scholarly journals Numerical Simulation of Solar Cells and Solar Cell Characterization Methods: the Open-Source on Demand Program AFORS-HET

Solar Energy ◽  
10.5772/8073 ◽  
2010 ◽  
Author(s):  
Rolf Stangl ◽  
Caspar Leendertz ◽  
Jan Haschke
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Open Source ◽  
Characterization Methods ◽  
Cell Characterization ◽  
On Demand

scholarly journals Numerical Simulation of a Textured and Untextured Photovoltaic Solar Cell: Comparative study

2021 ◽  
Vol 03 (01) ◽  
pp. 104-114
Author(s):  
Karim Salim ◽  
◽  
M.N Amroun ◽  
K Sahraoui ◽  
W Azzoui ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Comparative Study ◽  
Silicon Solar Cell ◽  
The Other ◽  
Surface Parameters ◽  
Cell Efficiency ◽  
Photovoltaic Solar Cell ◽  
A Cell

Increasing the efficiency of solar cells relies on the surface of the solar cell. In this work, we simulated a textured silicon solar cell. This simulation allowed us to predict the values of the surface parameters such as the angle and depth between the pyramids for an optimal photovoltaic conversion where we found the Icc: 1.783 (A) and Vco: 0.551 (V) with a cell efficiency of about 13.56%. On the other hand, we performed another simulation of a non-textured solar cell to compare our values and found Icc: 1.623 (A) and Vco: 0.556 (V) with an efficiency of about 12.76%.

Band Discontinuity Effect on a-Si:H and a-SiGe:H Solar Cells

1995 ◽  
Vol 377 ◽  
Author(s):  
X. Xu ◽  
A. Banerjee ◽  
J. Yang ◽  
S. Guha ◽  
K. Vasanth ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Valence Band ◽  
Cell Performance ◽  
Experimental Results ◽  
Microcrystalline Silicon ◽  
Solar Cell Performance ◽  
Single Junction ◽  
P Type

ABSTRACTThe electrical bandgap of microcrystalline silicon (μc-Si:H) p type layers used in a-Si:H alloy solar cells and the band edge discontinuities between μc-Si:H and a-Si:H alloys have been determined by internal photoemission measurements. The bandgap of μc-Si:H is found to be in the range of 1.50 to 1.57 eV, and the discontinuities at the conduction and the valence band edges are 0 to 0.07 and 0.26 to 0.35 eV, respectively. Use of these parameters in the numerical simulation of single-junction a-Si:H and a-SiGe:H alloy solar cells is found to predict experimental results of solar cell performance.

scholarly journals Numerical simulation of perovskite solar cell with different material as electron transport layer using SCAPS-1D Software

2021 ◽  
Vol 24 (3) ◽  
pp. 341-347
Author(s):  
K. Bhavsar ◽  
◽  
P.B. Lapsiwala ◽  
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Electron Transport ◽  
Perovskite Solar Cells ◽  
Acid Methyl Ester ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer

Perovskite solar cells have become a hot topic in the solar energy device area due to high efficiency and low cost photovoltaic technology. However, their function is limited by expensive hole transport material (HTM) and high temperature process electron transport material (ETM) layer is common device structure. Numerical simulation is a crucial technique in deeply understanding the operational mechanisms of solar cells and structure optimization for different devices. In this paper, device modelling for different perovskite solar cell has been performed for different ETM layer, namely: TiO2, ZnO, SnO2, PCBM (phenyl-C61-butyric acid methyl ester), CdZnS, C60, IGZO (indium gallium zinc oxide), WS2 and CdS and effect of band gap upon the power conversion efficiency of device as well as effect of absorber thickness have been examined. The SCAPS 1D (Solar Cell Capacitance Simulator) has been a tool used for numerical simulation of these devices.

Numerical Simulation of Nc-Silicon PIN Solar Cells with AMPS-1D

2013 ◽  
Vol 712-715 ◽  
pp. 309-312 ◽  
Author(s):  
Ming Kun Xu
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
High Performance ◽  
Fill Factor ◽  
High Efficiency ◽  
Program Package

P+a-SiC/ I nc-Si/N+a-Si structure solar cells is simulated by AMPS-1D program package to characterize the new thin film solar cell. In order to analyze the characteristics of the device, the thickness of layer are considered. The results show that the thickness of layer and the value of layer have a great effect on the conversion efficiency. Our results suggest a high performance P a-SiC/ I nc-Si/N a-Si structure solar cells with high efficiency of 14.411% and fill factor of 0.738. The simulation result is potentially valuable in exploring gradual bandgap P+a-SiC/I nc-Si/N+a-Si structure solar cells with high performance.

scholarly journals Tandem Solar Cells Based on Cu2O and c-Si Subcells in Parallel Configuration: Numerical Simulation

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Mihai Răzvan Mitroi ◽  
Valerică Ninulescu ◽  
Laurenţiu Fara
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Output Power ◽  
High Efficiency ◽  
Low Cost ◽  
Maximum Output Power ◽  
Model Parameters ◽  
Maximum Output ◽  
Parallel Configuration

A tandem solar cell consisting of a bottom c-Si high-efficiency subcell and a top low-cost Cu2O subcell in parallel configuration is evaluated for the first time by a use of an electrical model. A numerical simulation based on the single-diode model of the solar cell is performed. The numerical method determines both the model parameters and the parameters of the subcells and tandem from the maximization of output power. The simulations indicate a theoretical limit value of the tandem power conversion efficiency of 31.23% at 298 K. The influence of temperature on the maximum output power is analyzed. This tandem configuration allows a great potential for the development of a new generation of low-cost high-efficiency solar cells.

scholarly journals SLALOM: Open-source, portable, and easy-to-use solar cell optimizer. Application to the design of InGaN solar cells

2018 ◽  
Vol 9 ◽  
pp. 13 ◽  
Author(s):  
Sidi Ould Saad Hamady ◽  
Nicolas Fressengeas
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Open Source ◽  
High Performance ◽  
Geometrical Parameters ◽  
Multivariate Approach ◽  
Design And Optimization ◽  
Simulation Engine ◽  
Code Structure ◽  
The One

The design and optimization of novel structures is an essential part of the next-generation solar cells development. Indeed, the technological steps involved in the development of high-performance solar cells involve a huge set of interdependent physical and geometrical parameters: layers thicknesses, dopings, compositions, and defect characteristics. In this work, we propose a new open-source and free solar cell optimizer: SLALOM − for SoLAr ceLl multivariate OptiMizer − that implements a rigorous multivariate approach, which improves from the one-parameter-at-a-time procedure that is traditionally used in the field to a state-of-the-art multivariate approach. Applied to indium gallium nitride (InGaN) solar cells, it shows its potential to become a useful tool for the development of novel solar cells. SLALOM is implemented to be extended to any semiconductor simulation engine. Several models for solar cells have been implemented in SLALOM, including, for instance, InGaN. One can adapt these models to any solar cell technology by changing the parameter set, the here proposed generic code structure remaining unchanged.

scholarly journals NUMERICAL SIMULATION OF SOLAR CELL WITH TiO2/CH3NH3SnI3/Cu2O STRUCTURE

2020 ◽  
Author(s):  
Aleksandr Sayenko ◽  
Sergey Malyukov ◽  
Aleksandr Palii
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Perovskite Solar Cells ◽  
Improve Efficiency

The work is devoted to the numerical simulation of perovskite solar cells with the TiO2/CH3NH3SnI3/Cu2O structure to optimize their design and improve efficiency.

scholarly journals Comparative Performance Analysis of Lead-Free Perovskites Solar Cells by Numerical Simulation

2021 ◽  
Author(s):  
Shristy Srivast ◽  
Anand Kumar Singh ◽  
Prashant Kumar ◽  
Basudev Pradhan
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Lead Free ◽  
Research Progress ◽  
Electron Transport Layer ◽  
Perovskite Materials ◽  
The Impact

Abstract Research of lead-free perovskite based solar cells has gained speedy and growing attention with urgent intent to eliminate toxic lead in perovskite materials. The main purpose of this work is to supplement the research progress with comparative­­ analysis of different lead-free perovskite based solar cells by numerical simulation method using solar cell capacitance simulator (SCAPS-1D) software. In this work, the device simulation is carried out in the n-i-p configuration of FTO/[6,6]-Phenyl-C61-butyric acidmethyl ester (PCBM) /Perovskite layer/ Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine(PTAA)/Au using six different lead-free perovskite materials. The impact of different perovskite materials layers including hole and electron transport layer thickness, doping concentration on solar cell performances has thoroughly been investigated and optimized. CsSnI3 based perovskite solar cell shows the highest power conversion efficiency of 28.97 % among all the lead-free perovskite based devices. This clearly indicates that it’s possible to achieve high-performance lead-free perovskite solar cells experimentally at par with lead based perovskite solar cells in future research.

scholarly journals Analysis of The Efficiency In Sb2Se3 Thin-Film Solar Cells Using Alternative Buffer Layers In n-p and n-i-p Structures By Numerical Simulation.

2021 ◽  
Author(s):  
F Ayala-Mato ◽  
O Vigil-Galán ◽  
Maykel Courel ◽  
M. M. Nicolás-Marín
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Defect Density ◽  
Hole Transport ◽  
Inorganic Materials ◽  
Band Alignment ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Solar Cell Performance

Abstract Antimony Sulfide (Sb2Se3) Solar Cells are considered a promising emerging photovoltaic devices technology. However, the best reported experimental efficiency (9.2%) is well below the theoretical limit of 30%. In this research is demonstrated, by numerical simulation, that using different buffer or electron transport layers (ETL) and device structures (n-p or n-i-p) can significantly increase the solar cell performance. The study is based on two underlying considerations: the use of inorganic materials to facilitate the manufacturing process and the analysis of the simulation parameters that adjust to the experimental conditions in which the cells can be processed. In the n-p structures, the use of single layers and bilayers as ETL was evaluated and the possible mechanism that explain the electrical parameters of the solar cell were discussed. Especial attention was made in the role of interfacial state density and band alignment in the ETL/Sb2Se3 interface. In addition, the n-i-p structure was studied by adding a hole transport layer (HTL). An improvement in open circuit voltage (Voc) is observed compared with n-p structure. Finally, the behavior of Voc and efficiency vs thickness of the ETL and Sb2Se3 layers was analyzed. The results show that using alternative ETLs a significant improve in Voc and efficiency could be achieved for n-p and n-i-p structures. After thickness optimization and taking account a moderate interface defect density, values of Voc and efficiency higher than 600 mV and 15 % were respectively obtained.

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