Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements

2016 ◽  
Vol 858 ◽  
pp. 380-383 ◽  
Author(s):  
Stefania Privitera ◽  
Grazia Litrico ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Francesco La Via
Keyword(s):  
Spatial Distribution ◽  
Electrical Properties ◽  
Electrical Transport ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Minority Carrier Lifetime ◽  
Induced Currents ◽  
Hecd Laser

In this paper we have studied the connection between crystal quality and electrical transport in 4H-SiC by simultaneous micro-photoluminescence (μPL) and photocurrent (PC) measurements. We have used a focused HeCd laser at 325 nm (i.e. above bandgap) to measure with a spatial resolution of few microns both the μPL spectra and the I-V characteristics in 4H-SiC/Ni Schottky diodes. We found that the PC signal acquired along a defect can give information on its spatial distribution in depth. The minority carrier lifetime has been also estimated and its dependence on the emission wavelength has been determined for several stacking faults.

Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis

2015 ◽  
Vol 821-823 ◽  
pp. 257-260
Author(s):  
Stefania Privitera ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Ruggero Anzalone ◽  
Francesco La Via
Keyword(s):  
Electrical Properties ◽  
Spatial Resolution ◽  
Electrical Transport ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Crystal Quality ◽  
Extended Defects ◽  
Hecd Laser ◽  
Photoluminescence Peak

In this paper we have studied the connection between crystal quality and electrical transport in 4H-SiC by simultaneous micro-photoluminescence (μPL) and micro-photocurrent (μPC) measurements. We have used a focused HeCd laser at 325nm (i.e. above bandgap) to measure with a spatial resolution of few microns both the μPL spectra and the I-V characteristics in 4H-SiC/NiSi Schottky diodes. We found that extended defects exhibiting a photoluminescence peak located at 2.9eV (i.e single Shockley or bar shaped stacking faults) can produce an increase of the measured PC whereas other defects, such as the (4,4) stacking fault, can be considered as ‘killer defects’, strongly reducing the photocurrent.

Intrinsic Point Defects and Their Control in Silicon Crystal Growth and Wafer Processing

MRS Bulletin ◽  
2000 ◽  
Vol 25 (6) ◽  
pp. 28-32 ◽  
Author(s):  
R. Falster ◽  
V. V. Voronkov
Keyword(s):  
Integrated Circuit ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Minority Carrier Lifetime ◽  
Defect Engineering ◽  
Ic Manufacturing ◽  
Microelectronics Industry ◽  
Wafer Processing

Silicon produced for the microelectronics industry is far and away the purest and most perfect crystalline material manufactured today. It is fabricated routinely and in very large volumes. Many of the advances in integrated-circuit (IC) manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering. Transition-metal contamination is a case in point. Essentially all practical problems (minority carrier lifetime, metal precipitation, stacking faults, etc.) associated with metal contaminants have largely been solved through advances in crystal purity.

Research on Effects of Annealing and Al Gettering on Electrical Properties of Upgraded Metallurgical Grade Multicrystalline Silicon

2012 ◽  
Vol 581-582 ◽  
pp. 483-486 ◽  
Author(s):  
Jun Feng Zhang ◽  
Wen Hui Ma ◽  
Xiu Hua Chen ◽  
Cong Zhang ◽  
Kui Xian Wei
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Metal Impurities ◽  
Back Scattering ◽  
Optimal Effect

Annealing and Al gettering were performed on upgraded metallurgical grade multicrystalline silicon (UMG multi-Si) wafers with a purity of 99.999%. The dislocation and grain boundaries of samples were characterized by optical microscopy and electron back scattering diffraction (EBSD), respectively. The minority carrier lifetime and resistivity of the Si wafers were measured using microwave photoconductance decay and four-point probe techniques, respectively. The results show that the number of dislocations in Si wafers reduced obviously after annealing and Al gettering for 2 hours at 600～1100°C. The proportion of Σ3 grain boundary increases. But the minority carrier lifetime and resistivity of the Si wafers after annealing decreases. However, the minority carrier lifetime and resistivity of the Si wafers after Al gettering increases firstly and then decreases with increasing of the annealing temperature. It is considered that the metal impurities determine electrical properties of UMG multi-Si wafers rather than dislocations and grain boundary. However, Al gettering can enhances the properties of Si wafers effectively and the optimal effect of Al gettering has been achieved at 800°C.

The Effects of Impurity Codoping on the Electrical Properties of Erbium Ions in Crystalline Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
S. Libertino ◽  
S. Coffa ◽  
R. Mosca ◽  
E. Gombia
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Erbium Ions ◽  
Donor Behaviour ◽  
Energetic Position

AbstractWe have investigated the effects of oxygen codoping and thermal annealing on the deep level spectrum and carrier lifetime of Er implanted crystalline Si. It is found that oxygen codoping produces a dramatic modification in the concentration and energetic position of Er-related deep levels in the Si band gap. In particular the formation of Er-O complexes is shown to produce a promotion from deep to shallow levels. This effect is the major responsible of the enhancement of Er donor behaviour in presence of oxygen and also produces a large increase in the minority carrier lifetime

The Effect of Hydrogenation on the Electrical Properties of Crystalline Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
Jacques I. Pankove
Keyword(s):  
Electrical Properties ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Lower Surface ◽  
Dangling Bonds ◽  
Defect Passivation ◽  
Different Temperatures

ABSTRACTHydrogen ties Si dangling bonds at defects as well as near impurities. Defect passivation leads to dramatically lower surface recombination and increased minority carrier lifetime. Dopant neutralization increases the resistivity of the crystal and the mobility of carriers. The neutralization of donors and acceptors is optimum at different temperatures. Deep levels can also be neutralized.

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