Control of Non-Metallic Inclusions in High Quality Saw Wires

2018 ◽  
Author(s):  
M. Jiang ◽  
Y. Wang ◽  
X. Wang ◽  
K. Wang
Keyword(s):  
High Quality ◽  
Metallic Inclusions

Online Electromagnetic Filtration of Molten Aluminum Using a Multistage Separator System

2015 ◽  
Vol 15 (1) ◽  
pp. 89-92
Author(s):  
Da Shu ◽  
Jun Wang ◽  
Baode Sun
Keyword(s):  
Magnetic Field ◽  
Electromagnetic Field ◽  
Molten Aluminum ◽  
External Electromagnetic Field ◽  
Grain Refiner ◽  
High Quality ◽  
Inclusion Content ◽  
Average Efficiency ◽  
Filtration System ◽  
Metallic Inclusions

AbstractElectromagnetic filtration is a new method for the removal of micro-sized non-metallic inclusions from molten aluminum by means of an external electromagnetic field. This paper introduces a multistage electromagnetic filtration system using alternating magnetic field and its application in semi-continuous casting of aluminum billets. The inclusion content was quantitatively determined through PoDFA sampling and analysis. Results showed that the average efficiency of the removal of inclusion particles and oxide films could reach 93.8% and 80.9%, respectively. The content of inclusion particles without grain refiner could be decreased to a level of 0.02 mm2/kg aluminum, satisfying the requirements in terms of the cleanliness of high-quality aluminum products.

scholarly journals Trapped mode resonances in metalo-dielectric structures with electric asymmetry materials

2011 ◽  
Vol 60 (1) ◽  
pp. 85-93
Author(s):  
Mihai Rotaru ◽  
Jan Sykulski
Keyword(s):  
Frequency Selective Surfaces ◽  
Trapped Modes ◽  
High Quality ◽  
Trapped Mode ◽  
Dielectric Substrates ◽  
Symmetric Structure ◽  
Resonant Modes ◽  
Metallic Inclusions ◽  
Dielectric Structures ◽  
Sub Wavelength

Trapped mode resonances in metalo-dielectric structures with electric asymmetry materialsThis paper investigates the possibility of exciting high quality trapped resonant modes on frequency selective surfaces consisting of identical sub-wavelength metallic inclusions (symmetrically split rings) with no structural asymmetry but exhibitting electrical asymmetry. The electrical symmetry is broken by using different dielectric substrates. The existence of such anti-symmetric trapped mode on geometrical symmetric structure is demonstrated through numerical simulation. Numerical results suggest that the high quality factor observed for these resonant modes is achieved via weak coupling between the "trapped modes" and free space which enables the excitation of these modes.

scholarly journals Numerical Simulation on Motion Behavior of Inclusions in the Lab-Scale Electroslag Remelting Process with a Vibrating Electrode

Metals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1784
Author(s):  
Fang Wang ◽  
Boyang Sun ◽  
Zhongqiu Liu ◽  
Baokuan Li ◽  
Shuo Huang ◽  
...  
Keyword(s):  
Vibration Frequency ◽  
Slag Layer ◽  
Continuous Phase ◽  
Filling Ratio ◽  
Electroslag Remelting ◽  
Discrete Phase Model ◽  
High Quality ◽  
Removal Ratio ◽  
Metallic Inclusions ◽  
Motion Behavior

In order to meet the requirement of high-quality ingots, the vibrating electrode technique in the electroslag remelting (ESR) process has been proposed. Non-metallic inclusions in ingots may cause serious defects and deteriorate mechanical properties of final products. Moreover, the dimension, number and distribution of non-metallic inclusions should be strictly controlled during the ESR process in order to produce high-quality ingots. A transient 2-D coupled model is established to analyze the motion behavior of inclusions in the lab-scale ESR process with a vibrating electrode, especially under the influence of the vibration frequency, current, slag layer thickness, and filling ratio, as well as type and diameter of inclusions. Simulation model of inclusions motion behavior is established based on the Euler-Lagrange approach. The continuous phase including metal and slag, is calculated based on the volume of fluid (VOF) method, and the trajectory of inclusions is tracked with the discrete phase model (DPM). The vibrating electrode is simulated by the user-defined function and dynamic mesh. The results show that when the electrode vibration frequency is 0.25 Hz or 1 Hz, the inclusions will gather on one side of the slag layer. When it increases from 0.25 Hz to 1 Hz, the removal ratio of 10 μm and 50 μm inclusions increases by 5% and 4.1%, respectively. When the current increases from 1200 A to 1800 A, the flow following property of inclusions in the slag layer becomes worse. The removal ratio of inclusions reaches the maximum value of 92% with the current of 1500 A. The thickness of slag layer mainly affects the position of inclusions entering the liquid-metal pool. As the slag layer thickens, the inclusions removal ratio increases gradually from 82.73% to 85.91%. As the filling ratio increases, the flow following property of inclusions in the slag layer is enhanced. The removal ratio of 10 μm inclusions increases from 94.82% to 97%. However, for inclusions with a diameter of 50 μm, the maximum removal ratio is 96.04% with a filling ratio of 0.46. The distribution of 50 μm inclusions is significantly different, while the distribution of 10μm inclusions is almost similar. Because of the influence of a vibrating electrode, 10 μm Al2O3 and MnO have a similar removal ratios of 81.33% and 82.81%, respectively.

Some problems of objective-prism spectra classification

1966 ◽  
Vol 24 ◽  
pp. 51-52
Author(s):  
E. K. Kharadze ◽  
R. A. Bartaya
Keyword(s):  
Short Wave ◽  
High Quality ◽  
Stellar Spectra ◽  
Objective Prism

The unique 70-cm meniscus-type telescope of the Abastumani Astrophysical Observatory supplied with two objective prisms and the seeing conditions characteristic at Mount Kanobili (Abastumani) permit us to obtain stellar spectra of a high quality. No additional design to improve the “climate” immediately around the telescope itself is being applied. The dispersions and photographic magnitude limits are 160 and 660Å/mm, and 12–13, respectively. The short-wave end of spectra reaches 3500–3400Å.

A non-cyanide method of electropolishing silver

1978 ◽  
Vol 36 (1) ◽  
pp. 146-147
Author(s):  
R. L. Lyles ◽  
S. J. Rothman ◽  
W. Jäger
Keyword(s):  
Electron Microscopy ◽  
Sulphuric Acid ◽  
Methyl Alcohol ◽  
Health Hazards ◽  
Silver Alloy ◽  
High Quality ◽  
Silver Alloys ◽  
Free Sample ◽  
Specimen Quality ◽  
Standard Techniques

Standard techniques of electropolishing silver and silver alloys for electron microscopy in most instances have relied on various CN recipes. These methods have been characteristically unsatisfactory due to difficulties in obtaining large electron transparent areas, reproducible results, adequate solution lifetimes, and contamination free sample surfaces. In addition, there are the inherent health hazards associated with the use of CN solutions. Various attempts to develop noncyanic methods of electropolishing specimens for electron microscopy have not been successful in that the specimen quality problems encountered with the CN solutions have also existed in the previously proposed non-cyanic methods.The technique we describe allows us to jet polish high quality silver and silver alloy microscope specimens with consistant reproducibility and without the use of CN salts.The solution is similar to that suggested by Myschoyaev et al. It consists, in order of mixing, 115ml glacial actic acid (CH3CO2H, specific wt 1.04 g/ml), 43ml sulphuric acid (H2SO4, specific wt. g/ml), 350 ml anhydrous methyl alcohol, and 77 g thiourea (NH2CSNH2).

A High Resolution Scanning Microscope

1968 ◽  
Vol 26 ◽  
pp. 356-357
Author(s):  
A. V. Crewe ◽  
J. Wall ◽  
L. M. Welter
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Spherical Aberration ◽  
Focal Length ◽  
Spot Size ◽  
Emission Source ◽  
Field Of View ◽  
Scanning Microscope ◽  
Magnetic Lens ◽  
High Quality

A scanning microscope using a field emission source has been described elsewhere. This microscope has now been improved by replacing the single magnetic lens with a high quality lens of the type described by Ruska. This lens has a focal length of 1 mm and a spherical aberration coefficient of 0.5 mm. The final spot size, and therefore the microscope resolution, is limited by the aberration of this lens to about 6 Å.The lens has been constructed very carefully, maintaining a tolerance of + 1 μ on all critical surfaces. The gun is prealigned on the lens to form a compact unit. The only mechanical adjustments are those which control the specimen and the tip positions. The microscope can be used in two modes. With the lens off and the gun focused on the specimen, the resolution is 250 Å over an undistorted field of view of 2 mm. With the lens on,the resolution is 20 Å or better over a field of view of 40 microns. The magnification can be accurately varied by attenuating the raster current.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Performance and applications of a field-emission gun TEM/STEM

1992 ◽  
Vol 50 (2) ◽  
pp. 942-943
Author(s):  
Judith M. Brock ◽  
Max T. Otten ◽  
Marc. J.C. de Jong
Keyword(s):  
Field Emission ◽  
High Resolution Imaging ◽  
High Quality ◽  
Small Energy ◽  
High Brightness ◽  
Small Probe ◽  
Resolution Imaging ◽  
Convergent Beam ◽  
Beam Patterns ◽  
Beam Diffraction

A Field Emission Gun (FEG) on a TEM/STEM instrument provides a major improvement in performance relative to one equipped with a LaB6 emitter. The improvement is particularly notable for small-probe techniques: EDX and EELS microanalysis, convergent beam diffraction and scanning. The high brightness of the FEG (108 to 109 A/cm2srad), compared with that of LaB6 (∼106), makes it possible to achieve high probe currents (∼1 nA) in probes of about 1 nm, whilst the currents for similar probes with LaB6 are about 100 to 500x lower. Accordingly the small, high-intensity FEG probes make it possible, e.g., to analyse precipitates and monolayer amounts of segregation on grain boundaries in metals or ceramics (Fig. 1); obtain high-quality convergent beam patterns from heavily dislocated materials; reliably detect 1 nm immuno-gold labels in biological specimens; and perform EDX mapping at nm-scale resolution even in difficult specimens like biological tissue.The high brightness and small energy spread of the FEG also bring an advantage in high-resolution imaging by significantly improving both spatial and temporal coherence.

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