Selective dry etching of oxide films for spacer applications in a high density plasma

1996 ◽  
Vol 14 (6) ◽  
pp. 3470 ◽  
Author(s):  
Lynn R. Allen
Keyword(s):  
Oxide Films ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma

Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

1996 ◽  
Vol 5 (2) ◽  
pp. 193-199 ◽  
Author(s):  
G S Oehrlein ◽  
P J Matsuo ◽  
M F Doemling ◽  
N R Rueger ◽  
B E E Kastenmeier ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Dry Etching ◽  
Surface Interactions ◽  
High Density ◽  
Plasma Surface ◽  
Plasma Surface Interactions ◽  
Density Plasma

Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma

2007 ◽  
Author(s):  
Hirokazu Asahara ◽  
Atsutoshi Inokuchi ◽  
Kohei Watanuki ◽  
Masaki Hirayama ◽  
Akinobu Teramoto ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxide Films ◽  
High Density ◽  
Zinc Oxide Films ◽  
Density Plasma

Dry etching technology of Cr and MoSi layers using high-density plasma source

2001 ◽  
Author(s):  
Hyuk-Joo Kwon ◽  
Kwang-Sik Oh ◽  
Byung-Soo Chang ◽  
Boo-Yeon Choi ◽  
Kyung-Ho Park ◽  
...  
Keyword(s):  
Plasma Source ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma

Dry etching of copper thin films in high density plasma of CH3COOH/Ar

2019 ◽  
Vol 672 ◽  
pp. 55-61 ◽  
Author(s):  
Jin Su Ryu ◽  
Eun Taek Lim ◽  
Jae Sang Choi ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Dry Etching ◽  
High Density ◽  
Density Plasma

High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
K. P. Lee ◽  
K. B. Jung ◽  
A Srivastava ◽  
D. Kumar ◽  
R. K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
Single Layer ◽  
Dry Etching ◽  
High Density ◽  
Pattern Transfer ◽  
Removal Rates ◽  
Etch Rates ◽  
Density Plasma ◽  
Maximum Removal

AbstractHigh density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

2006 ◽  
Vol 253 (5) ◽  
pp. 2752-2757 ◽  
Author(s):  
W.T. Lim ◽  
L. Stafford ◽  
Ju-Il Song ◽  
Jae-Soung Park ◽  
Y.W. Heo ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Plasma Etching ◽  
Oxide Films ◽  
High Density ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide ◽  
Density Plasma
Sign in / Sign up

Export Citation Format

Share Document