scholarly journals Nyquist Model based Thermal Noise AnalysisFrom Passive Components to CMOS Circuits

2021 ◽  
Vol 11 (1) ◽  
pp. 1-8
Author(s):  
F. Sandoval Ibarra ◽  
◽  
S. Ortega Cisneros
Keyword(s):  
Integrated Circuits ◽  
Analog Circuits ◽  
Thermal Noise ◽  
Noise Analysis ◽  
Circuit Theory ◽  
General Purpose ◽  
Cmos Integrated Circuits ◽  
Cmos Circuits ◽  
Passive Components ◽  
Ultimate Purpose

The analysis of thermal noise in network components that have resistive properties is presented. Noise analysis, based on the Nyquist model, is calculated as the rms (voltage or current equivalent) noise generated by a transimpedance, which is the concept used by general-purpose circuit simulators like Spice. It shows how this concept is used and understood in RC circuits, and how to evaluate its effect in analog circuits, particularly in the design of CMOS integrated circuits. It is shown that the magnitude of the noise generated by a transistor is not of interest, but the net effect of all sources of thermal noise in circuits and systems, fundamentally, when the miniaturization of the transistor implies reducing the value of the supply voltages. The ultimate purpose of this contribution is to highlight the importance of noise analysis using fundamentals of circuit theory and identify the variables under the designer's control to minimize their effect on the performance of the circuits under development.

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

High-temperature leakage current suppression in CMOS integrated circuits

1989 ◽  
Vol 25 (17) ◽  
pp. 1133 ◽  
Author(s):  
S.E. Nordquist ◽  
J.W. Haslett ◽  
F.N. Trofimenkoff
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Leakage Current ◽  
Cmos Integrated Circuits

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

scholarly journals Differential Temperature Sensors: Review of Applications in the Test and Characterization of Circuits, Usage and Design Methodology

Sensors ◽  
2019 ◽  
Vol 19 (21) ◽  
pp. 4815 ◽  
Author(s):  
Enrique Barajas ◽  
Xavier Aragones ◽  
Diego Mateo ◽  
Josep Altet
Keyword(s):  
Integrated Circuits ◽  
Analog Circuits ◽  
Temperature Sensor ◽  
Design Methodology ◽  
Dynamic Range ◽  
Simple Procedure ◽  
High Dynamic Range ◽  
Temperature Sensors ◽  
Time Variability ◽  
Linear Power Amplifier

Differential temperature sensors can be placed in integrated circuits to extract a signature of the power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper first discusses the singularity that differential temperature sensors provide with respect to other sensor topologies, with circuit monitoring being their main application. The paper focuses on the monitoring of radio-frequency analog circuits. The strategies to extract the power signature of the monitored circuit are reviewed, and a list of application examples in the domain of test and characterization is provided. As a practical example, we elaborate the design methodology to conceive, step by step, a differential temperature sensor to monitor the aging degradation in a class-A linear power amplifier working in the 2.4 GHz Industrial Scientific Medical—ISM—band. It is discussed how, for this particular application, a sensor with a temperature resolution of 0.02 K and a high dynamic range is required. A circuit solution for this objective is proposed, as well as recommendations for the dimensions and location of the devices that form the temperature sensor. The paper concludes with a description of a simple procedure to monitor time variability.

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