scholarly journals Lamella Silicon Solar Cell under Both Temperature and Magnetic Field: Width Optimum Determination

2020 ◽  
Vol 12 (04) ◽  
pp. 43-55
Author(s):  
Dibor Faye ◽  
Sega Gueye ◽  
Mor Ndiaye ◽  
Mamadou Lamine Ba ◽  
Ibrahima Diatta ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell

scholarly journals Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

2014 ◽  
Vol 04 (02) ◽  
pp. 84-92 ◽  
Author(s):  
Amadou Diao ◽  
Ndeye Thiam ◽  
Martial Zoungrana ◽  
Gokhan Sahin ◽  
Mor Ndiaye ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Diffusion Coefficient ◽  
Solar Cell ◽  
Applied Magnetic Field ◽  
Silicon Solar Cell ◽  
Equivalent Circuits

scholarly journals Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

2019 ◽  
Vol 11 (10) ◽  
pp. 355-361
Author(s):  
Seydina Diouf ◽  
Mor Ndiaye ◽  
Ndeye Thiam ◽  
Youssou Traore ◽  
Mamadou Lamine Ba ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Diffusion Coefficient ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Minority Carrier ◽  
Carrier Diffusion ◽  
Influence Of Temperature

scholarly journals Theoretical Study of a Bifacial Silicon Solar Cell Front Side Illuminated: Magnetic Field Effect on the Recombination Velocities Inducing the Short Circuit and Limiting the Open Circuit

2021 ◽  
Vol 11 (2) ◽  
pp. 1-7
Author(s):  
A. D. Péné ◽  
◽  
F. I. Barro ◽  
M. Kamta ◽  
L. Bitjoka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Magnetic Field Effect ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Cell Front ◽  
Static Regime ◽  
Recombination Velocity

The aim of this work is to present a study of the recombination velocities at the junction initiating the shortcircuit (Sfsc) and limiting the open circuit (Sfoc) of a silicon solar cell under magnetic field in the static regime. From the continuity equation, the density of minority charge carriers in the base, the photocurrent density, and the phototension are determined. The study of the photocurrent density and the phototension, as a function of the junction recombination velocity, makes it possible to determine the recombination velocities at the junction initiating the short-circuit and limiting the open circuit respectively. From the profile of the variation of the photocurrent density and of the phototension as a function of the junction recombination velocity, a technique for determining the junction recombination velocities initiating the short circuit situation and limiting the open circuit is presented.

scholarly journals Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination

2017 ◽  
Vol 08 (10) ◽  
pp. 325-335 ◽  
Author(s):  
Idrissa Sourabié ◽  
Issa Zerbo ◽  
Martial Zoungrana ◽  
Dioari Ulrich Combari ◽  
Dieudonné Joseph Bathiebo
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Incidence Angle

scholarly journals THE EFFECT OF MAGNETIC FIELD ON THE EFFICIENCY OF A SILICON SOLAR CELL UNDER AN INTENSE LIGHT CONCENTRATION

2017 ◽  
Vol 11 (2) ◽  
pp. 133-138 ◽  
Author(s):  
Zoungrana Martial ◽  
Zerbo Issa ◽  
Soro Boubacar ◽  
Savadogo Mahamadi ◽  
Tiedrebeogo Sanna ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Light Concentration ◽  
Intense Light

I-V Characteristics for Bifacial Silicon Solar Cell under a Magnetic Field

2007 ◽  
Vol 18-19 ◽  
pp. 303-312 ◽  
Author(s):  
Saïdou Madougou ◽  
F. Made ◽  
M.S. Boukary ◽  
G. Sissoko
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Numerical Simulations ◽  
Continuity Equation ◽  
Silicon Solar Cell ◽  
Base Region ◽  
Minority Carriers

In this work, the influence of magnetic field on I-V characteristics of bifacial silicon solar cell n+-p-p+ structure is studied under constant multispectral illumination. After resolution of continuity equation related to photogenerated minority carriers’ density in the base region of this cell, MATLAB numerical simulations of excess minority carriers’, photocurrent densities and junction photovoltage profiles, have been developed with magnetic field in the bulk of the base region. In the same way, the IV characteristics have been studied with magnetic field. It has been demonstrated that the I–V characteristics decreased. It also has shown how the I–V characteristics changed.

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