c-Axis-tilted ScAlN films grown on silicon substrates for surface acoustic wave devices

ScAlN films are currently being investigated for their potential use in surface acoustic wave (SAW) devices for next-generation mobile networks because of their high piezoelectricity. This paper describes the numerical simulation of SAW propagation in c-axis-tilted ScAlN films on silicon substrates and a fabrication technique for preparing c-axis-tilted ScAlN films on silicon substrates. The electromechanical coupling coefficient K 2 of SAW propagating in the ScAlN film/silicon substrate increased due to the c-axis tilt angle. The maximum K 2 value is approximately 3.90%. This value is 2.6 times the maximum K 2 value of the c-axis-oriented ScAlN film/silicon substrate structure. The c-axis-tilted ScAlN films with an Sc concentration of 40% were prepared on a silicon substrate via RF magnetron sputtering based on the self-shadowing effect, and the maximum c-axis tilt angle was 57.4°. These results indicate that this device structure has potential for SAW device applications with well-established micromachining technology derived from silicon substrates.

Figure of Merit Enhancement of Laterally Vibrating RF-MEMS Resonators via Energy-Preserving Addendum Frame

This paper examines a new technique to improve the figure of merit of laterally vibrating RF-MEMS resonators through an energy-preserving suspended addendum frame structure using finite element analysis. The proposed suspended addendum frame on the sides of the resonant plate helps as a mechanical vibration isolator from the supporting substrate. This enables the resonator to have a low acoustic energy loss, resulting in a higher quality factor. The simulated attenuation characteristics of the suspended addendum frame are up to an order of magnitude larger than those achieved with the conventional structure. Even though the deployed technique does not have a significant impact on increasing the effective electromechanical coupling coefficient, due to a gigantic improvement in the unloaded quality factor, from 4106 to 51,136, the resonator with the suspended frame achieved an 11-folds improvement in the figure of merit compared to that of the conventional resonator. Moreover, the insertion loss was improved from 5 dB down to a value as low as 0.7 dB. Furthermore, a method of suppressing spurious mode is demonstrated to remove the one incurred by the reflected waves due to the proposed energy-preserving structure.

Influence of Etching Trench on Keff2 of Film Bulk Acoustic Resonator

As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient (Keff2), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the Keff2 of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the Keff2 of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The Keff2 of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the Keff2 of resonators to meet the requirements of different filter bandwidths.

Analysis of design parameters of round-window stimulating type electromagnetic transducer by a nonlinear lumped parameter model of implanted human ear

<abstract> <p>Round-window stimulating transducer is a new solution to treat mixed hearing loss. To uncover the factors affecting the round-window stimulation's performance, we investigated the influence of four main design parameters of round-window stimulating type electromagnetic transducer. Firstly, we constructed a human ear nonlinear lumped parameter model and confirmed its validity by comparing the stapes responses predicted by the model with the experimental data. Following this, an electromagnetic transducer's mechanical model, which simulates the floating mass transducer, was built and coupled to the human ear model; thereby, we established a nonlinear lumped parameter model of implanted human ear under round-window stimulation and verified its reliability. Finally, based on this model, the influences of the four main design parameters, i.e., the excitation voltage, the electromechanical coupling coefficient, the support stiffness, and the preload force, were analyzed. The results show that the change of excitation voltage does not alter the system's natural frequency. Chaotic motion occurs when the electromechanical coupling coefficient is small. Meanwhile, the stapes displacement appears to increase firstly and then decrease with the increase of the electromechanical coupling coefficient. The increase of the support stiffness enlarges the resonance frequency of the stapes displacement and reduces the stapes displacement near the resonance frequency, deteriorating the transducer's hearing compensation at low frequency. The preload force can improve the transducer's hearing compensation performance in mid-high frequency region.</p> </abstract>

An Experimental and Theoretical Study of Impact of Device Parameters on Performance of AlN/Sapphire-Based SAW Temperature Sensors

The impact of device parameters, including AlN film thickness (hAlN), number of interdigital transducers (NIDT), and acoustic propagation direction, on the performance of c-plane AlN/sapphire-based SAW temperature sensors with an acoustic wavelength (λ) of 8 μm, was investigated. The results showed that resonant frequency (fr) decreased linearly, the quality factor (Q) decreased and the electromechanical coupling coefficient (Kt2) increased for all the sensors with temperature increasing from −50 to 250 °C. The temperature coefficients of frequency (TCFs) of sensors on AlN films with thicknesses of 0.8 and 1.2 μm were −65.57 and −62.49 ppm/°C, respectively, indicating that a reduction in hAlN/λ favored the improvement of TCF. The acoustic propagation direction and NIDT did not obviously impact the TCF of sensors, but they significantly influenced the Q and Kt2 of the sensors. At all temperatures measured, sensors along the a-direction exhibited higher fr, Q and Kt2 than those along the m-direction, and sensors with NIDT of 300 showed higher Q and Kt2 values than those with NIDT of 100 and 180. Moreover, the elastic stiffness of AlN was extracted by fitting coupling of modes (COM) model simulation to the experimental results of sensors along different directions considering Euler transformation of material parameter-tensors. The higher fr of the sensor along the a-direction than that along the m-direction can be attributed to its larger elastic stiffness c11, c22, c44, and c55 values.

Preparation, Structure, and Electrical Properties of Cobalt-Modified Bi(Sc3/4In1/4)O3–PbTiO3–Pb(Mg1/3Nb2/3)O3 High-Temperature Piezoelectric Ceramics

Cobalt-modified 0.40Bi(Sc3/4In1/4)O3–0.58PbTiO3–0.02Pb(Mg1/3Nb2/3)O3 ceramics (abbreviated as BSI–PT–PMN–xCo) were produced by conventional two-step solid-state processing. The phase structure, micro structure morphology, and electrical properties of BSI–PT–PMN–xCo were systematically studied. The introduction of Co ions exerted a significant influence on the structure and electrical properties. The experiment results demonstrated that Co ions entered the B-sites of the lattice, resulting in slight lattice distortion and a smaller lattice constant. The average grain size increased from ~1.94 μm to ~2.68 μm with the increasing Co content. The optimized comprehensive electrical properties were obtained with proper Co-modified content 0.2 wt.%. The Curie temperature (Tc) was 412 °C, the piezoelectric constant (d33) was 370 pC/N, the remnant polarization (Pr) was 29.2 μC/cm2, the relatively dielectric constant (εr) was 1450, the planar electromechanical coupling coefficient (kp) was 46.5, and the dielectric loss (tanδ) was 0.051. Together with the enhanced DC resistivity of 109 Ω cm under 300 °C and good thermal stability, BSI–PT–PMN–0.2Co ceramic is a promising candidate material for high-temperature piezoelectric applications.

Surface acoustic wave temperature properties in alpha-GeO2 crystal

In this study, the surface acoustic wave (SAW) temperature properties in flux-grown α-GeO2 crystal are numerically investigated. It is shown that the SAW velocity temperature change substantially depends only on the temperature coefficient of three elastic constants: C66, C44 and C14 for crystal cuts and wave propagation directions, where SAW has high electromechanical coupling coefficient. The SAW temperature coefficient of delay (TCD) for these crystal cuts are in the range from -40 ppm /°C to -70 ppm /°C. In contrast to alpha-quartz, the surface wave TCD values are not equal to zero in Z-, Y- , and Z- rotated cuts of α-GeO2 single crystal. Its values are comparable in the magnitude with the surface wave TCD values in lithium tantalate. In the crystal grown from the melt, the interdigital transducer (IDT) conductance has two times larger amplitude than that in hydrothermally grown a-GeO2. The leaky acoustic wave excited by IDT on Z+120°-cut and wave propagation direction along the X-axis, has an electromechanical coupling coefficient 5 times less than that for surface wave.

Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

In this study, aluminum gallium nitride (AlGaN) thin films are used as the piezoelectric layers to fabricate solidly mounted resonators (SMR) for high frequency acoustic wave devices. AlGaN film is deposited on a Bragg reflector, composed of three pairs of Mo and SiO2 films, through a reactive radio frequency (RF) magnetron co-sputtering system at room temperature. The optimized deposition parameters of AlGaN film have a sputtering power of 175 W for Al target, sputtering power of 25 W for GaN target, N2 flow ratio (N2/Ar + N2) of 60%, and sputtering pressure of 10 mTorr. The obtained AlGaN film has a smooth surface, uniform crystal grains, and strong c-axis orientation. The contents of Al and Ga in the AlGaN film, analyzed by energy dispersive X-ray spectroscopy (EDS) are 81% and 19%, respectively. Finally, the frequency response S11 of the obtained SMR device shows that the center frequency is 3.60 GHz, the return loss is about −8.62 dB, the electromechanical coupling coefficient (kt2) is 2.33%, the quality factor (Q) value is 96.93 and the figure of merit (FoM) value is 2.26.

FEM Analysis of Various Multilayer Structures for CMOS Compatible Wearable Acousto-Optic Devices

Lately, wearable applications featuring photonic on-chip sensors are on the rise. Among many ways of controlling and/or modulating, the acousto-optic technique is seen to be a popular technique. This paper undertakes the study of different multilayer structures that can be fabricated for realizing an acousto-optic device, the objective being to obtain a high acousto-optic figure of merit (AOFM). By varying the thicknesses of the layers of these materials, several properties are discussed. The study shows that the multilayer thin film structure-based devices can give a high value of electromechanical coupling coefficient (k2) and a high AOFM as compared to the bulk piezoelectric/optical materials. The study is conducted to find the optimal normalised thickness of the multilayer structures with a material possessing the best optical and piezoelectric properties for fabricating acousto-optic devices. Based on simulations and studies of SAW propagation characteristics such as the electromechanical coupling coefficient (k2) and phase velocity (v), the acousto-optic figure of merit is calculated. The maximum value of the acousto-optic figure of merit achieved is higher than the AOFM of all the individual materials used in these layer structures. The suggested SAW device has potential application in wearable and small footprint acousto-optic devices and gives better results than those made with bulk piezoelectric materials.

Piezoelectric A15B16C17 Compounds and Their Nanocomposites for Energy Harvesting and Sensors: A Review

Interest in pyroelectrics and piezoelectrics has increased worldwide on account of their unique properties. Applications based on these phenomena include piezo- and pyroelectric nanogenerators, piezoelectric sensors, and piezocatalysis. One of the most interesting materials used in this growing field are A15B16C17 nanowires, an example of which is SbSI. The latter has an electromechanical coupling coefficient of 0.8, a piezoelectric module of 2000 pC/N, and a pyroelectric coefficient of 12 × 10−3 C/m2K. In this review, we examine the production and properties of these nanowires and their composites, such as PAN/SbSI and PVDF/SbSI. The generated electrical response from 11 different structures under various excitations, such as an impact or a pressure shock, are presented. It is shown, for example, that the PVDF/SbSI and PAN/SbSI composites have well-arranged nanowires, the orientation of which greatly affects the value of its output power. The power density for all the nanogenerators based upon A15B16C17 nanowires (and their composites) are recalculated by use of the same key equation. This enables an accurate comparison of the efficiency of all the configurations. The piezo- and photocatalytic properties of SbSI nanowires are also presented; their excellent ability is shown by the high reaction kinetic rate constant (7.6 min−1).