scholarly journals Dry Etching Properties of HfAlO3Thin Film with Addition O2gas Using a High Density Plasma

2014 ◽  
Vol 15 (3) ◽  
pp. 164-169
Author(s):  
Jong-Chang Woo ◽  
Yong-Bong Lee ◽  
Jeong-Ho Kim
Keyword(s):  
Dry Etching ◽  
High Density ◽  
Density Plasma

Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

1996 ◽  
Vol 5 (2) ◽  
pp. 193-199 ◽  
Author(s):  
G S Oehrlein ◽  
P J Matsuo ◽  
M F Doemling ◽  
N R Rueger ◽  
B E E Kastenmeier ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Dry Etching ◽  
Surface Interactions ◽  
High Density ◽  
Plasma Surface ◽  
Plasma Surface Interactions ◽  
Density Plasma

Dry etching technology of Cr and MoSi layers using high-density plasma source

2001 ◽  
Author(s):  
Hyuk-Joo Kwon ◽  
Kwang-Sik Oh ◽  
Byung-Soo Chang ◽  
Boo-Yeon Choi ◽  
Kyung-Ho Park ◽  
...  
Keyword(s):  
Plasma Source ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma

Dry etching of copper thin films in high density plasma of CH3COOH/Ar

2019 ◽  
Vol 672 ◽  
pp. 55-61 ◽  
Author(s):  
Jin Su Ryu ◽  
Eun Taek Lim ◽  
Jae Sang Choi ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma

High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
K. P. Lee ◽  
K. B. Jung ◽  
A Srivastava ◽  
D. Kumar ◽  
R. K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Single Layer ◽  
Dry Etching ◽  
High Density ◽  
Pattern Transfer ◽  
Removal Rates ◽  
Etch Rates ◽  
Density Plasma ◽  
Maximum Removal

AbstractHigh density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

Wafer-level fabrication of a high-silica v-groove for fiber-optic packaging using deep dry-etching with a dual-frequency high-density plasma

2015 ◽  
Vol 67 (7) ◽  
pp. 1179-1186
Author(s):  
Tae-Won Ha ◽  
Gi-Seok Heo ◽  
Bum-Ho Choi ◽  
Young-Baek Kim ◽  
Jin-Kyoung Oh ◽  
...  
Keyword(s):  
Fiber Optic ◽  
Dry Etching ◽  
High Density ◽  
Dual Frequency ◽  
Wafer Level ◽  
High Silica ◽  
Density Plasma

A study on dry etching for profile and selectivity of ZrO2 thin films over Si by using high density plasma

2009 ◽  
Vol 517 (14) ◽  
pp. 4246-4250 ◽  
Author(s):  
Jong-Chang Woo ◽  
Sang-Gi Kim ◽  
Jin-Gun Koo ◽  
Gwan-Ha Kim ◽  
Dong-Pyo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma

Dry etching of N-face GaN using two high-density plasma etch techniques

2007 ◽  
Vol 4 (1) ◽  
pp. 200-203 ◽  
Author(s):  
F. Rizzi ◽  
K. Bejtka ◽  
F. Semond ◽  
E. Gu ◽  
M. D. Dawson ◽  
...  
Keyword(s):  
Dry Etching ◽  
High Density ◽  
Plasma Etch ◽  
Density Plasma
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