type of charge carriers are found from the Hall constant.

Planar Hall Effect of GaMnAs

2004 ◽  
Vol 449-452 ◽  
pp. 1069-1072
Author(s):  
K.H. Kim ◽  
Kyung Jong Lee ◽  
Dae Joon Kim ◽  
H.J. Kim ◽  
Young Eon Ihm
Keyword(s):  
Hall Effect ◽  
Molecular Beam ◽  
Easy Axis ◽  
Epitaxial Films ◽  
Resistance Ratio ◽  
Hall Resistance ◽  
Planar Hall Effect ◽  
Magneto Resistance ◽  
Very High ◽  
Gamnas Layer

Anisotropy magneto-resistance and planar Hall-effect of ferromagnetic GaMnAs epitaxial films were investigated. The films were grown on 2 o off-cut GaAs (001) substrate in an optimized growth condition via low temperature molecular beam epitaxy. The GaMnAs layer revealed an easy axis along the (2x4) reconstruction direction of the substrate or along the off-cut direction. The large value of the anisotropy magneto-resistance ratio of ~7 % was realized by a well-alignment of the easy axis of the homogeneous ferromagnetic GaMnAs layer with the current. It also gives a very high planar Hall resistance ratio of ~500 %.

Transporteigenschaften von Bi70Sb30 / Transport Proper ties of Bi70Sb30

1972 ◽  
Vol 27 (11) ◽  
pp. 1639-1645 ◽  
Author(s):  
G. Schneider ◽  
R. Trinks
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Field Dependence ◽  
Electrical Resistance ◽  
Magnetic Field Dependence ◽  
Transverse Field ◽  
Zone Melting ◽  
Trigonal Axis ◽  
Ettingshausen Effect ◽  
Magneto Resistance

Abstract Crystals of the composition Bi70Sb30 , undoped and doped with the donor Te and the acceptor Sn, were made by zone melting. Specimens were prepared with the long edges parallel to the bisectrix, the binary or the trigonal axis. Transport properties (electrical resistance, transverse magneto-resistance, Hall effect, thermoelectric power, longitudinal and transverse Nernst-Ettingshausen effect) were measured for specimens with different orientation and doping in the temperature range from 8 to 300 °K. Investigations of magnetic field dependence of some properties and of the anisotropy of magnetoresistance in a transverse field of different directions were made.

The Network of Photoelectromagnetics Methods For Determination of Recombination and Diffusion Parameters of Charge Carriers in Epitaxial Films Mercury-Cadmium-Telluride p-Type

2011 ◽  
Vol 6 (1) ◽  
pp. 104-115
Author(s):  
Vladimir Ya. Kostyuchenko ◽  
Dmitriy Yu. Protasov
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Epitaxial Films ◽  
Charge Carriers ◽  
Diffusion Parameters ◽  
P Type ◽  
And Diffusion

In this paper the network of photoelectromagnetic methods of definition recombination and diffusion parameters developed for p-type epitaxial mercury-cadmium-tellurium films at temperature 77÷125 K is offered. The network includes the methods based on measurement of photoconductivity in a magnetic field for Voight and Faradey geometry, photomagnetic effect, Hall effect and magnitoresistance

Magnetic-field and temperature-dependent Hall effect in UPd2Al3 epitaxial films

1994 ◽  
Vol 235-240 ◽  
pp. 2439-2440 ◽  
Author(s):  
M. Huth ◽  
J. Hessert ◽  
M. Jourdan ◽  
A. Kaldowski ◽  
H. Adrian
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Epitaxial Films ◽  
Temperature Dependent

scholarly journals The quantum Hall effect in the absence of disorder

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Kyung-Su Kim ◽  
Steven A. Kivelson
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Finite Interval ◽  
Quantum Hall ◽  
Wigner Crystal ◽  
Quasi Particle ◽  
Hall Conductance ◽  
Finite Extent

AbstractIt is widely held that disorder is essential to the existence of a finite interval of magnetic field in which the Hall conductance is quantized, i.e., for the existence of “plateaus” in the quantum Hall effect. Here, we show that the existence of a quasi-particle Wigner crystal (QPWC) results in the persistence of plateaus of finite extent even in the limit of vanishing disorder. Several experimentally detectable features that characterize the behavior in the zero disorder limit are also explored.

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