scholarly journals Effect of thermal annealing on the structural, optical and microstructural properties of AgInSe2 thin films

2021 ◽  
Vol 1 (1) ◽  
pp. 109-113
Author(s):  
Rozalin Panda ◽  
Ramakanta Naik ◽  
Udai. P. Singh ◽  
Naresh. C. Mishra
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Microstructural Properties

Effect of thermal annealing on the surface and the microstructural properties of ZnO thin films grown on p-Si (100) substrates

2004 ◽  
Vol 262 (1-4) ◽  
pp. 72-77 ◽  
Author(s):  
T.W. Kim ◽  
K.H. Lee ◽  
H.S. Lee ◽  
J.Y. Lee ◽  
S.G. Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Zno Thin Films ◽  
Microstructural Properties

Effect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method

2007 ◽  
Vol 253 (8) ◽  
pp. 4041-4044 ◽  
Author(s):  
S.Y. Kim ◽  
H.S. Lee ◽  
I.S. Chung ◽  
Y.J. Park ◽  
J.Y. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Microstructural Properties ◽  
Si Substrates

Effect of thermal annealing on the structural, optical and microstructural properties of a-SiC thin films

2019 ◽  
Vol 5 (3) ◽  
pp. 438-444
Author(s):  
Sam Baskar ◽  
Abu Bakr Azam ◽  
Akshay S ◽  
Nikhil S. Thomas ◽  
M Devesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Microstructural Properties

Effect Of Thermal Annealing On The Structural, Optical And Microstructural Properties Of AgInSe2 Thin Films

2016 ◽  
Vol 1 (1) ◽  
pp. 109-113 ◽  
Author(s):  
Rozalin Panda ◽  
Ramakanta Naik ◽  
Udai P. Singh ◽  
Naresh C. Mishra
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Microstructural Properties

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

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