Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
2013 ◽
Vol 740-742
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pp. 201-204
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Keyword(s):
The Mean
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The growth of homoepitaxial layers on off-oriented 6H-SiC substrates proceeds via step flow growth. Such epilayers can exhibit irregularities like step bunching, splicing or crossover of steps. The effects of the substrate off-orientation and growth temperature show an influence on formation of surface irregularities. The mean features seem to be given by the growth mode competition of two-dimensional growth to the step-flow growth.
Keyword(s):
Keyword(s):
2005 ◽
Vol 274
(3-4)
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pp. 418-424
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Keyword(s):
Keyword(s):
2014 ◽
Vol 778-780
◽
pp. 210-213
Keyword(s):
Keyword(s):